The present disclosure relates to anti-fog coatings, coated substrate comprising an anti-fog coating and a process for preparing such coatings. Said process comprising exposing a surface to be coated in a plasma, said plasma produced by exposing a carrier gas comprising an oxidant (e.g. N.sub.2/O.sub.2, N.sub.2/N.sub.2O, or air) and a alkylcyclosiloxane (e.g. tetramethylcyclotetrasiloxane) under dielectric barrier discharge (DBD) in Townsend's mode at atmospheric pressure.

The present disclosure relates to anti-fog coatings, coated substrate comprising an anti-fog coating and a process for preparing such coatings. Said process comprising exposing a surface to be coated in a plasma, said plasma produced by exposing a carrier gas comprising an oxidant (e.g. N.sub.2/O.sub.2, N.sub.2/N.sub.2O, or air) and a alkylcyclosiloxane (e.g. tetramethylcyclotetrasiloxane) under dielectric barrier discharge (DBD) in Townsend's mode at atmospheric pressure.

The present disclosure is a wafer support, which includes a heating unit, an insulating-and-heat-conducting unit and a conduct portion, wherein the insulating-and-heat-conducting unit is positioned between the conduct portion and the heating unit. During a deposition process, an AC bias is formed on the conduct portion to attract a plasma disposed thereabove. The heating unit includes at least one heating coil, wherein the heating coil heats the wafer supported by the wafer support via the insulating-and-heat-conducting unit and the conduct portion. The insulating-and-heat-conducting unit electrically insulates the heating unit and the conduct portion to prevent the AC flowing in the heating coil and the AC bias on the conduct portion from conducting each other, so the wafer support can generate a stable AC bias and temperature to facilitate forming an evenly-distributed thin film on the wafer supported by the wafer support.

The present disclosure is a wafer support, which includes a heating unit, an insulating-and-heat-conducting unit and a conduct portion, wherein the insulating-and-heat-conducting unit is positioned between the conduct portion and the heating unit. During a deposition process, an AC bias is formed on the conduct portion to attract a plasma disposed thereabove. The heating unit includes at least one heating coil, wherein the heating coil heats the wafer supported by the wafer support via the insulating-and-heat-conducting unit and the conduct portion. The insulating-and-heat-conducting unit electrically insulates the heating unit and the conduct portion to prevent the AC flowing in the heating coil and the AC bias on the conduct portion from conducting each other, so the wafer support can generate a stable AC bias and temperature to facilitate forming an evenly-distributed thin film on the wafer supported by the wafer support.

Exemplary semiconductor substrate supports may include a pedestal having a shaft and a platen. The semiconductor substrate supports may include a cover plate. The cover plate may be coupled with the platen along a first surface of the cover plate. The cover plate may define a recessed channel in a second surface of the cover plate opposite the first surface. The semiconductor substrate supports may include a puck coupled with the second surface of the cover plate. The puck may incorporate an electrode. The puck may define a plurality of apertures extending vertically through the puck to fluidly access the recessed channel defined in the cover plate.

An electrochemical probe for in-vivo measurement of H.sub.2O.sub.2 oxidation within a living tissue. The electrochemical probe includes a sensing part and a handle. The sensing part includes a working electrode including a first biocompatible conductive needle, a counter electrode including a second biocompatible conductive needle, and a reference electrode including a third biocompatible conductive needle. The working electrode, the counter electrode, and the reference electrode are configured to be put in contact with the living tissue by inserting the sensing part into the living tissue. The handle includes an insertion part that may be configured to insert the sensing part into the living tissue. The sensing part is attached to the insertion part.

A substrate processing apparatus includes a reaction chamber including an inlet through which a reaction gas is supplied and an outlet through which residue gas is exhausted; a plurality of ionizers located at a front end of the inlet and configured to ionize the reaction gas supplied through the inlet; and a heater configured to heat the reaction chamber. The plurality of ionizers include a first ionizer configured to ionize the reaction gas positively; and a second ionizer configured to ionize the reaction gas negatively.

A substrate processing apparatus includes a reaction chamber including an inlet through which a reaction gas is supplied and an outlet through which residue gas is exhausted; a plurality of ionizers located at a front end of the inlet and configured to ionize the reaction gas supplied through the inlet; and a heater configured to heat the reaction chamber. The plurality of ionizers include a first ionizer configured to ionize the reaction gas positively; and a second ionizer configured to ionize the reaction gas negatively.

The invention relates to the improvement of synthesis by chemical vapour deposition, particularly diamond synthesis. It is proposed to reduce the time required for the deposition of diamond layers by compressing the plasma near the deposition substrate in order to increase the chances of collision between active species.

The invention relates to the improvement of synthesis by chemical vapour deposition, particularly diamond synthesis. It is proposed to reduce the time required for the deposition of diamond layers by compressing the plasma near the deposition substrate in order to increase the chances of collision between active species.