Processes and apparatus are described for atmospheric pressure plasma jet deposition onto a substrate. The process comprises feeding a solution comprising a dissolved metal precursor into a plasma jet. The dissolved metal precursor comprises a precursor metal selected from Groups 2 to 16, with the proviso that the precursor metal does not comprise Mn. The plasma jet is directed towards a surface of the substrate such that material from the plasma jet becomes deposited onto the surface of the substrate. The process provides a means to manufacture conductive, semiconducting or insulating deposits on a substrate in a material-efficient manner without the need for high-temperature post-treatment steps.

Disclosed are methods and systems for filling a gap. An exemplary method comprises providing a substrate to a reaction chamber. The substrate comprises the gap. The method further comprises forming a convertible layer on the substrate and exposing the substrate to a conversion reactant. Accordingly, at least a part of the convertible layer is converted into a gap filling fluid. The gap filling fluid at least partially fills the gap. The methods and systems are useful, for example, in the field of integrated circuit manufacture.

Disclosed are methods and systems for filling a gap. An exemplary method comprises providing a substrate to a reaction chamber. The substrate comprises the gap. The method further comprises forming a convertible layer on the substrate and exposing the substrate to a conversion reactant. Accordingly, at least a part of the convertible layer is converted into a gap filling fluid. The gap filling fluid at least partially fills the gap. The methods and systems are useful, for example, in the field of integrated circuit manufacture.

A film forming method includes: a loading process of loading a substrate into a processing container; a first process of forming an interface layer having an amorphous structure or a microcrystalline structure on the substrate by plasma of a first mixed gas including a carbon-containing gas; and a second process of forming a graphene film on the interface layer by plasma of a second mixed gas including the carbon-containing gas.

A film forming method includes: a loading process of loading a substrate into a processing container; a first process of forming an interface layer having an amorphous structure or a microcrystalline structure on the substrate by plasma of a first mixed gas including a carbon-containing gas; and a second process of forming a graphene film on the interface layer by plasma of a second mixed gas including the carbon-containing gas.

The present disclosure provides a manufacturing method and a grain-oriented electrical steel sheet manufactured thereby, the manufacturing method comprising the steps of: heating a slab; hot rolling the heated slab so as to manufacture a hot-rolled sheet; cold rolling the hot-rolled sheet so as to manufacture a cold-rolled sheet; decarburizing and annealing the cold-rolled steel sheet; forming a ceramic coating layer on a portion or the whole of one surface or two sides of the decarburized and annealed cold-rolled sheet by using a chemical vapor deposition (CVD) process; and finally annealing the cold-rolled sheet on which the ceramic coating layer is formed.

The present disclosure provides a manufacturing method and a grain-oriented electrical steel sheet manufactured thereby, the manufacturing method comprising the steps of: heating a slab; hot rolling the heated slab so as to manufacture a hot-rolled sheet; cold rolling the hot-rolled sheet so as to manufacture a cold-rolled sheet; decarburizing and annealing the cold-rolled steel sheet; forming a ceramic coating layer on a portion or the whole of one surface or two sides of the decarburized and annealed cold-rolled sheet by using a chemical vapor deposition (CVD) process; and finally annealing the cold-rolled sheet on which the ceramic coating layer is formed.

A device including a hard shield material; a layer including aluminum or copper; and a silicon layer having a first thickness is disclosed. The device can also include a silicon layer having a second thickness. A method of making the device is also disclosed.

A device including a hard shield material; a layer including aluminum or copper; and a silicon layer having a first thickness is disclosed. The device can also include a silicon layer having a second thickness. A method of making the device is also disclosed.

A plasma source (100), comprises an outer face (10) with an aperture (14) for delivering a plasma from the aperture. A transport mechanism is configured to transport a substrate (11) and the plasma source relative to each other parallel to the outer face, with a substrate surface to be processed in parallel with at least a part of the outer face that contains the aperture. First (4-1) and second tile (4-2) are arranged within a first plane of a working electrode (22) with neighbouring edges (12) bordering a first plasma collection space (6-1) and a third tile (4-3) is arranged in a second plane of the working electrode parallel to the first plane such that the third tile overlaps neighbouring edges in the first plane. At least one of the working and counter electrodes comprises a local modification (13,15) near said neighbouring edges to increase a plasma delivery to the aperture compensating for loss of plasma collection due to the neighbouring edges.