The invention includes apparatus and methods for instantiating and quantum printing materials, such as elemental metals, in a nanoporous carbon powder.

Systems and methods for performing a rapid hybrid chemical vapor deposition are described herein. In an embodiment, first type of precursor materials is deposited on a substrate. The substrate is placed in a receptacle of a heating device, the heating device configured to provide heat to at least a portion of the receptacle. A second type of precursor materials is placed in the receptacle of the heating device such that the organic compound is closer to a gas source of the heating device than the substrate. A gas flow is created through the receptacle of the heating device. The heating component is used to cause of a portion of the receptacle comprising the substrate and the second type of precursor materials. During the heating process, at least a portion of the second type of precursor materials is deposited on at least a portion of the first type of precursor materials on the substrate.

An apparatus and method of processing a workpiece is disclosed, where a coating is applied to a workpiece and the workpiece is subsequently subjected to an etching process. These processes are performed by one semiconductor processing apparatus while the workpiece is scanned relative to the apparatus. A precursor is applied to the workpiece by the apparatus. The apparatus then uses plasma, heat or ultraviolet radiation to activate the precursor to form a coating. After the coating is applied, the apparatus is configured to perform the etching process. In certain embodiments, the etching process is a directional etching process.

A film formation method includes: adsorbing a precursor of a film-forming raw material gas onto a surface of a substrate on which a film is to be formed by irradiating an interior of a processing container with ultraviolet light which has a first wavelength and separates a predetermined bond of the raw material gas while supplying the raw material gas into the processing container in which the substrate is disposed; and forming a layer, in which the precursor and a reaction gas react on the surface of the substrate, by supplying the reaction gas into the processing container.

A combustion-supporting gas line, a flammable gas line, and an inert gas line are connected to a chamber performing a heat treatment on a semiconductor wafer. Nitrogen is sent from the inert gas line to the combustion-supporting gas line before supplying flammable gas into the chamber to replace gas in the combustion-supporting gas line with nitrogen. Nitrogen is sent from the inert gas line to the flammable gas line before supplying combustion-supporting gas into the chamber to replace gas in the flammable gas line with nitrogen. Common one inert gas line is provided in the combustion-supporting gas line and the flammable gas line, thus a space for arranging components relating to gas supply can be reduced.

Embodiments of the present disclosure generally relate to semiconductor processing, and specifically to methods and apparatus for surface modification of substrates. In an embodiment, a substrate modification method is provided. The method includes positioning a substrate within a processing chamber; and depositing a material on a portion of the substrate by a deposition process, wherein the deposition process comprises: thermally heating the substrate to a temperature of less than about 500° C.; delivering a first electromagnetic energy from an electromagnetic energy source to the substrate to modify a first region of the substrate, the first region of the substrate being at or near an upper surface of the substrate; and depositing a first material on the first region while delivering the first electromagnetic energy.

The invention includes apparatus and methods for instantiating and quantum printing materials, such as elemental metals, in a nanoporous carbon powder.

Inside a heating space of a heating chamber, a first heating treatment of moving a substrate along a substrate moving direction is performed by a first conveyor. After that, first conveyance processing of moving the substrate along a conveying direction is performed by a second conveyor. At this time, source mist is sprayed on the substrate by first thin film forming nozzles. Subsequently, second heating treatment is performed by a third conveyor. After that, second conveyance processing is performed by a fourth conveyor. At this time, source mist is sprayed on the substrate by second thin film forming nozzles.

A laser processing machine includes a guide member with which a laser head is engaged so as to be movable to one side in a conveying direction, a moving device configured to move the laser head along the guide member, a counterweight which is movably engaged to the other side of the guide member in the conveying direction and moves along the guide member in a direction opposite to a moving direction of the laser head in conjunction with the laser head moved by the moving device, and a control device which controls the moving device to move the counterweight to a position facing the grease feeding device and to perform grease feeding to an engaged portion between the counterweight and the guide member.

A dry powder MOCVD vapor source system is disclosed that utilizes a gravimetric powder feeder, a feed rate measurement and feeder control system, an evaporator and a load lock system for continuous operation for thin film production, particularly of REBCO type high temperature superconductor (HTS) tapes.