The disclosure describes a method of forming a carbon-carbon composite component including depositing an initial carbon material into a porous preform using chemical vapor deposition (CND) or chemical vapor infiltration (CVI) to form a rigidized porous preform, infusing the rigidized porous preform with an isotropic resin, pyrolyzing the infused isotropic resin to form an isotropic carbon within pores of the rigidized porous preform, and encapsulating the isotropic carbon, with a graphitizable carbon to form the carbon-carbon composite component.

Disclosed is a method of manufacturing a dishwasher including: forming a first layer containing zirconium oxide and silicon oxide on a surface of the inner wall at a heat treatment of 200 C. or higher; forming a second layer containing an oxoacid on a surface of the first layer at a heat treatment temperature lower than the heat treatment temperature of the first layer; and obtaining a thin-film layer containing zirconium oxide and silicon oxide on the surface of the inner wall and having a contact angle of water of 20 or less on the surface, after removing the second layer by using a washing method, in which the first layer contains the zirconium oxide in an amount of 80 mass % or more in terms of oxide and the silicon oxide in an amount of 1-20 mass % in terms of oxide.

Provided is a barrier film, comprising: a base layer; and an inorganic layer including a first region and a second region, which have different elemental contents (atomic %) of Si, N, and O from each other as measured by XPS, and having a compactness expressed through an etching rate of 0.17 nm/s or less in the thickness direction for an Ar ion etching condition to etch Ta.sub.2O.sub.5 at a rate of 0.09 nm/s, wherein the second region has a higher elemental content of N than that of the first region, the first region has a thickness of 50 nm or more, and the ratio (d1/d2) of the thickness (d1) of the first region to the thickness (d2) of the second region is 2 or less, the barrier film having excellent barrier properties and optical properties. The barrier film can be used for electronic products sensitive to moisture or the like.

Provided is a barrier film, comprising: a base layer; and an inorganic layer including Si, N, and O, wherein the inorganic layer has a thickness of 600 nm or less, and the film has a water vapor transmission rate of 0.5?10.sup.?3 g/m.sup.2.Math.day as measured under conditions of a temperature of 38? C. and 100% relative humidity. The barrier film has excellent barrier properties and optical properties and can be used for electronic products sensitive to moisture.

Provided is a barrier film, comprising a base layer and an inorganic layer including a first region and a second region, which have different elemental contents (atomic %) of Si, N, and O from each other as measured by XPS, and having a compactness expressed through an etching rate of 0.17 nm/s in the thickness direction for an Ar ion etching condition to etch Ta.sub.2O.sub.5 at a rate of 0.09 nm/s, wherein the second region has a higher elemental content of N than that of the first region, and the second region has a thickness of 10% or more relative to the total thickness of the inorganic layer. The barrier film has excellent barrier properties and optical properties and can be used for electronic products which are sensitive to moisture and the like.

A heterojunction anode for electrolysis is disclosed. The anode has a first conductive metal oxide (FCMO) layer, a second semiconductor layer contacting the FCMO layer, and one or more islands of a third semiconductor contacting the second semiconductor layer. The FCMO layer may be formed on a metallic base, such as titanium. The FCMO layer may include iridium, the second semiconductor layer may include titanium oxide, and the third semiconductor may include tin oxide. The anode may be manufactured using spray pyrolysis to apply each semiconductor material. The anode may be configured such that when placed in an electrolyte at least a portion of the second semiconductor layer and the islands are in direct physical contact with the electrolyte. The second semiconductor interlayer and third semiconductor islands enhance the production of reactive chlorine in chlorinated water. A water treatment system and method using the anode are also disclosed.

A method of coating the surface of a metal substrate includes a) applying a first composition on the surface of a metal substrate, the first composition being a solution comprising a liquid medium including sol-gel precursors of alcoxysilane type or of metallo-organic type; b) subjecting the first composition to first heat treatment to form an anchor layer on the metal substrate in which the sol-gel precursors are bonded to the metal substrate, a first temperature being imposed during the first heat treatment that is sufficient to eliminate all or part of the liquid medium and to encourage the bonding of the sol-gel precursors to the metal substrate; and c) applying a second composition on the anchor layer. The second composition includes coating compounds to obtain a coating on the anchor layer by forming bonds between the sol-gel precursors and the coating compounds.

Methods are provided for selectively depositing a material on a first surface of a substrate relative to a second, different surface of the substrate. The selectively deposited material can be, for example, a metal, metal oxide, or dielectric material.

To provide a PBNZT ferroelectric film capable of preventing sufficiently oxygen ion deficiency. The PBNZT ferroelectric film according to an embodiment of the present invention is a ferroelectric film including a perovskite-structured ferroelectric substance represented by ABO.sub.3, wherein the perovskite-structured ferroelectric substance is a PZT-based ferroelectric substance containing Pb.sup.2+ as A-site ions and containing Zr.sup.4+ and Ti.sup.4+ as B-site ions, and the A-site contains Bi.sup.3+ as A-site compensation ions and the B-site contains Nb.sup.5+ as B-site compensation ions.

A layered tetravalent metal phosphate composition (e.g., a layered zirconium phosphate composition) and a first corrosion inhibitor (e.g., cerium (III), a vanadate, a molybdate, a tungstate, a manganous, a manganate, a permanganate, an aluminate, a phosphonate, a thiazole, a triazole, and/or an imidazole) is dispersed in an aqueous solution and stirred to form a first solution. A precipitate of the first solution is collected and washed to form a first corrosion inhibiting material (CIM), which includes the first corrosion inhibitor intercalated in the layered tetravalent metal phosphate composition. The first CIM is added to a first sol-gel composition to form a first CIM-containing sol-gel composition. The first CIM-containing sol-gel composition is applied on a substrate to form a CIM-containing sol-gel layer, cured by UV radiation, and thermally cured to form a corrosion-resistant coating. One or more additional sol-gel composition may be applied on the substrate.