To improve the single crystallinity of a stacked film in which a ZrO.sub.2 film and a Y.sub.2O.sub.3 film are stacked or a YSZ film. A crystal film includes a Zr film and a stacked film in which a ZrO.sub.2 film and a Y.sub.2O.sub.3 film formed on the Zr film are stacked, and has a peak half-value width when the stacked film is evaluated by X-ray diffraction being 0.05 to 2.0.

Methods, devices and systems for patterning of substrates using charged particle beams without photomasks and without a resist layer. Material can be removed from a substrate, as directed by a design layout database, localized to positions targeted by multiple, matched charged particle beams. Reducing the number of process steps, and eliminating lithography steps, in localized material removal has the dual benefit of reducing manufacturing cycle time and increasing yield by lowering the probability of defect introduction. Furthermore, highly localized, precision material removal allows for controlled variation of removal rate and enables creation of 3D structures or profiles. Local gas injectors and detectors, and local photon injectors and detectors, are local to corresponding ones of the columns, and can be used to facilitate rapid, accurate, targeted substrate processing.

The invention provides a method for providing an Au-containing layer onto a surface of a work piece, which method comprises: providing 510 a deposition fluid comprising Au(CO)Cl; depositing 520 the fluid on at least part of the surface of the work piece; and directing 530 a charged particle beam toward the surface of the work piece onto which at least part of the fluid is deposited to decompose Au(CO)Cl thereby forming the Au-containing layer on the surface of the work piece. By using Au(CO)Cl as a precursor for charged particle induced deposition, a gold Au layer may be deposited with a very high purity compared to methods known in the art.

Methods and systems for direct lithographic pattern definition based upon electron beam induced alteration of the surface chemistry of a substrate are described. The methods involve an initial chemical treatment for global definition of a specified surface chemistry (SC). Electron beam induced surface reactions between a gaseous precursor and the surface are then used to locally alter the SC. High resolution patterning of stable, specified surface chemistries upon a substrate can thus be achieved. The defined patterns can then be utilized for selective material deposition via methods which exploit the specificity of certain SC combinations or by differences in surface energy. It is possible to perform all steps in-situ without breaking vacuum.

A microfluidic structure comprising a thermoplastic portion defining a microfluidic recess, a bonding layer on the thermoplastic portion and a siloxane elastomer portion covalently bonded to the bonding layer to seal the microfluidic recess. The microfluidic recess can therefore be formed simply, quickly and cheaply using known injection molding techniques, which are not hampered by the need for a curing step. However, the positive qualities associated with elastomers can be brought to the structure by using this to seal the microchannels. The bonding layer can be formed by silica deposited on the thermoplastic portion using techniques known in the field of optics.

Apparatus for nanofabrication on an unconventional substrate including a patterned pliable membrane mechanically coupled to a membrane support structure, a substrate support structure to receive a substrate for processing, and an actuator to adjust the distance between the pliable membrane and the substrate. Nanofabrication on conventional and unconventional substrates can be achieved by transferring a pre-formed patterned pliable membrane onto the substrate using a transfer probe or non-stick sheet, followed by irradiating the substrate through the patterned pliable membrane so as to transfer the pattern on the pliable membrane into or out of the substrate. The apparatus and methods allow fabrication of diamond photonic crystals, fiber-integrated photonic devices and Nitrogen Vacancy (NV) centers in diamonds.

A method includes placing a first charged metal dot on a first position of a surface of a semiconductor substrate. A first charged region is formed on a second position of the surface of the semiconductor substrate. A precursor gas is flowed along a first direction from the first position toward the second position on the semiconductor substrate, thereby forming a first carbon nanotube (CNT) on the semiconductor substrate. A dielectric layer is deposited to cover the first CNT and the semiconductor substrate. A second charged metal dot is placed on a third position of a surface of the dielectric layer. A second charged region is formed on a fourth position of the surface of the dielectric layer. The precursor gas is flowed along a second direction from the third position toward the fourth position on the semiconductor substrate, thereby forming a second CNT on the first CNT.

Methods, devices and systems for patterning of substrates using charged particle beams without photomasks and without a resist layer. Material can be deposited onto a substrate, as directed by a design layout database, localized to positions targeted by multiple, matched charged particle beam columns. Reducing the number of process steps, and eliminating lithography steps, in localized material addition has the dual benefit of reducing manufacturing cycle time and increasing yield by lowering the probability of defect introduction. Furthermore, highly localized, precision material deposition allows for controlled variation of deposition rate and enables creation of 3D structures. Local gas injectors and detectors, and local photon injectors and detectors, are local to corresponding ones of the columns, and can be used to facilitate rapid, accurate, targeted, highly configurable substrate processing, advantageously using large arrays of said beam columns.

A method for repairing a lithography mask is provided. The method includes receiving a lithography mask having a capping layer that includes a damaged region, identifying a location and a dimension of the damaged region of the capping layer, determining a repairing time duration based on the dimension of the damaged region of the capping layer, and forming a capping patch layer in the damaged region of the capping layer.

Methods and apparatus for forming a patterned layer of material are disclosed. In one arrangement, a deposition-process material is provided in gaseous form. A layer of the deposition-process material is formed on the substrate by causing condensation or deposition of the gaseous deposition-process material. A selected portion of the layer of deposition-process material is irradiated to modify the deposition-process material in the selected portion.