An anisotropic conductive sheet has an insulation layer having a plurality of through-holes and a plurality of conductive layers each arranged on an inner wall surface of each of the plurality of through-holes. Each of the conductive layers has a base layer arranged on the inner wall surface of each of the through-holes and a metal plating layer arranged so as to contact with metal nanoparticles or a metal thin film in the base layer or the metal thin film. The base layer includes metal nanoparticles or a metal thin film and a binder, wherein at least a portion of the binder is arranged between the inner wall of each of the through-holes and the metal nanoparticles or the metal thin film. The binder is a sulfur-containing compound having a thiol group, a sulfide group or a disulfide group.

The present invention aims to provide resin particles that have excellent heat resistance and that, when used as base particles of conductive particles, are applicable to mounting by thermocompression bonding at low pressure to produce a connection structure having excellent connection reliability. The present invention also aims to provide conductive particles, a conductive material, and a connection structure each including the resin particles. Provided are resin particles having a 5% weight loss temperature of 350° C. or higher, a 10% K value at 25° C. of 100 N/mm.sup.2 or more and 2,500 N/mm.sup.2 or less, and a 30% K value at 25° C. of 100 N/mm.sup.2 or more and 1,500 N/mm.sup.2 or less.

The present invention aims to provide resin particles that have excellent heat resistance and that, when used as base particles of conductive particles, are applicable to mounting by thermocompression bonding at low pressure to produce a connection structure having excellent connection reliability. The present invention also aims to provide conductive particles, a conductive material, and a connection structure each including the resin particles. Provided are resin particles having a 5% weight loss temperature of 350° C. or higher, a 10% K value at 25° C. of 100 N/mm.sup.2 or more and 2,500 N/mm.sup.2 or less, and a 30% K value at 25° C. of 100 N/mm.sup.2 or more and 1,500 N/mm.sup.2 or less.

Provided is a molded circuit component 300 in which a metal layer 200 is formed with high adhesion by giving a degree of freedom to a base material 100. In the molded circuit component 300 in which the metal layer 200 is formed in a processing region 110 in the base material 100, a plurality of recesses 120 each having a plurality of holes 130 are continuously formed in the processing region 110, the processing region 110 has a ratio of a width to a maximum depth with respect to a surface of the base material 100 of 10:1 to 6:1, the processing region 110 is formed to have a width in a range of 20 μm to 200 μm, and formed to have a maximum depth with respect to the surface of the base material 100 in a range of 2 μm to 30 μm, the metal layer 200 can be formed in the processing region 110 by laminating using a plating method, and a catalyst that reacts with a metal that forms the metal layer 200 at the time of the lamination is attached to the holes 130 and the recesses 120.

Described herein is a chamber component including a metal layer comprising nickel and a barrier layer of nickel oxide over the metal layer. The barrier layer of nickel oxide may be formed by treating the chamber component with an oxidizing agent comprising hydrofluoric acid and/or nitric acid

Described herein is a chamber component including a metal layer comprising nickel and a barrier layer of nickel oxide over the metal layer. The barrier layer of nickel oxide may be formed by treating the chamber component with an oxidizing agent comprising hydrofluoric acid and/or nitric acid

A method for forming a metal film includes forming an oxide layer on a to-be-treated surface of a to-be-treated object by bringing the to-be-treated surface into contact with a reaction solution containing fluorine and an oxide precursor, removing fluorine in the oxide layer, supporting a catalyst on the oxide layer by bringing the oxide layer into contact with a catalyst solution, and depositing a metal film on the oxide layer by bringing the oxide layer into contact with an electroless plating liquid.

The present invention aims to provide a metal displacement solution that can provide good adhesion to a plating film (metal film), and a method for surface treatment of aluminum or an aluminum alloy using the metal displacement solution. Included is a metal displacement solution which contains a zinc compound, a nickel compound, a germanium compound, and a fluorine compound.

The present invention aims to provide a metal displacement solution that can provide good adhesion to a plating film (metal film), and a method for surface treatment of aluminum or an aluminum alloy using the metal displacement solution. Included is a metal displacement solution which contains a zinc compound, a nickel compound, a germanium compound, and a fluorine compound.

The processing system (1) is provided with an etching tank (2) and a circulation pipe (7) that exits from the bottom portion of the etching tank (2) and returns to the etching tank (2). The circulation pipe (7) is provided with a liquid feed pump (8), a heat exchanger (9), a sulfuric acid concentration meter (10), and an oxidant concentration meter (11). The sulfuric acid concentration meter (10) and the oxidant concentration meter (11) can transmit measurement results to a calculation/control device (12). The etching tank (2) can be replenished with hydrogen peroxide water, sulfuric acid, and pure water through a hydrogen peroxide water supply line (13), a sulfuric acid supply line (14), and a pure water supply line (15). The calculation/control device (12) can adjust the supply amounts of hydrogen peroxide water, sulfuric acid, and pure water to respective desired amounts. Such a processing system enables etching of a resin molded article while maintaining both the sulfuric acid concentration and the oxidant concentration of a sulfuric acid solution that is free from hexavalent chromic acid or permanganic acid and contains an oxidizing substance obtained by mixing sulfuric acid and hydrogen peroxide water.