Provided is a device and a method for forming a metal plating film having a thick film thickness by a solid substitution-type electroless plating method. The present disclosure relates to a film formation device for forming a film of a first metal on a plating film of a second metal by a solid substitution-type electroless plating method, comprising: a conductive mounting base; a third metal; an insulating material; a microporous membrane; a plating bath chamber; and a pressing unit, wherein the third metal has an ionization tendency larger than ionization tendencies of the first metal and the second metal, and wherein the insulating material is installed between a base material and the third metal so as to contact respective materials of the base material and the third metal when the base material having the plating film of the second metal is installed.

An apparatus for treating a substrate includes a vessel having a sealable process space formed therein in which the substrate is accommodated, a supply port that is provided inside a wall of the vessel and that supplies a process fluid into the process space, an exhaust port provided inside the wall of the vessel and spaced apart from the supply port, and a buffer member provided in the process space, the buffer member being provided in a position overlapping with the supply port and the exhaust port when viewed from above. The buffer member includes a sidewall portion that is located outward of the supply port and the exhaust port and that makes contact with the wall of the vessel and an upper wall portion having a through-hole formed therein to correspond to a center of the substrate, the through-hole forming a straight flow path in an up/down direction.

A substrate processing apparatus includes a liquid processing module, provided with a carry-out/in opening of a substrate, including therein a first liquid processing device and a second liquid processing device; a module-outside transfer device configured to carry the substrate out from and into the liquid processing module; and a module-inside transfer device configured to transfer the substrate between the first liquid processing device and the second liquid processing device. The first liquid processing device is equipped with a first holder configured to hold the substrate. The second liquid processing device is equipped with a second holder configured to hold the substrate. The second liquid processing device is configured to perform a plating processing on the substrate held by the second holder. The first liquid processing device is configured to perform at least a post-cleaning processing performed after the plating processing on the substrate held by the first holder.

A film forming method and a film forming apparatus of a metal plating film allowing suppressing damage of a porous film. A metal plating film on a surface of a metal substrate by solid substitution-type electroless plating method. The film forming method includes preparing the film forming apparatus that includes at least a bottom wall and a sidewall surrounding the bottom wall and that is provided with a housing space, the metal substrate disposed on the bottom surface inside the housing, the porous film disposed on the surface of the metal substrate, and an electroless plating solution housed in the housing space; and using the film forming apparatus, reducing metal ions derived from the electroless plating solution contained in the porous film, and depositing the metal ions on the surface of the metal substrate to form the metal plating film on the surface of the metal substrate.

A substrate W having a non-plateable material portion 31 and a plateable material portion 32 formed on a surface thereof is prepared, and then, a catalyst is selectively imparted to the plateable material portion 32 by performing a catalyst imparting processing on the substrate W. Thereafter, a plating layer 35 is selectively formed on the plateable material portion 32 by supplying a plating liquid M1 onto the substrate W. The plating liquid M1 contains an inhibitor which suppresses the plating layer 35 from being precipitated on the non-plateable material portion 31.

At least one plating pen is brought into aligned relationship with at least one hole defined in a board. The pen includes a central retractable protrusion, a first shell surrounding the protrusion and defining a first annular channel therewith, and a second shell surrounding the first shell and defining a second annular channel therewith. The protrusion is lowered to block the hole and plating material is flowed down the first channel to a surface of the board and up into the second channel, to form an initial deposit on the board surface. The protrusion is raised to unblock the hole, and plating material is flowed down the first annular channel to side walls of the hole and up into the second annular channel, to deposit the material on the side walls of the hole.

Systems and methods for electroless plating a first metal onto a second metal in a molten salt bath including: a bath vessel holding a dry salt mixture including a dry salt medium and a dry salt medium of the first metal, and without the reductant therein, the dry salt mixture configured to be heated to form a molten salt bath; and the second metal is configured to be disposed in the molten salt bath and receive a pure coating of the first metal thereon by electroless plating in the molten salt bath, wherein the second metal is more electronegative than the first metal.

A substrate liquid processing apparatus configured to perform a heating control over a processing liquid on a substrate with high accuracy in a unit of zones is provided. The substrate liquid processing apparatus includes a substrate holder configured to hold the substrate; a processing liquid supply configured to supply the processing liquid onto a processing surface of the substrate; and a heating unit configured to heat the processing liquid on the processing surface. The heating unit includes a heater, and a first sheet-shaped body and a second sheet-shaped body which are disposed to face the heater therebetween. The heater includes multiple heating elements provided in multiple heating zones of the heating unit.

A method of performing an immersion tin process in the production of a component carrier is provided which includes immersing at least a part of a copper surface of the component carrier in a composition containing Sn(II) in an immersion tin unit, while passing a non-oxidizing gas through the immersion tin unit, wherein at least part of the non-oxidizing gas is recycled. In addition, an apparatus for performing an immersion tin process in the production of a component carrier, a method of performing a copper plating process in the production of a component carrier and an apparatus for performing a copper plating process in the production of a component carrier are provided.

Systems and methods for electroless plating a first metal onto a second metal in a molten salt bath including: a bath vessel holding a dry salt mixture including a dry salt medium and a dry salt medium of the first metal, and without the reductant therein, the dry salt mixture configured to be heated to form a molten salt bath; and the second metal is configured to be disposed in the molten salt bath and receive a pure coating of the first metal thereon by electroless plating in the molten salt bath, wherein the second metal is more electronegative than the first metal.