C23C16/483

METHOD FOR PRODUCING THREE-DIMENSIONAL SILICON CARBIDE-CONTAINING OBJECTS
20220118551 · 2022-04-21 ·

Subject-matter of the invention is a method of applying silicon carbide-containing materials to a substrate surface, and an apparatus for carrying out the method.

Cobalt precursors

Cobalt precursors are described, having application for vapor deposition of cobalt on substrates, such as in atomic layer deposition (ALD) and chemical vapor deposition (CVD) processes for forming interconnects, capping structures, and bulk cobalt conductors, in the manufacture of integrated circuitry and thin film products.

Composite tape with LCVD-formed additive material in constituent layer(s)

A composite tape and method of fabrication are provided which includes multiple layers and a laser-driven chemical vapor deposition (LCVD)-formed additive material in at least one layer of the multiple layers to enhance one or more properties of the composite tape. The LCVD-formed additive material is a single crystalline material and can include LCVD-formed granular material and/or LCVD-formed fiber material in the same or different layers of the composite tape to enhance, for instance, fracture strength and/or wear resistance of the composite tape.

FORMING METHOD OF COMPONENT AND SUBSTRATE PROCESSING SYSTEM
20210366697 · 2021-11-25 ·

A forming method of a component used in a plasma processing apparatus includes irradiating an energy beam to a source material of the component while supplying the source material based on a surface state of the component.

Substrate processing apparatus and method

The invention relates to a substrate processing apparatus comprising a reaction chamber provided with a substrate rack for holding a plurality of substrates in the reaction chamber. The substrate rack may have a plurality of spaced apart substrate holding provisions configured to hold the plurality of substrates. The apparatus may have an illumination system constructed and arranged to irradiate radiation with a range from 100 to 500 nanometers onto a top surface of the substrates.

LASER-ASSISTED METAL-ORGANIC CHEMICAL VAPOR DEPOSITION DEVICES AND METHODS OF USE THEREOF
20210355581 · 2021-11-18 ·

Disclosed herein are laser-assisted metal-organic chemical vapor deposition devices and methods of use thereof.

Method of making a multi-composition fiber

A method of making a multi-composition fiber is provided, which includes providing a precursor laden environment, and forming a fiber in the precursor laden environment using laser heating. The precursor laden environment includes a primary precursor material and an elemental precursor material. The formed fiber includes a primary fiber material and an elemental additive material, where the elemental additive material has too large an atom size to fit within a single crystalline domain within a crystalline structure of the fiber, and is deposited on grain boundaries between adjacent crystalline domains of the primary fiber material to present an energy barrier to atomic diffusion through the grain boundaries, and to increase creep resistance by slowing down growth between the adjacent crystalline domains of the primary fiber material.

CVD REACTOR WITH TEMPERATURE-CONTROLLABLE GAS INLET REGION
20230332292 · 2023-10-19 ·

A CVD reactor includes a reactor housing, a susceptor that forms a floor of a process chamber, a gas inlet member with at least one gas inlet region, a heating device arranged under the susceptor for producing a difference in temperature between the main body of the susceptor and a ceiling of the process chamber, substrate carriers located at a distance from the gas inlet member in a direction of flow, and flow zone plates arranged between the gas inlet member and each of the substrate carriers. For each flow zone plate, a flow zone temperature of a surface of the flow zone plate which faces the process chamber can be set by respectively selecting or setting a heat transfer medium. For individually controlling each of the flow zone temperatures, the flow zone plates can be exchanged with other flow zone plates with different flow transfer properties.

MANUFACTURING METHOD OF ELECTRODE FOR ELECTROCHEMICAL REACTION, ELECTRODE FOR ELECTROCHEMICAL REACTION MANUFACTURED THEREFROM AND REVERSE ELECTRODIALYSIS ELECTRIC GENERATING DEVICE

Provided is a manufacturing method of an electrode for an electrochemical reaction, which is capable of minimizing a loss of a metal precursor and simultaneously reducing a manufacturing time. An embodiment of the present invention provides a manufacturing method of an electrode for an electrochemical reaction, which includes a process of forming a metal thin-film on a substrate disposed in a reactor and in which the metal thin-film is formed as a metal precursor gas derived from a metal precursor is thermally decomposed by a CO.sub.2-laser.

QUANTUM PRINTING METHODS
20230279542 · 2023-09-07 ·

The invention includes apparatus and methods for instantiating and quantum printing materials, such as elemental metals, in a nanoporous carbon powder.