A surface treatment device includes at least one paddle in a plate shape, in a surface treatment tank, for stirring a surface treatment solution near an object to be plated by reciprocally moving the paddle with respect to the object to be plated. The paddle is configured by integrally forming multiple square bars provided in a depth direction or a horizontal direction of the surface treatment solution at regular intervals along the object to be plated. A liquid draining member for draining a liquid is arranged in at least one side of an end of the paddle.

A method that forms a metal plating film having a thick film thickness by a solid phase method is provided. The present disclosure is a method that forms the metal plating films of a first metal and a second metal having an ionization tendency larger than an ionization tendency of the first metal. The method includes: depositing the second metal on a surface of a copper base material to form the plating film of the second metal; and depositing the first metal on a surface of the second metal by a solid electroless plating method to form the plating film of the first metal. The solid electroless plating method in the depositing of the first metal is performed using a laminated complex. The laminated complex includes a first substitution-type electroless plating bath, a solid electrolyte membrane, a copper base material, a third metal, a second substitution-type electroless plating bath, and an insulating polymer. The first substitution-type electroless plating bath contains ions of the first metal. The second metal is plated on the copper base material. The third metal has an ionization tendency larger than the ionization tendency of the first metal. The second substitution-type electroless plating bath contains ions of the first metal.

A system for coating an interior surface of a heat exchanger includes a tank for storing the coating solution, a pump, a source line for supplying the coating solution to the heat exchanger, and a return line for returning the remainder of the coating solution to the tank. The system can include a pre-treatment line for supplying a pre-treatment solution to the heat exchanger and a water line for supplying water to the heat exchanger. An air compressor can be coupled to the heat exchanger to force the coating solution, the pre-treatment solution, or the water from the heat exchanger.

A substrate processing method is provided for performing a plating processing on a substrate having, on a surface thereof, an impurity-doped polysilicon film containing a high concentration of impurities. The substrate processing method includes forming a catalyst layer by supplying, onto the substrate, an alkaline catalyst solution containing a complex of a palladium ion and a monocyclic 5- or 6-membered heterocyclic compound having one or two nitrogen atoms as a heteroatom; and forming a plating layer through electroless plating by supplying a plating liquid onto the substrate after the forming of the catalyst layer.

An apparatus is disclosed for applying a coating to a desired object including a rotatable container having at least one container wall. An electrolyte can be retained within the container, the at least one container wall made of a material that does not allow the electrolyte to pass through the at least one container wall of the container. An anode can be positioned within the container. The apparatus can include a mount for securing the desired object such that a surface of the desired object is exposed to the electrolyte. A controller can be in electrical communication with the anode and the mount, wherein when power is supplied from the controller to the anode and the mount, particles in the electrolyte are deposited on the desired object forming a composite coating.

A substrate processing apparatus includes a substrate holder configured to horizontally hold and rotate a substrate which has a recess and a base metal layer exposed from a bottom surface of the recess; and a pre-cleaning liquid supply configured to supply a pre-cleaning liquid such as dicarboxylic acid or tricarboxylic acid onto the substrate being held and rotated by the substrate holder, to thereby pre-clean the base metal layer. A temperature of the pre-cleaning liquid on the substrate is equal to or higher than 40 C.

This disclosure provides a method for forming a plating film capable of suppressing deterioration of a plating solution, and a film formation device. The embodiment is a method for forming a metal plating film on a metal substrate by a substitution-type electroless plating method. The method includes bringing a porous film containing an electroless plating solution into contact with a surface of the metal substrate, and the porous film has an anionic group.

Electrically conductive proppant and methods for energizing and detecting the electrically conductive proppant in a single wellbore are disclosed. The methods can include performing numerical simulations solving Maxwell's equations of electromagnetism for electric and/or magnetic fields to determine temporal characteristics of an optimum input wave form and a recording sensor location to be used in a wellbore that extends into a subterranean formation having a fracture that is at least partially filled with proppant and an electrically conductive material, wherein the numerical simulations are based upon an earth model determined from geophysical logs and/or geological information. The method can also include electrically energizing a casing of the wellbore, measuring three dimensional (x, y, and z) components of electric and/or magnetic field responses in the wellbore, and determining a location of the electrically conductive proppant through comparison of the electric and/or magnetic field responses to the numerical simulations.

A multilayer wiring forming method includes filling a via, which is formed in an insulating film including an oxide film formed on a wiring of a substrate and is extended to the wiring, by forming an electroless plating film, which does not diffuse into the oxide film, from a bottom surface of the via while using the wiring, which is exposed at the bottom surface of the via, as a catalyst.

A plating apparatus, a plating method and a recording medium can allow a temperature of a wafer to be uniform within a surface thereof. A plating apparatus 1 includes a substrate holding unit 52 configured to hold a substrate W; a plating liquid supply unit 53 configured to supply a plating liquid M1 to the substrate W; and a solvent supply unit 55a configured to supply a solvent N1 having a different temperature from a temperature of the plating liquid M1 to the substrate W. The solvent N1 is supplied to a preset position on the substrate W from the solvent supply unit 55a after the plating liquid M1 is supplied to the substrate W from the plating liquid supply unit 53.