C23C16/503

Monopole antenna array source for semiconductor process equipment

A plasma reactor includes a chamber body having an interior space that provides a plasma chamber, a gas distribution port to deliver a processing gas to the plasma chamber, a workpiece support to hold a workpiece, an antenna array comprising a plurality of monopole antennas extending partially into the plasma chamber, and an AC power source to supply a first AC power to the plurality of monopole antennas.

ELECTRIC DISCHARGE GENERATOR AND POWER SUPPLY DEVICE OF ELECTRIC DISCHARGE GENERATOR

An electric discharge generator and power supply device of electric discharge generator includes a radical gas generation apparatus, a process chamber apparatus, and an n-phase inverter power supply device. The radical gas generation apparatus is located adjacent to the process chamber apparatus. The radical gas generation apparatus includes a plurality of (n) discharge cells. The n-phase inverter power supply device includes a power supply circuit configuration offering a means to control output of n-phase alternating current voltages and variably controls, according to positions of the plurality of discharge cells, the alternating current voltages of different phases.

ELECTRIC DISCHARGE GENERATOR AND POWER SUPPLY DEVICE OF ELECTRIC DISCHARGE GENERATOR

An electric discharge generator and power supply device of electric discharge generator includes a radical gas generation apparatus, a process chamber apparatus, and an n-phase inverter power supply device. The radical gas generation apparatus is located adjacent to the process chamber apparatus. The radical gas generation apparatus includes a plurality of (n) discharge cells. The n-phase inverter power supply device includes a power supply circuit configuration offering a means to control output of n-phase alternating current voltages and variably controls, according to positions of the plurality of discharge cells, the alternating current voltages of different phases.

Electrode plate for plasma etching and plasma etching apparatus

An electrode plate for a plasma etching is formed as a disc shape having a predetermined thickness, a plurality of gas holes penetrating a surface of the electrode plate perpendicularly to the surface are provided on different circumferences of a plurality of concentric circles, the electrode plate is divided in a radial direction of the electrode plate into two or more regions, types of gas holes provided in the two or more regions are different from each other by region.

Apparatus, device and process for coating of articles

An apparatus for coating at least a first plurality of articles each article thereof having at least a first surface to be coated is disclosed. The apparatus includes an emission source for directing emission elements towards the first surfaces of the plurality of articles, at least one support member for supporting the first plurality of articles, wherein support member supports the first plurality of articles such that the first surface is exposed to the path of emission from said emission source, and a drive assembly for moving the support member such that the first plurality of articles is moveable with respect to the path of emission from said emission source.

Apparatus, device and process for coating of articles

An apparatus for coating at least a first plurality of articles each article thereof having at least a first surface to be coated is disclosed. The apparatus includes an emission source for directing emission elements towards the first surfaces of the plurality of articles, at least one support member for supporting the first plurality of articles, wherein support member supports the first plurality of articles such that the first surface is exposed to the path of emission from said emission source, and a drive assembly for moving the support member such that the first plurality of articles is moveable with respect to the path of emission from said emission source.

Plasma device

The plasma device includes a vessel with the first and second molds facing to each other. A work is sealed in the closed first and second molds. The work includes an object to be processed with a part to be processed and a part not to be processed on an outer periphery of the part to be processed, and a masking member covering the part not to be processed. The first mold includes a facing plane portion disposed facing an outer periphery surface of the work, a first recessed portion disposed facing the part to be processed and generating plasma, and a second recessed portion disposed facing the part not to be processed between the facing plane portion and the first recessed portion and generating plasma. A depth of the second recessed portion is different from a depth of the first recessed portion.

Plasma device

The plasma device includes a vessel with the first and second molds facing to each other. A work is sealed in the closed first and second molds. The work includes an object to be processed with a part to be processed and a part not to be processed on an outer periphery of the part to be processed, and a masking member covering the part not to be processed. The first mold includes a facing plane portion disposed facing an outer periphery surface of the work, a first recessed portion disposed facing the part to be processed and generating plasma, and a second recessed portion disposed facing the part not to be processed between the facing plane portion and the first recessed portion and generating plasma. A depth of the second recessed portion is different from a depth of the first recessed portion.

COATINGS FORMED FROM THE DEPOSITION OF PLASMA-ACTIVATED ADDUCTS
20170321326 · 2017-11-09 ·

A fluoro-organosiloxane composition, coating and process for depositing the coating. Substituted tetramethylenedisiloxane precursor at a flow rate (Q.sub.sTMDSO) and perfluorinated propylene oxide precursor at a flow rate (Q.sub.PFPO) are introduced into a process chamber at a flow rate ratio (Q.sub.sTMDSO/Q.sub.PFPO) in the range of 0.1 to 2.0 (g/(hr.Math.sccm)). A pulsed DC voltage is applied to a substrate and a fluoro-organosiloxane coating is deposited on the substrate, wherein the coating exhibits a water contact angle in oil (WCA/O) of greater than 155°.

COATINGS FORMED FROM THE DEPOSITION OF PLASMA-ACTIVATED ADDUCTS
20170321326 · 2017-11-09 ·

A fluoro-organosiloxane composition, coating and process for depositing the coating. Substituted tetramethylenedisiloxane precursor at a flow rate (Q.sub.sTMDSO) and perfluorinated propylene oxide precursor at a flow rate (Q.sub.PFPO) are introduced into a process chamber at a flow rate ratio (Q.sub.sTMDSO/Q.sub.PFPO) in the range of 0.1 to 2.0 (g/(hr.Math.sccm)). A pulsed DC voltage is applied to a substrate and a fluoro-organosiloxane coating is deposited on the substrate, wherein the coating exhibits a water contact angle in oil (WCA/O) of greater than 155°.