Methods and apparatus for preparing a protective coating are described. In one example aspect, an apparatus for preparing a protective coating includes a chamber, a substrate positioned within the chamber configured to hold at least a target object, an inlet pipe configured to direct a monomer vapor into the chamber, and one or more electrodes configured to perform a chemical vapor deposition process to produce a multi-layer coating. The chemical vapor deposition process comprises multiple cycles, each cycle comprising a pretreatment phase and a coating phase to produce a layer of the multi-layer coating.

Methods for depositing an amorphous carbon layer onto a substrate, including over previously formed layers on the substrate, use a plasma-enhanced chemical vapor deposition (PECVD) process. In particular, the methods utilize a combination of RF AC power and pulsed DC power to create a plasma which deposits an amorphous carbon layer with a high ratio of sp3 (diamond-like) carbon to sp2 (graphite-like) carbon. The methods also provide for lower processing pressures, lower processing temperatures, and higher processing powers, each of which, alone or in combination, may further increase the relative fraction of sp3 carbon in the deposited amorphous carbon layer. As a result of the higher sp3 carbon fraction, the methods provide amorphous carbon layers having improved density, rigidity, etch selectivity, and film stress as compared to amorphous carbon layers deposited by conventional methods.

A topology-selective deposition method is disclosed. An exemplary method includes depositing a first layer of material overlying a gap or feature on a substrate surface, depositing a second layer of material overlying the first layer of material, and selectively removing the first layer of material.

Provided herein are methods of filling features with metal including inhibition of metal nucleation. Also provided are methods of enhancing inhibition and methods of reducing or eliminating inhibition of metal nucleation.

Methods for depositing a dielectric material using RF bias pulses along with remote plasma source deposition for manufacturing semiconductor devices, particularly for filling openings with high aspect ratios in semiconductor applications are provided. For example, a method of depositing a dielectric material includes providing a gas mixture into a processing chamber having a substrate disposed therein, forming a remote plasma in a remote plasma source and delivering the remote plasma to an interior processing region defined in the processing chamber, applying a RF bias power to the processing chamber in pulsed mode, and forming a dielectric material in an opening defined in a material layer disposed on the substrate in the presence of the gas mixture and the remote plasma.

Methods for depositing a dielectric material using RF bias pulses along with remote plasma source deposition for manufacturing semiconductor devices, particularly for filling openings with high aspect ratios in semiconductor applications are provided. For example, a method of depositing a dielectric material includes providing a gas mixture into a processing chamber having a substrate disposed therein, forming a remote plasma in a remote plasma source and delivering the remote plasma to an interior processing region defined in the processing chamber, applying a RF bias power to the processing chamber in pulsed mode, and forming a dielectric material in an opening defined in a material layer disposed on the substrate in the presence of the gas mixture and the remote plasma.

A system and method are described for depositing a material onto a receiving surface, where the material is formed by use of a plasma to modify a source material in-transit to the receiving surface. The system comprises a microwave generator electronics stage. The system further includes a microwave applicator stage including a cavity resonator structure. The cavity resonator structure includes an outer conductor, an inner conductor, and a resonator cavity interposed between the outer conductor and the inner conductor. The system also includes a multi-component flow assembly including a laminar flow nozzle providing a shield gas, a zonal flow nozzle providing a functional process gas, and a source material flow nozzle configured to deliver the source material. The source material flow nozzle and zonal flow nozzle facilitate a reaction between the source material and the functional process gas within a plasma region.

A system and method are described for depositing a material onto a receiving surface, where the material is formed by use of a plasma to modify a source material in-transit to the receiving surface. The system comprises a microwave generator electronics stage. The system further includes a microwave applicator stage including a cavity resonator structure. The cavity resonator structure includes an outer conductor, an inner conductor, and a resonator cavity interposed between the outer conductor and the inner conductor. The system also includes a multi-component flow assembly including a laminar flow nozzle providing a shield gas, a zonal flow nozzle providing a functional process gas, and a source material flow nozzle configured to deliver the source material. The source material flow nozzle and zonal flow nozzle facilitate a reaction between the source material and the functional process gas within a plasma region.

A substrate processing method capable of forming a film with an improved step coverage on a surface of a gap structure having a high aspect ratio includes: providing a gap structure having a first step and a second step portion; supplying gas including a source gas onto the gap structure; generating active species from the source gas; generating neutral molecules by neutralizing the active species, and moving the neutral molecules in a direction toward a lower surface of a recess extending between the first stepped portion and the second stepped portion; and exciting the neutral molecules moving in the direction toward the lower surface.

A coated glass container includes: a glass surface; and a coating that coats at least part of the glass surface to form a coated glass surface. The coating includes at least one layer. The coated glass container fulfills the following parameter: leaching of [Na] ions after an alkaline treatment is 10 mg/l or less [Na] ions.