A semiconductor manufacturing apparatus includes: a processing container that accommodates a substrate holder that holds a plurality of substrates in a shelf shape; a gas supply that supplies a processing gas into the processing container; and a microwave introducer that generates a plasma from the processing gas. The microwave introducer includes: a rectangular waveguide provided along a length direction of the processing container and including a plurality of slots that radiates microwaves; and a phase controller that is provided at an end of the rectangular waveguide and controls a phase of the microwaves propagating in the rectangular waveguide.

A plasma processing method that is executed by a plasma processing apparatus including a processing container containing a target substrate, a plurality of plasma sources, and a gas supply apparatus for supplying gas includes: supplying the gas from the gas supply apparatus into the processing container; individually controlling intensity of power introduced from each of the plurality of plasma sources into the processing container; and generating plasma of the gas by the intensity of the power introduced from each of the plurality of plasma sources and depositing a desired film on a second surface of the target substrate that is an opposite surface of a first surface of the target substrate so as to apply desired film stress to a film on the first surface.

A film forming method includes: a loading process of loading a substrate into a processing container; a first process of forming an interface layer having an amorphous structure or a microcrystalline structure on the substrate by plasma of a first mixed gas including a carbon-containing gas; and a second process of forming a graphene film on the interface layer by plasma of a second mixed gas including the carbon-containing gas.

A microwave plasma reactor for manufacturing synthetic diamond material via chemical vapour deposition includes a microwave generator configured to generate microwaves at a frequency f, a plasma chamber that defines a resonance cavity for supporting a microwave resonance mode, a microwave coupling configuration for feeding microwaves from the microwave generator into the plasma chamber, a gas flow system for feeding process gases into the plasma chamber and removing them therefrom, and a substrate holder disposed in the plasma chamber and having a supporting surface for supporting a substrate on which the synthetic diamond material is to be deposited in use. The resonance cavity is configured to have a height that supports a TM.sub.011 resonant mode at the frequency f and is further configured to have a diameter that satisfies the condition that a ratio of the resonance cavity height/the resonance cavity diameter is in the range 0.3 to 1.0.

A microwave plasma reactor for manufacturing synthetic diamond material via chemical vapour deposition includes a microwave generator configured to generate microwaves at a frequency f, a plasma chamber that defines a resonance cavity for supporting a microwave resonance mode, a microwave coupling configuration for feeding microwaves from the microwave generator into the plasma chamber, a gas flow system for feeding process gases into the plasma chamber and removing them therefrom, and a substrate holder disposed in the plasma chamber and having a supporting surface for supporting a substrate on which the synthetic diamond material is to be deposited in use. The resonance cavity is configured to have a height that supports a TM.sub.011 resonant mode at the frequency f and is further configured to have a diameter that satisfies the condition that a ratio of the resonance cavity height/the resonance cavity diameter is in the range 0.3 to 1.0.

Inventive techniques for forming unique compositions of matter are disclosed, as well as various advantageous physical characteristics, and associated properties of the resultant materials. In particular, metal(s) (including various alloys, such as Inconel superalloys) are characterized by having carbon disposed within the metal lattice structure thereof. The carbon is primarily, or entirely, present at interstitial sites of the metal lattice, and may be present in amounts ranging from about 15 wt % to about 90 wt %. The carbon, moreover, forms non-polar covalent bonds with both metal atoms of the lattice and other carbon atoms present in the lattice. This facilitates substantially homogeneous dispersal of the carbon throughout the resultant material, conveying unique and advantageous properties such as strength-to-weight ratio, density, mechanical toughness, sheer strength, flex strength, hardness, anti-corrosiveness, electrical and/or thermal conductivity, etc. as described herein. In some approaches, the composition of matter may be powderized, or the powder may be pelletized.

A method of forming a boron-based film mainly containing boron on a substrate includes forming, on the substrate, an adhesion layer containing an element contained in a surface of the substrate and nitrogen, and subsequently, forming the boron-based film on the adhesion layer.

A method for cleaning a microwave plasma processing apparatus which has a processing container and a microwave radiation part, and which has a window part provided at a position where the microwave radiation part is disposed in the processing container, includes a cleaning step of adjusting a pressure to a pressure corresponding to a size of a cleaning target part, among parts within the processing container including a wall surface of the processing container, the microwave radiation part, and the window part, while supplying a cleaning gas, and performing a cleaning process using plasma of the cleaning gas.

A method for cleaning a microwave plasma processing apparatus which has a processing container and a microwave radiation part, and which has a window part provided at a position where the microwave radiation part is disposed in the processing container, includes a cleaning step of adjusting a pressure to a pressure corresponding to a size of a cleaning target part, among parts within the processing container including a wall surface of the processing container, the microwave radiation part, and the window part, while supplying a cleaning gas, and performing a cleaning process using plasma of the cleaning gas.

Compositions and methods using same are used for forming a silicon-containing film such as without limitation a silicon carbide, silicon oxynitride, a carbon-doped silicon nitride, a carbon-doped silicon oxide, or a carbon doped silicon oxynitride film on at least a surface of a substrate having a surface feature. The silicon-containing film is deposited using an alkylhydridosilane compound containing at least one Si—H bond.