A chemical vapor deposition process for depositing a coating comprising silicon oxide and titanium oxide is provided. A coating formed by the chemical vapor deposition process is also provided.

A thin film deposition system includes a vacuum-preloaded gas bearing deposition head positioned in an external environment having an ambient pressure, the deposition head having an output face including a plurality of source openings through which gaseous materials are supplied and one or more exhaust openings. An exhaust pressure at the exhaust openings is less than ambient pressure, and a source pressure at the source openings is greater than that at the exhaust openings, with the pressure at the outermost source openings being greater than ambient pressure. A motion control system moves a substrate unit over the output face in the in-track direction without constraining its motion in a direction normal to the output face to a point where a center of gravity of the substrate unit is beyond the first edge of the output face.

A substrate processing apparatus, including a reaction chamber to process a substrate, a photon source to provide the reaction chamber with photons from the top side of the reaction chamber, a substrate support to support the substrate, a chemical inlet to provide the reaction chamber with a reactive chemical; and a chemical outlet to exhaust gases from the reaction chamber, the chemical outlet including a surface separating the reaction chamber from a surrounding space.

A conductor material includes a metal matrix, and a first carbon allotrope distributed within the metal matrix, the first carbon allotrope being aligned with a direction of electric current flow through a length of the metal matrix. The metal matrix and the first carbon allotrope have an electrical interfacial coherency.

Processing a flexible substrate of a matrix-shaped or lattice-shaped construction material. A first layer thereof is transported in a first transport direction, and a second layer thereof is transported in parallel with and closely spaced apart from the first layer in an opposite, second transport direction through a free region in the evacuable process area. A usable flux of a processing instrument penetrates the first and the second layer of the flexible substrate simultaneously while transported through the free region in an opposite direction. Also, a vacuum processing system including two roller groups, each group including smaller and larger rollers deflecting the flexible substrate. The free region including a processing instrument arranged between the roller groups through which the flexible substrate is transported in an opposite direction and without directional change. At least two closely spaced apart layers of the flexible substrate are transported in opposite directions.

Embodiments of the present disclosure generally relate to flexible substrate fabrication. In particular, embodiments described herein relate to an apparatus and methods for flexible substrate fabrication using nip rollers to improve tension uniformity. In one embodiment, a roller assembly includes a primary roller for transporting a flexible substrate, wherein the primary roller has a first end and a second end, wherein the flexible substrate has a coating disposed hereon, and wherein one or more edge regions are not covered by the coating. The roller assembly further includes a first nip roller disposed at the first end of the primary roller that contacts a first edge region of the one or more edge regions, and a second nip roller disposed at the second end of the primary roller that contacts a second edge region of the one or more edge regions.

A stress-free transparent silicon oxide coated polymer substrates and a method for depositing a stress-free transparent silicon oxide based layer on polymer substrates using a PECVD device including at least one hollow cathode plasma source.

The present disclosure relates to an atomic layer deposition apparatus, and more particularly, to an atomic layer deposition apparatus for depositing an atomic layer on a flexible substrate.

The roll-to-roll atomic layer deposition apparatus according to the embodiment of the present disclosure includes: a casing for providing an inner space that maintains a sealed state; a substrate transfer assembly which is provided in the inner space of the casing and includes a plurality of roll units; and a gas supply assembly for depositing an atomic layer on one surface and a rear surface of a flexible substrate transferred by the substrate transfer assembly, wherein the gas supply assembly includes an upper gas supply module facing the one surface of the substrate, and a lower gas supply module which is spaced apart from the upper gas supply module with the substrate being interposed therebetween and faces the rear surface of the substrate, and the upper gas supply module and the lower gas supply module include at least one purge gas supply unit, at least one reaction gas supply unit, and at least one source gas supply unit that are disposed along the transfer direction of the substrate.

A roller for transporting a flexible substrate is described. The roller includes a first coolant supply for cooling a first part of the roller and a second coolant supply for cooling a second part and a third part of the roller. The first part is provided between the second part and the third part. Additionally, a vacuum processing apparatus including a roller and a method of cooling a roller are described.

A roller for transporting a flexible substrate is described. The roller includes a main body having a plurality of gas supply slits provided in an outer surface of the main body. The plurality of gas supply slits extends in a direction of a central rotation axis of the roller. Further, the roller includes a sleeve provided circumferentially around and in contact with the main body. The sleeve has a plurality of gas outlets being provided above the plurality of gas supply slits. Further, the sleeve includes a metal layer embedded within isolating material.