Examples of the present technology include semiconductor processing methods to form boron-containing materials on substrates. Exemplary processing methods may include delivering a deposition precursor that includes a boron-containing precursor to a processing region of a semiconductor processing chamber. A plasma may be formed from the deposition precursor within the processing region of the semiconductor processing chamber. The methods may further include depositing a boron-containing material on a substrate disposed within the processing region of the semiconductor processing chamber, where the substrate is characterized by a temperature of less than or about 50° C. The as-deposited boron-containing material may be characterized by a surface roughness of less than or about 2 nm, and a stress level of less-than or about −500 MPa. In some embodiments, a layer of the boron-containing material may function as a hardmask.

Examples of the present technology include semiconductor processing methods that provide a substrate in a substrate processing region of a substrate processing chamber, where the substrate is maintained at a temperature less than or about 50° C. An inert precursor and a hydrocarbon-containing precursor may be flowed into the substrate processing region of the substrate processing chamber, where a flow rate ratio of the inert precursor to the hydrocarbon-containing precursor may be greater than or about 10:1. A plasma may be generated from the inert precursor and the hydrocarbon-containing precursor, and a carbon-containing material may be deposited from the plasma on the substrate. The carbon-containing material may include diamond-like-carbon, and may have greater than or about 60% of the carbon atoms with sp.sup.3 hybridized bonds.

Examples of the present technology include semiconductor processing methods to form boron-containing materials on substrates. Exemplary processing methods may include delivering a deposition precursor that includes a boron-containing precursor to a processing region of a semiconductor processing chamber. A plasma may be formed from the deposition precursor within the processing region of the semiconductor processing chamber. The methods may further include depositing a boron-containing material on a substrate disposed within the processing region of the semiconductor processing chamber, where the substrate is characterized by a temperature of less than or about 50° C. The as-deposited boron-containing material may be characterized by a surface roughness of less than or about 2 nm, and a stress level of less-than or about −500 MPa. In some embodiments, a layer of the boron-containing material may function as a hardmask.

A method of fabricating a wafer according to the embodiment comprises the steps of growing an wafer on a surface of the wafer in a growth temperature; and cooling the wafer after the wafer has been grown, wherein a stepwise cooling is performed when cooling the wafer.

Embodiments described herein generally relate to apparatus for processing substrates. The apparatus generally include a process chamber having a substrate support therein. A plurality of lamps are positioned to provide radiant energy through an optically transparent window to a substrate positioned on the substrate support. The plurality of lamps are positioned in a lamp housing. A cooling channel is formed in the lamp housing. A surface of the lamp housing is spaced a distance from the optically transparent window to form a gap therebetween. The gap functions as a fluid channel and is adapted to contain a fluid therein to facilitate cooling of the optically transparent window. Turbulence inducing features, such as openings, formed in the surface of the lamp housing induce a turbulent flow of the cooling fluid, thus improving heat transfer between the optically transparent window and the lamp housing.

A chemical vapor deposition process includes: performing a first-vapor deposition process to maintain a first temperature for a first time period; and performing a second-vapor deposition process, which includes: a temperature rising step, which makes the first temperature rise to a second temperature within a second time period; and a temperature dropping step, which makes the second temperature drop to a third temperature within a third time period.

The disclosed materials, methods, and apparatus, provide novel ultra-high temperature materials (UHTM) in fibrous forms/structures; such “fibrous materials” can take various forms, such as individual filaments, short-shaped fiber, tows, ropes, wools, textiles, lattices, nano/microstructures, mesostructured materials, and sponge-like materials. At least four important classes of UHTM materials are disclosed in this invention: (1) carbon, doped-carbon and carbon alloy materials, (2) materials within the boron-carbon-nitride-X system, (3) materials within the silicon-carbon-nitride-X system, and (4) highly-refractory materials within the tantalum-hafnium-carbon-nitride-X and tantalum-hafnium-carbon-boron-nitride-X system. All of these material classes offer compounds/mixtures that melt or sublime at temperatures above 1800° C.—and in some cases are among the highest melting point materials known (exceeding 3000° C.). In many embodiments, the synthesis/fabrication is from gaseous, solid, semi-solid, liquid, critical, and supercritical precursor mixtures using one or more low molar mass precursor(s), in combination with one or more high molar mass precursor(s). Methods for controlling the growth, composition, and structures of UHTM materials through control of the thermal diffusion region are disclosed.

A heating apparatus including a side wall heat insulator configured to provide an inner space for receiving a reaction tube, an upper wall heat insulator covering a top portion of the side wall heat insulator, a heat generation part in an inner surface of the side wall heat insulator, and a heat compensating part on a lower surface of the upper wall heat insulator, the heat compensating part including a reflection surface in a first region on the lower surface of the upper wall heat insulator, the first region having a first emissivity less than an emissivity of the upper wall heat insulator may be provided.

An etching chamber is equipped with an actively-cooled element preferentially adsorbs volatile compounds that are evolved from a polymeric layer of a wafer during etching, which compounds will act as contaminants if re-deposited on the wafer, for example on exposed metal contact portions where they may interfere with subsequent deposition of metal contact layers. In desirable embodiments, a getter sublimation pump is also provided in the etching chamber as a source of getter material. Methods of etching in such a chamber are also disclosed.

Electronic device fabrication processes, apparatuses and systems for flowable gap fill or flowable deposition techniques are described. In some implementations, a semiconductor fabrication chamber is described which is configured to maintain a semiconductor wafer at a temperature near 0° C. while maintaining most other components within the fabrication chamber at temperatures on the order of 5-10° C. or higher than the wafer temperature.