A plasma processing apparatus comprising: a chamber; an upper electrode; a shower head having openings, an inner space of the chamber being divided into a first space and a second space; a shielding part including first and second shielding plates arranged in parallel between the upper electrode and the shower head, the shielding part having through-holes aligned with the openings; a gas supply device configured to supply a gas; a radio frequency (RF) power supply configured to output an RF voltage; a voltage applying part configured to select ions or radicals passing through the through-holes in the plasma by applying a control voltage to the shielding part; and a controller configured to control the voltage applying part by independently applying a control voltage to each of the first and second shield plates depending on control from the controller.

A plasma processing apparatus comprising: a chamber; an upper electrode; a shower head having openings, an inner space of the chamber being divided into a first space and a second space; a shielding part including first and second shielding plates arranged in parallel between the upper electrode and the shower head, the shielding part having through-holes aligned with the openings; a gas supply device configured to supply a gas; a radio frequency (RF) power supply configured to output an RF voltage; a voltage applying part configured to select ions or radicals passing through the through-holes in the plasma by applying a control voltage to the shielding part; and a controller configured to control the voltage applying part by independently applying a control voltage to each of the first and second shield plates depending on control from the controller.

A processing method and system are provided for processing a substrate with a plasma in the presence of an electro-negative gas. A processing gas is injected into a processing chamber. The gas includes a high electron affinity gas species. A surface is provided in the plasma chamber onto which the gas species has a tendency to chemisorb. The gas species is exposed to the surface, chemisorbed onto it, and the surface is exposed to energy that causes negative ions of the chemisorbed gas species, that interact in the plasma to release secondary electrons. A neutralizer grid may be provided to separate from the chamber a second chamber in which forms a low energy secondary plasma for processing the substrate that is dense in electrons and contains high energy neutrals of the gas species and high energy positive ions of processing gas. Pulsed energy may be used to excite plasma or bias the substrate. A hollow cathode source is also provided.

A method for processing a substrate in a substrate processing system includes flowing reactant gases into a process chamber including a substrate, supplying a first power level sufficient to promote rearrangement of molecules on a surface of the substrate, waiting a first predetermined period, and, after the first predetermined period, performing plasma-enhanced, pulsed chemical vapor deposition of film on the substrate by supplying one or more precursors while supplying a second power level for a second predetermined period. The second power level is greater than the first power level. The method further includes removing reactants from the process chamber.

A method for processing a substrate in a substrate processing system includes flowing reactant gases into a process chamber including a substrate, supplying a first power level sufficient to promote rearrangement of molecules on a surface of the substrate, waiting a first predetermined period, and, after the first predetermined period, performing plasma-enhanced, pulsed chemical vapor deposition of film on the substrate by supplying one or more precursors while supplying a second power level for a second predetermined period. The second power level is greater than the first power level. The method further includes removing reactants from the process chamber.

A coated glass element includes: a glass surface and a coating that coats at least part of the glass surface. The coating has at least one layer. The at least one layer of the coating fulfills the following parameter: [Al.sup.+].sub.80/[Al.sup.+].sub.20≥1.8. [Al.sup.+].sub.20 are counts of [Al.sup.+] ions, measured by a time-of-flight secondary ion mass spectrometry (TOF-SIMS), at 20% of a time a sputter gun beam needs to reach the glass surface and [Al.sup.+].sub.80 are counts of [Al.sup.+] ions, measured by a TOF-SIMS, at 80% of a time a sputter gun beam needs to reach the glass surface.

Embodiments of the present invention provide a method and apparatus for plasma processing a substrate to form a film on the substrate and devices disposed thereon by controlling the ratio of ions to radicals in the plasma at a given pressure. A given pressure may be maintained to promote ion production using one plasma source, and a second plasma source may be used to provide additional radicals. In one embodiment, a low pressure plasma is generated in a processing region having the substrate positioned therein, and a high pressure plasma is generated in separate region. Radicals from the high pressure plasma are injected into the processing region having the low pressure plasma, thus, altering the natural distribution of radicals to ions at a given operating pressure. The resulting process and apparatus enables tailoring of the ion to radical ratio to allow better control of forming films on high aspect ratio features, and thus improve corner rounding, conformality of sidewall to bottom trench growth, and selective growth.

Embodiments of the present invention provide a method and apparatus for plasma processing a substrate to form a film on the substrate and devices disposed thereon by controlling the ratio of ions to radicals in the plasma at a given pressure. A given pressure may be maintained to promote ion production using one plasma source, and a second plasma source may be used to provide additional radicals. In one embodiment, a low pressure plasma is generated in a processing region having the substrate positioned therein, and a high pressure plasma is generated in separate region. Radicals from the high pressure plasma are injected into the processing region having the low pressure plasma, thus, altering the natural distribution of radicals to ions at a given operating pressure. The resulting process and apparatus enables tailoring of the ion to radical ratio to allow better control of forming films on high aspect ratio features, and thus improve corner rounding, conformality of sidewall to bottom trench growth, and selective growth.

Systems for depositing materials and related methods are described. The systems allow condensing or depositing a precursor on a substrate, and then curing condensed or deposited precursor to form a layer.

Systems for depositing materials and related methods are described. The systems allow condensing or depositing a precursor on a substrate, and then curing condensed or deposited precursor to form a layer.