A substrate etching apparatus for etching a substrate, the substrate etching apparatus includes a treatment container configured to accommodate a substrate, a stage on which the substrate is placed, the stage being disposed in the treatment container, a gas supply configured to supply a treatment gas from an upper space above the stage toward the stage, and a gas exhauster configured to evacuate an interior of the treatment container. The gas supply includes a central region facing a central part of the stage and an outer peripheral region having a same central axis as the central region and configured to surround the central region. The gas supply is capable of supplying the treatment gas to each of the central region and the outer peripheral region.

A member for a semiconductor manufacturing apparatus includes a ceramic disc incorporating an electrode and a ceramic cylindrical shaft supporting the disc. The disc and the shaft are integrally formed and mutually have no bonding interface. The disc has a surface with which the shaft is integrated. The surface has a region inside the shaft and a region outside the shaft. The region inside the shaft is recessed by one step with respect to the region outside the shaft and has an electrode exposure hole through which the electrode is exposed.

A gas supplying unit of a substrate treating apparatus is proposed. The gas supplying unit includes: a gas distribution plate having a first surface and a second surface opposite the first surface, and having first gas supply holes formed through the first surface and the second surface; a shower head having a third surface being in close contact with the second surface and a fourth surface opposite the third surface, and having second gas supply holes formed through the third surface and the fourth surface to be connected to the first gas supply holes; and heat transfer members having first ends inserted in at least one of the gas distribution plate and the shower head and second ends being in contact with any one of the shower head and the gas distribution plate.

There is provided a technique that includes a protective plate installed on a lid, including: a disc portion, of which a lower surface is in contact with an upper surface of the lid, a side wall portion extending from an outer peripheral end of the disc portion, a groove formed in the lower surface of the disc portion, and a stepped portion formed to be closer to the outer peripheral end of the disc portion than the groove, a clearance formed between the upper surface of the lid and the stepped portion, wherein the groove is configured to be able to form a flow of a gas that runs through a gap between the lid and the stepped portion, and is supplied to an outside of the side wall portion.

An apparatus and method for graphene film synthesis. The apparatus includes a quasi-enclosed substrate holder which includes one open side, a cap disposed over the one open side of the quasi enclosed substrate holder, and a substrate for graphene film synthesis located inside the quasi enclosed substrate holder. The method includes placing a substrate for graphene film synthesis inside of a quasi-enclosed substrate holder and generating a graphene film on the substrate via chemical vapor deposition, wherein the quasi enclosed substrate holder includes one open side and a cap disposed over the open side of the quasi enclosed substrate holder.

There is provided a technique that includes a protective plate installed on a lid, including: a disc portion, of which a lower surface is in contact with an upper surface of the lid, a side wall portion extending from an outer peripheral end of the disc portion, a groove formed in the lower surface of the disc portion, and a stepped portion formed to be closer to the outer peripheral end of the disc portion than the groove, a clearance formed between the upper surface of the lid and the stepped portion, wherein the groove is configured to be able to form a flow of a gas that runs through a gap between the lid and the stepped portion, and is supplied to an outside of the side wall portion.

A film forming apparatus includes a gas injection unit having a shower plate provided with gas injection holes, and a plurality of partition regions through which gases are separately injected and which are defined by dividing an arrangement region of the gas injection holes into a plurality of concentric regions in a diametrical direction of the substrate. A supply amount of a raw material gas per unit time in a raw material gas supply period in a cycle of forming a monomolecular layer by supplying the raw material gas and a reactant gas multiple times, and per unit area of the shower plate, and/or a supply amount of the reactant gas per unit time in a reaction period of the raw material gas and the reactant gas in the cycle, and per unit area of the shower plate becomes different in at least two of the partition regions.

Embodiments of the present disclosure provide a gas diffusion device and a film-forming apparatus. The gas diffusion device includes a cover plate, a first diffusion part and a second diffusion part. The first diffusion part cooperates with the cover plate to define a first diffusion space and a gas inlet that communicates with the first diffusion space. The second diffusion part cooperates with the cover plate to define a second diffusion space and a gas outlet that communicates with the second diffusion space. The second diffusion space communicates with the first diffusion space. In a direction from the gas inlet to the gas outlet, a gas between the first diffusion part and the cover plate decreases in height gradually, and a gap between the second diffusion part and the cover plate increases in height gradually at first and then decreases in height gradually.

A reactor system and related methods are provided which may include a heating element in a wafer tray. The heating element may be used to heat the wafer tray and a substrate or wafer seated on the wafer tray within a reaction chamber assembly, and may be used to cause sublimation of a native oxide of the wafer.

There is provided a technique includes: a substrate holder including a heat insulating part and a substrate holding part disposed above the heat insulating part and holding substrates in multiple stages; a process chamber processing the substrates held by the substrate holding part; a transfer chamber adjacent to the process chamber and transferring the substrates to the substrate holding part; a transfer mechanism transferring the substrate holder; a first gas supply part installed on one side of the transfer chamber and supplying gas into the transfer chamber; a second gas supply part having gas outlets at a height position between the substrate held at a lowermost stage of the substrate holding part and the heat insulating part and supplying a gas toward the substrate holder; and a controller controlling the transfer mechanism, the first gas supply part and the second gas supply part.