A method of forming nanocrystalline graphene according to an embodiment may include: arranging a substrate having a pattern in a reaction chamber; injecting a reaction gas into the reaction chamber, where the reaction gas includes a carbon source gas, an inert gas, and a hydrogen gas that are mixed; generating a plasma of the reaction gas in the reaction chamber; and directly growing the nanocrystalline graphene on a surface of the pattern using the plasma of the reaction gas at a process temperature. The pattern may include a first material and the substrate may include a second material different from the first material.

A method of forming nanocrystalline graphene according to an embodiment may include: arranging a substrate having a pattern in a reaction chamber; injecting a reaction gas into the reaction chamber, where the reaction gas includes a carbon source gas, an inert gas, and a hydrogen gas that are mixed; generating a plasma of the reaction gas in the reaction chamber; and directly growing the nanocrystalline graphene on a surface of the pattern using the plasma of the reaction gas at a process temperature. The pattern may include a first material and the substrate may include a second material different from the first material.

A method of forming graphene layers is disclosed. The method includes precleaning the substrate with a plasma formed from an argon- and hydrogen-containing gas, followed by forming a graphene layer by exposing the substrate to a microwave plasma to form a graphene layer on the substrate. The microwave plasma comprises hydrocarbon and hydrogen radicals. The substrate is then cooled. A capping layer may also be formed.

A method of forming graphene layers is disclosed. The method includes precleaning the substrate with a plasma formed from an argon- and hydrogen-containing gas, followed by forming a graphene layer by exposing the substrate to a microwave plasma to form a graphene layer on the substrate. The microwave plasma comprises hydrocarbon and hydrogen radicals. The substrate is then cooled. A capping layer may also be formed.

An artificial diamond plasma production device has a reaction chamber, a microwave emitting module, and a microwave lens. The microwave emitting module emits a circularly-polarized microwave into the reaction chamber. The microwave emitting module has a polarizing tube, a directing tube, a first waveguide, and a first linearly-polarized microwave source serially connected along a microwave traveling path. The microwave emitting module further has a second waveguide and a first matched load. The polarizing tube is configured to convert a linearly-polarized microwave into a circularly-polarized microwave or the other way round depending on traveling direction of the microwave. The directing tube has a first opening and a second opening which face toward different directions. The first waveguide is connected to the first opening. The first matched load is connected to the second opening via the second waveguide. Therefore, reflected microwave can be channeled out of the reaction chamber.

An artificial diamond plasma production device has a reaction chamber, a microwave emitting module, and a microwave lens. The microwave emitting module emits a circularly-polarized microwave into the reaction chamber. The microwave emitting module has a polarizing tube, a directing tube, a first waveguide, and a first linearly-polarized microwave source serially connected along a microwave traveling path. The microwave emitting module further has a second waveguide and a first matched load. The polarizing tube is configured to convert a linearly-polarized microwave into a circularly-polarized microwave or the other way round depending on traveling direction of the microwave. The directing tube has a first opening and a second opening which face toward different directions. The first waveguide is connected to the first opening. The first matched load is connected to the second opening via the second waveguide. Therefore, reflected microwave can be channeled out of the reaction chamber.

A method of growing one or more graphene sheets on one or more regions of an optical fiber using plasma-enhanced chemical vapor deposition (PECVD) includes placing the optical fiber in a growth chamber, placing one or more carbon-containing precursors in the growth chamber, forming a reduced pressure in the growth chamber, and flowing methane gas and hydrogen gas into the growth chamber. The method also includes generating a plasma in the growth chamber, forming a gaseous carbon-containing precursor from the one or more carbon-containing precursors, exposing the one or more regions of the optical fiber to the methane gas, the hydrogen gas, the gaseous carbon-containing precursor, and the plasma, and forming the one or more graphene sheets on the one or more regions of the optical fiber.

A method of growing one or more graphene sheets on one or more regions of an optical fiber using plasma-enhanced chemical vapor deposition (PECVD) includes placing the optical fiber in a growth chamber, placing one or more carbon-containing precursors in the growth chamber, forming a reduced pressure in the growth chamber, and flowing methane gas and hydrogen gas into the growth chamber. The method also includes generating a plasma in the growth chamber, forming a gaseous carbon-containing precursor from the one or more carbon-containing precursors, exposing the one or more regions of the optical fiber to the methane gas, the hydrogen gas, the gaseous carbon-containing precursor, and the plasma, and forming the one or more graphene sheets on the one or more regions of the optical fiber.

Methods for filling a substrate feature with a seamless dielectric gap fill are described. Methods comprise sequentially depositing a film with a seam and partially etching the film in the same processing chamber. Methods and apparatus allow for the same hardware to be used for PEALD deposition of a film as well as plasma etch of the film.

A hard coating for a substrate or portion of a razor blade wherein a main layer of the hard coating includes graphene and/or any combination of derivatives thereof. The graphene may be deposited on the substrate or portion of the razor blade using plasma assisted chemical vapor deposition (PECVD) or similar process.