A device for manufacturing nanostructures consisting of carbon, such as monolayers, multilayer sheet structures, tubes, or fibers includes a gas inlet element having a housing cavity enclosed by housing walls, into which a gas feed line opens, through which a gaseous, in particular carbonaceous starting material can be fed into the housing cavity, having a plasma generator, which has components arranged at least partially in the housing cavity, which has at least one plasma electrode to which electrical voltage can be applied, to apply energy to the gaseous starting material by igniting a plasma and thus converting the gaseous starting material into a gaseous intermediate product, and having a gas outlet surface having a plurality of gas outlet openings, through which the gaseous intermediate product can exit out of the housing cavity. A gas heating unit is provided for assisting the conversion, which is arranged downstream of the components.

A device for manufacturing nanostructures consisting of carbon, such as monolayers, multilayer sheet structures, tubes, or fibers includes a gas inlet element having a housing cavity enclosed by housing walls, into which a gas feed line opens, through which a gaseous, in particular carbonaceous starting material can be fed into the housing cavity, having a plasma generator, which has components arranged at least partially in the housing cavity, which has at least one plasma electrode to which electrical voltage can be applied, to apply energy to the gaseous starting material by igniting a plasma and thus converting the gaseous starting material into a gaseous intermediate product, and having a gas outlet surface having a plurality of gas outlet openings, through which the gaseous intermediate product can exit out of the housing cavity. A gas heating unit is provided for assisting the conversion, which is arranged downstream of the components.

Mono-substituted TSA precursor Si-containing film forming compositions are disclosed. The precursors have the formula: (SiH.sub.3).sub.2N—SiH.sub.2—X, wherein X is selected from a halogen atom; an isocyanato group; an amino group; an N-containing C.sub.4-C.sub.10 saturated or unsaturated heterocycle; or an alkoxy group. Methods for forming the Si-containing film using the disclosed mono-substituted TSA precursor are also disclosed.

Mono-substituted TSA precursor Si-containing film forming compositions are disclosed. The precursors have the formula: (SiH.sub.3).sub.2N—SiH.sub.2—X, wherein X is selected from a halogen atom; an isocyanato group; an amino group; an N-containing C.sub.4-C.sub.10 saturated or unsaturated heterocycle; or an alkoxy group. Methods for forming the Si-containing film using the disclosed mono-substituted TSA precursor are also disclosed.

A pulsed radio frequency inductive plasma source and method are provided. The source may generate plasma at gas pressures from 1 torr to 2000 torr. By utilizing high power RF generation from fast solid state switches such as Insulated-Gate Bipolar Transistor (IGBT) combined with the resonance circuit, large inductive voltages can be applied to RF antennas to allow rapid gas breakdown from 1-100 μs. After initial breakdown, the same set of switches or an additional rf pulsed power systems are utilized to deliver large amount of rf power, between 10 kW to 10 MW, to the plasmas during the pulse duration of 10 μs-10 ms. In addition, several methods and apparatus for controlling the pulse power delivery, timing gas and materials supply, constructing reactor and substrate structure, and operating pumping system and plasma activated reactive materials delivery system will be disclosed. When combined with the pulsed plasma generation, these apparatuses and the methods can greatly improve the applicability and the efficacy of the industrial plasma processing.

A pulsed radio frequency inductive plasma source and method are provided. The source may generate plasma at gas pressures from 1 torr to 2000 torr. By utilizing high power RF generation from fast solid state switches such as Insulated-Gate Bipolar Transistor (IGBT) combined with the resonance circuit, large inductive voltages can be applied to RF antennas to allow rapid gas breakdown from 1-100 μs. After initial breakdown, the same set of switches or an additional rf pulsed power systems are utilized to deliver large amount of rf power, between 10 kW to 10 MW, to the plasmas during the pulse duration of 10 μs-10 ms. In addition, several methods and apparatus for controlling the pulse power delivery, timing gas and materials supply, constructing reactor and substrate structure, and operating pumping system and plasma activated reactive materials delivery system will be disclosed. When combined with the pulsed plasma generation, these apparatuses and the methods can greatly improve the applicability and the efficacy of the industrial plasma processing.

A coated glass element includes: a glass surface; and a coating that coats at least part of the glass surface. The coating includes at least one layer. The at least one layer of the coating fulfills the following parameter: [Si.sub.2C.sub.5H.sub.15O.sub.2.sup.−].sub.20/[Si.sub.2C.sub.5H.sub.15O.sub.2.sup.−].sub.80≥1.0. [Si.sub.2C.sub.5H.sub.15O.sub.2.sup.−].sub.20 are counts of [Si.sub.2C.sub.5H.sub.15O.sub.2] ions, measured by a time-of-flight secondary ion mass spectrometry (TOF-SIMS), at 20% of a time a sputter gun beam needs to reach the glass surface and [Si.sub.2C.sub.5H.sub.15O.sub.2.sup.−].sub.80 are counts of [Si.sub.2C.sub.5H.sub.15O.sub.2.sup.−].sub.80 ions, measured by a TOF-SIMS, at 80% of a time a sputter gun beam needs to reach the glass surface.

An article that includes a substrate and an amorphous, covalently-bonded layer on the surface of the substrate. The substrate may be a crystalline ceramic and/or may have a surface with a first surface roughness (Ra) of at least 100 angstroms, and the amorphous, covalently-bonded layer has a second surface roughness (Ra) of up to 15 angstroms. The substrate may have a dimension of at least 50 mm, and the amorphous, covalently-bonded layer may have a thickness of at least five micrometers. A method of making an article is also disclosed. The method includes forming an amorphous, covalently-bonded layer on the surface of the substrate by plasma deposition and, in some embodiments, polishing the amorphous, covalently-bonded layer to a second surface roughness (Ra) of up to 15 angstroms. The amorphous, covalently-bonded layer in the article and method includes silicon, oxygen, carbon, and hydrogen atoms.

A method for passivating a metal surface including, generating an atmospheric plasma beam by electrical discharge in a working gas, introducing an acid-containing passivating agent into the plasma beam, applying the plasma beam containing the passivating agent to the metal surface, and depositing a passivating salt on the metal surface by a reaction between the acid-containing passivating agent and the metal surface. This method simplifies the process for passivating a metal surface and renders it more effective.

A method for passivating a metal surface including, generating an atmospheric plasma beam by electrical discharge in a working gas, introducing an acid-containing passivating agent into the plasma beam, applying the plasma beam containing the passivating agent to the metal surface, and depositing a passivating salt on the metal surface by a reaction between the acid-containing passivating agent and the metal surface. This method simplifies the process for passivating a metal surface and renders it more effective.