A method includes providing a substrate having a surface such that a first hard mask layer is formed over the surface and a second hard mask layer is formed over the first hard mask layer, forming a first pattern in the second hard mask layer, where the first pattern includes a first mandrel oriented lengthwise in a first direction and a second mandrel oriented lengthwise in a second direction different from the first direction, and where the first mandrel has a top surface, a first sidewall, and a second sidewall opposite to the first sidewall, and depositing a material towards the first mandrel and the second mandrel such that a layer of the material is formed on the top surface and the first sidewall but not the second sidewall of the first mandrel.

A plasma processing apparatus comprising: a chamber; an upper electrode; a shower head having openings, an inner space of the chamber being divided into a first space and a second space; a shielding part including first and second shielding plates arranged in parallel between the upper electrode and the shower head, the shielding part having through-holes aligned with the openings; a gas supply device configured to supply a gas; a radio frequency (RF) power supply configured to output an RF voltage; a voltage applying part configured to select ions or radicals passing through the through-holes in the plasma by applying a control voltage to the shielding part; and a controller configured to control the voltage applying part by independently applying a control voltage to each of the first and second shield plates depending on control from the controller.

A method for forming a boron-doped silicon germanium film on a base film in a surface of an object to be processed includes: forming a seed layer by adsorbing a chlorine-free boron-containing gas to a surface of the base film; and forming a boron-doped silicon germanium film on the surface of the base film to which the seed layer is adsorbed by using a silicon raw material gas, a germanium raw material gas, and a boron doping gas through a chemical vapor deposition method.

A vacuum chamber having a vacuum chamber; at least one processing region arranged in the vacuum chamber; and a substrate holding arrangement for transporting and/or positioning a substrate or multiple substrates in the processing region, wherein the substrate holding arrangement has: a first drive train with a first substrate holder, the first substrate holder being configured to rotatably hold one or more substrates, a second drive train with a first support arm, wherein the first substrate holder is held rotatably by the first support arm, a third drive train with a second substrate holder, the second substrate holder being configured for rotatably holding one or more substrates, and a fourth drive train with a second support arm, wherein the second substrate holder is held rotatably by the second support arm, and wherein the first, second, third and fourth drive trains are each configured to be controllable independently of one another.

Disclosed is a substrate treating method for treating a substrate. The substrate treating method includes a dehydrating step, a dispensing step (mixed liquid dispensing step), a solidified film forming step, and a sublimation step. In the dehydrating step, a mixed liquid is dehydrated. The mixed liquid contains a sublimable substance and a solvent. In the dispensing step, the mixed liquid dehydrated in the dehydrating step is dispensed onto an upper surface of the substrate. In the solidified film forming step, the solvent evaporates from the mixed liquid on the upper surface of the substrate. In the solidified film forming step, a solidified film containing the sublimable substance is formed on the upper surface of the substrate. In the sublimation step, the solidified film sublimates.

Apparatus and methods for modifying a susceptor having a silicon carbide (SiC) surface. The method includes exposing the silicon carbide surface (SiC) to an atmospheric plasma. The method increases the atomic oxygen content of the silicon carbide (SiC) surface. The disclosure also describes a plasma treatment apparatus having a susceptor holding assembly and a plasma nozzle.

An apparatus for automated chemical vapor processing. The apparatus includes a chemical vapor processing chamber to treat articles with surface-smoothing chemical vapor and an article loading chamber to receive articles pending treatment by the chemical vapor processing chamber. The apparatus further includes an automated conveyor to move the articles between the article loading chamber and the chemical vapor processing chamber. The apparatus further includes an air lock to connect the article loading chamber to the chemical vapor processing chamber, and a controller to control the automated conveyor to move the articles between the article loading chamber and the chemical vapor processing chamber, and to control the air lock to seal the chemical vapor processing chamber from the article loading chamber when the automated conveyor is not moving articles between the article loading chamber and the chemical vapor processing chamber.

A fixture is provided. The fixture includes a base, a turntable, a first sensor, and a second sensor. The turntable is supported on the base, is rotatable about a rotation axis, and is configured to slidably seat a susceptor assembly for rotation about the rotation axis. The first sensor is fixed relative to the base, is radially offset from the rotation axis, and is configured to determine ex-situ runout of the susceptor assembly. The second sensor is fixed relative to the first sensor, is axially offset from the first sensor, and is configured to determine ex-situ wobble of the susceptor assembly. Fixture arrangements and methods of determining ex-situ runout and ex-situ wobble of susceptor assemblies for semiconductor processing systems are also described.

A fixture includes a frame, a leveling plate, a bracket, and a laser profiler. The frame is arranged for fixation above a reaction chamber arranged to deposit a film onto a substrate. The leveling plate is supported on the frame. The bracket is supported on the leveling plate. The laser profiler is suspended from the bracket, overlays the reaction chamber, and has a field of view that extends through the leveling plate and the frame to determine position of a target within the reaction chamber. Semiconductor processing systems and methods of determining position of targets within reaction chambers in semiconductor processing systems are also described.

Examples of a substrate processing device include an annular distribution ring, a plurality of connection plates continued to the distribution ring and having non-uniform impedances, a shower plate electrically connected to the plurality of connection plates, and a stage provided below the shower plate so as to face the shower plate.