Methods for forming sintered-bonded high temperature coatings over ceramic turbomachine components are provided, as are ceramic turbomachine components having such high temperature coatings formed thereover. In one embodiment, the method includes the step or process of removing a surface oxide layer from the ceramic component body of a turbomachine component to expose a treated surface of the ceramic component body. A first layer of coating precursor material, which has a solids content composed predominately of at least one rare earth silicate by weight percentage, is applied to the treated surface. The first layer of the coating precursor material is then heat treated to sinter the solids content and form a first sintered coating layer bonded to the treated surface. The steps of applying and sintering the coating precursor may be repeated, as desired, to build a sintered coating body to a desired thickness over the ceramic component body.

A material contains open pores in which the channels and pores that are internally coated with at least one layer of phosphorus-containing alumina. Such material is formed by infiltrating a porous material one or more times with a non-colloidal, low-viscosity liquid coating precursor, drying, and curing the coating precursor to form a phosphorus-containing alumina layer within pores of the material.

A solution deposition method includes: applying a liquid precursor solution to a substrate, the precursor solution including an oxide of a first metal, a hydroxide of the first metal, or a combination thereof, dissolved in an aqueous ammonia solution; evaporating the precursor solution to directly form a solid seed layer on the substrate, the seed layer including an oxide of the first metal, a hydroxide of the first metal, or a combination thereof, the seed layer being substantially free of organic compounds; and growing a bulk layer on the substrate, using the seed layer as a growth site or a nucleation site.

Provided is a barrier film, comprising: a base layer; and an inorganic layer including Si, N, and O, wherein the inorganic layer has a thickness of 600 nm or less, and the film has a water vapor transmission rate of 0.5?10.sup.?3 g/m.sup.2.Math.day as measured under conditions of a temperature of 38? C. and 100% relative humidity. The barrier film has excellent barrier properties and optical properties and can be used for electronic products sensitive to moisture.

Various embodiments provide ice mitigating surface coatings and methods for applying ice mitigating surface coatings. Various embodiment ice mitigating surface coatings may be formed by hydrolysis of one or more substituted n-alkyldimethylalkoxysilanes terminated with functionalities having the following characteristics with respect to water: 1) non-polar interactions; 2) hydrogen bonding through donor and acceptor interactions; or 3) hydrogen bonding through acceptor interactions only. The substituted n-alkyldimethylalkoxysilanes of the various embodiments may include methyl terminated species, hydroxyl terminated species, ethylene glycol terminated species, and methoxyethylene glycol terminated species. Various embodiment ice mitigating surface coatings may be applied to metal surfaces, such as aluminum surfaces. Various embodiment substituted n-alkyldimethylalkoxysilanes may have an aliphatic chain that is saturated and liner or branched or that is partially unsaturated and liner or branched.

A material contains open pores in which the channels and pores that are internally coated with at least one layer of phosphorus-containing alumina. Such material is formed by infiltrating a porous material one or more times with a non-colloidal, low-viscosity liquid coating precursor, drying, and curing the coating precursor to form a phosphorus-containing alumina layer within pores of the material.

A thin-film dielectric having a higher dielectric constant than usual ones and not requiring a special single crystal substrate, and a large-capacity thin-film capacitor element using the thin-film dielectric, in which a BaTiO.sub.3-based perovskite solid solution and a KNbO.sub.3-based perovskite solid solution are alternately formed to form a crystal structure gradient region where a lattice constant continuously changes at the interface, and thus crystal lattice strain occurs, thereby permitting the production of a thin-film dielectric having a high dielectric constant; also, a large-capacity thin-film capacitor element can be produced by using the thin-film dielectric of the present invention.

A solution deposition method includes: applying a liquid precursor solution to a substrate, the precursor solution including an oxide of a first metal, a hydroxide of the first metal, or a combination thereof, dissolved in an aqueous ammonia solution; evaporating the precursor solution to directly form a solid seed layer on the substrate, the seed layer including an oxide of the first metal, a hydroxide of the first metal, or a combination thereof, the seed layer being substantially free of organic compounds; and growing a bulk layer on the substrate, using the seed layer as a growth site or a nucleation site.

Electrochromic tungsten or molybdenum oxide and their doped derivative nanomaterials are prepared using sol-gel or vapor deposition methods from precursors containing only tungsten, oxygen, carbon and hydrogen, as other elements can generate optical defects impacting the electrochromic performances. Preferably, the liquid and volatile compound W(O)(OsBu).sub.4 is the precursor used.

A solution deposition method including: applying a liquid precursor solution to a substrate, the precursor solution including an oxide of a first metal, a hydroxide of the first metal, or a combination thereof, dissolved in an aqueous ammonia solution; evaporating the precursor solution to directly form a solid seed layer on the substrate, the seed layer including an oxide of the first metal, a hydroxide of the first metal, or a combination thereof, the seed layer being substantially free of organic compounds; and growing a bulk layer on the substrate, using the seed layer as a growth site or a nucleation site.