Patent classifications
C23C18/1225
Selective chemical bath deposition of iridium oxide on thin film flexible substrates
A flexible thin film metal oxide electrode fabrication methods and devices are provided and illustrated with thin film polyimide electrode formation and IrOx chemical bath deposition. Growth factors of the deposited film such as film thickness, deposition rate and quality of crystallites can be controlled by varying the solution pH, temperature and component concentrations of the bath. The methods allow for selective deposition of IrOx on a flexible substrate (e.g. polyimide electrode) where the IrOx will only coat onto an exposed metal area but not the entire device surface. This feature enables the bath process to coat the IrOx onto every individual electrode in one batch, and to ensure electrical isolation between channels. The ability to perform selective deposition, pads for external connections will not have IrOx coverage that would otherwise interfere with a soldering/bumping process.
Mesoporous silica film structure having ultra-large pore and method of manufacturing the same
The present invention relates to a mesoporous film structure having ultra-large pores therein and a method of manufacturing the same, which includes, The manufacturing method includes a pretreatment step of pretreating a support so that micelles and silica are deposited on the support, a micelle formation step of mixing a cationic surfactant and an anionic co-surfactant for forming the micelles at a predetermined ratio in a support-carried water tank prepared in the pretreatment step, followed by heating, thus forming enlarged micelles on the support through magnetic bonding of the cationic surfactant and the anionic co-surfactant, a silica deposition step of supplying a silica precursor solution to the water tank, followed by heating, thus depositing silica on the support after the micelle formation step, and a washing step of washing the support so that residual materials (containing the micelles) are removed after the silica deposition step.
BARRIER FILM
Provided is a barrier film, comprising: a base layer; and an inorganic layer including a first region and a second region, which have different elemental contents (atomic %) of Si, N, and O from each other as measured by XPS, and having a compactness expressed through an etching rate of 0.17 nm/s or less in the thickness direction for an Ar ion etching condition to etch Ta.sub.2O.sub.5 at a rate of 0.09 nm/s, wherein the second region has a higher elemental content of N than that of the first region, the first region has a thickness of 50 nm or more, and the ratio (d1/d2) of the thickness (d1) of the first region to the thickness (d2) of the second region is 2 or less, the barrier film having excellent barrier properties and optical properties. The barrier film can be used for electronic products sensitive to moisture or the like.
ELECTRODE FOR THE ELECTROPLATING OR ELECTRODEPOSITION OF A METAL
An electrode for electroplating or electrodeposition of a metal and to the method for obtaining the same is provided. The electrode has a conductive substrate, at least one layer of an electrochemically active coating placed on the substrate, and at least one topcoating layer of valve metal.
Anticorrosion layer and process for production thereof
An anti-corrosion coating to protect against corrosion, comprising: a high-density protective coating on a substrate which is prone to corrosion, preferably metals and/or alloys thereof, containing pre-condensed coat-forming alkoxysilane precursors, wherein the molecules of the pre-condensed coat-forming alkoxysilane precursors are built up from monomer units selected from the group formed by coat-forming alkoxysilane precursors, wherein the molecules of the pre-condensed coat-forming alkoxysilane precursors are cross-linked with each other, wherein the high-density protective coating has a coating thickness of at least 50 μm. The high-density protective coating formed by an inorganic-organic hybrid material, which is preferably produced without solvents (i.e. without the addition of solvents, in particular organic solvents), is comprised of at least one coat-forming alkoxysilane precursor, in particular selected from the group formed by trialkoxysilane precursors.
ANODE FOR ELECTROLYTIC EVOLUTION OF CHLORINE
The invention relates to a process for obtaining a electrode usable as a anode in electrolytic cells for the production of chlorine. The electrode thus obtained comprises a catalytic layer containing oxides of tin, ruthenium, iridium and titanium applied to a substrate of a valve metal.
Sol-gel coating compositions and related processes
An alkoxysilane is contacted with water and an inorganic acid to form a first composition. A zirconium alkoxide is contacted with an organic acid to form a second composition. One or more alkoxysilanes and an organic acid are contacted with a mixture of the first and second compositions to form a sol-gel composition, to which a photoinitiator is added. The sol-gel composition has a ratio of a number of moles of silicon to a number of moles of zirconium (n.sub.Si/n.sub.Zr) ranging from about 2 to about 10. The sol-gel composition is applied on a substrate (e.g., an aluminum alloy substrate) multiple times to form multiple sol-gel layers, and at least one of the sol-gel layers is cured by UV radiation. The multiple sol-gel layers are then thermally cured.
STRUCTURALLY MODIFIED NANOSHEETS OF METAL OXIDES AND RELATED METHODS
Electrocatalytic materials and methods of making the electrocatalytic materials are provided. Such a method may comprise forming precursor nanosheets comprising a precursor metal on a surface of a substrate; exposing the precursor nanosheets to a modifier solution comprising a polar, aprotic solvent and a metal salt at a temperature and for a period of time, the metal salt comprising a metal cation and an anion, thereby forming modified precursor nanosheets; and calcining the modified precursor nanosheets for a period of time to form an electrocatalytic material comprising structurally modified nanosheets and the substrate, each nanosheet extending from the surface of the substrate and having a solid matrix. The solid matrix defines pores distributed throughout the solid matrix and comprises a precursor metal oxide and domains of another metal oxide distributed throughout the precursor metal oxide; or the solid matrix comprises the precursor metal oxide and nanoparticles of the another metal oxide distributed on a surface of the solid matrix.
MESOPOROUS SILICA FILM STRUCTURE HAVING ULTRA-LARGE PORE AND METHOD OF MANUFACTURING THE SAME
The present invention relates to a mesoporous film structure having ultra-large pores therein and a method of manufacturing the same. More particularly, the present invention relates to a mesoporous film structure having ultra-large pores therein and a method of manufacturing the same, in which a mesoporous film having ultra-large pores therein is formed on supports including various materials and having various shapes under chemically mild conditions. The size of the pores in the film is capable of being adjusted, and a patterned mesoporous structure is formed on the upper surface of the support rather than throughout the entire support.
PRINTABLE AMMONIUM-BASED CHALCOGENOMETALATE FLUIDS
In one example in accordance with the present disclosure, a printable ammonium-based chalcogenometalate fluid is described. The fluid includes an ammonium-based chalcogenometalate precursor. The printable ammonium-based chalcogenometalate fluid also includes an aqueous solvent and water. The printable ammonium-based chalcogenometalate fluid is printed onto a substrate. In the presence of heat, the aqueous solvent, water, and ammonium-based chalcogenometalate precursor break down to form a transition metal dichalcogenide having the form MX.sub.2.