An exemplary method of depositing a layer of a material on an interior substrate surface of a complex geometry component includes the steps of providing the complex geometry component having an aperture defining an edge of the interior substrate surface of the complex geometry component, at least a portion of the interior substrate surface defining a first area not visible from the aperture, providing a heating element adjacent to the first area of the complex geometry component, energizing the heating element to raise a surface temperature of the first area and establish a thermal gradient between the first area and an adjacent area, and providing a vapor deposition apparatus configured to deposit the layer of material on the interior substrate surface corresponding to the first area of the complex geometry component.

Described herein is a technique capable of improving a film uniformity on a surface of a substrate and a film uniformity among a plurality of substrates including the substrate. According to one aspect thereof, there is provided a substrate processing apparatus including: a substrate retainer including: a product wafer support region, an upper dummy wafer support region and a lower dummy wafer support region; a process chamber in which the substrate retainer is accommodated; a first, a second and a third gas supplier; and an exhaust system. Each of the first gas and the third gas supplier includes a vertically extending nozzle with holes, wherein an upper of an uppermost hole and a lower end of a lowermost hole are arranged corresponding to an uppermost and a lowermost dummy wafer, respectively. The second gas supplier includes a nozzle with holes or a slit.

Disclosed are apparatuses and methods for providing a substrate onto a substrate support in a processing chamber, generating an inert plasma in the processing chamber, and maintaining the inert plasma to heat the substrate to a steady state temperature, suitable for conducting plasma-enhanced chemical vapor deposition (PECVD), in less than 30 seconds from providing the substrate onto the substrate support. An apparatus may include a processing chamber, a process station that includes a substrate support, a process gas unit configured to flow an inert gas onto a substrate supported by the substrate support, a plasma source configured to generate an inert plasma in the process station, and a controller with instructions configured to flow the inert gas onto the substrate, generate the inert plasma in the first process station, and maintain the inert plasma to thereby heat the substrate.

Described herein is a technique capable of suppressing adhesion of by-products to a furnace opening portion. A substrate processing apparatus includes: a reaction vessel having an opening at a lower end and accommodating a substrate retainer; a shaft rotatably supporting the substrate retainer; a cap including: a side surface portion having a predetermined gap with an inner surface of the reaction vessel; a cylindrical portion through which the shaft is inserted; an upper plate portion of an annular shape; and a flange connected to a lower end of the side surface portion; and a cap cover connected to the shaft above the upper end of the cylindrical portion. A purge gas from thereunder flows sequentially to a space between the shaft and the cylindrical portion, a space between the upper plate portion and the cap cover and a space between the side surface portion and the cap cover.

Embodiments described herein generally relate to apparatus for fabricating semiconductor devices. A gas injection apparatus is coupled to a first gas source and a second gas source. Gases from the first gas source and second gas source may remain separated until the gases enter a process volume in a process chamber. A coolant is flowed through a channel in the gas injection apparatus to cool the first gas and the second gas in the gas injection apparatus. The coolant functions to prevent thermal decomposition of the gases by mitigating the influence of thermal radiation from the process chamber. In one embodiment, the channel surrounds a first conduit with the first gas and a second conduit with the second gas.

Embodiments described herein generally relate to apparatus for fabricating semiconductor devices. A gas injection apparatus is coupled to a first gas source and a second gas source. Gases from the first gas source and second gas source may remain separated until the gases enter a process volume in a process chamber. A coolant is flowed through a channel in the gas injection apparatus to cool the first gas and the second gas in the gas injection apparatus. The coolant functions to prevent thermal decomposition of the gases by mitigating the influence of thermal radiation from the process chamber. In one embodiment, the channel surrounds a first conduit with the first gas and a second conduit with the second gas.

A process for depositing a coating on a continuous fibre of carbon or silicon carbide from a precursor of the coating, includes heating a segment of the fibre in the presence of the coating precursor in a microwave field so as to bring the surface of the segment to a temperature allowing the coating to form on the segment from the coating precursor, wherein the segment of fibre is in the presence of a supercritical phase of the precursor of the coating in the reactor and the coating is formed by supercritical phase chemical deposition in the reactor.

Chamber components for an epitaxial growth apparatus are disclosed. A reaction chamber defined and formed by a ceiling plate. A reactant gas is rectified in a reactant gas supply path disposed in the side wall, so that a horizontal component in a flow direction of the reactant gas in the reaction chamber corresponds to a horizontal component in a direction extending from the center of an opening of the reactant gas supply path. Improvements to the upper side wall, susceptor and rectification plate of the epitaxial growth apparatus have resulted in improvements to the uniformity and formation speed of the epitaxial layer formed on substrates resulting in higher throughput and lower defects.

Embodiments of the disclosure relate to apparatus and method for a tunable plasma process within a plasma processing chamber. In one embodiment of the disclosure, a heater assembly for a plasma processing chamber is disclosed. The heater assembly includes a resistive heating element, a first lead coupling the resistive heating element to an RF filter and a tunable circuit element operable to adjust an impedance between the resistive heating element and the RF filter. Another embodiment provides a method for controlling a plasma process in a plasma processing chamber by forming a plasma from a process gas present inside the plasma processing chamber and adjusting an impedance between a resistive heating element and an RF filter coupled between the resistive heating element and a power source for the resistive heating element, while the plasma is present in the plasma processing chamber.

A process for depositing a coating on a continuous carbon or silicon carbide fibre from a coating precursor, includes at least heating a segment of the fibre in the presence of the coating precursor in a microwave field so as to bring the surface of the segment to a temperature enabling the coating to be formed on the segment from the coating precursor.