A sheet material includes a resin layer containing a binder and catalyst particles, an electroless plating film on the side of one main surface of the resin layer and including first electroless plating films and a second electroless plating film, and a base material on the side of the other main surface of the resin layer.

A sheet material includes a resin layer containing a binder and catalyst particles, an electroless plating film on the side of one main surface of the resin layer and including first electroless plating films and a second electroless plating film, and a base material on the side of the other main surface of the resin layer.

Provided is a method for manufacturing a semiconductor device that improves the reliability of the semiconductor device under thermal stress and the assembly performance of the semiconductor device in manufacturing steps. The method includes the following: forming a first electrode by depositing a first conductive film onto one main surface of a semiconductor substrate and patterning the first conductive film; forming a first metal film corresponding to a pattern of the first electrode onto the first electrode; forming a second electrode by depositing a second conductive film onto the other main surface of the semiconductor substrate; forming a second metal film thinner than the first metal film onto the second electrode; and collectively forming a third metal film onto each of the first metal film and the second metal film by electroless plating.

Provided is a method for manufacturing a semiconductor device that improves the reliability of the semiconductor device under thermal stress and the assembly performance of the semiconductor device in manufacturing steps. The method includes the following: forming a first electrode by depositing a first conductive film onto one main surface of a semiconductor substrate and patterning the first conductive film; forming a first metal film corresponding to a pattern of the first electrode onto the first electrode; forming a second electrode by depositing a second conductive film onto the other main surface of the semiconductor substrate; forming a second metal film thinner than the first metal film onto the second electrode; and collectively forming a third metal film onto each of the first metal film and the second metal film by electroless plating.

A heat dissipation substrate having the maximum value of the coefficient of linear expansion of 10 ppm/K or less in any direction in a plane parallel to the surface within a temperature range from room temperature to 800° C. as well as a thermal conductivity of 250 W/m.Math.K or higher at 200° C. is produced by densifying an alloy composite of CuMo or CuW composed of Cu and coarse powder of Mo or W and subsequently cross-rolling the same alloy composite.

A heat dissipation substrate having the maximum value of the coefficient of linear expansion of 10 ppm/K or less in any direction in a plane parallel to the surface within a temperature range from room temperature to 800° C. as well as a thermal conductivity of 250 W/m.Math.K or higher at 200° C. is produced by densifying an alloy composite of CuMo or CuW composed of Cu and coarse powder of Mo or W and subsequently cross-rolling the same alloy composite.

Method for producing an object by additively manufacturing a preform of the object from a building material comprising a polymer. The preform is encapsulated with a metal or metal alloy encapsulant that is capable of withstanding temperatures greater than the preform. The encapsulated preform is heated at a predetermined temperature and for a period of time, such that the preform at least partially transmutes into the form of a carbonaceous solid.

Method for producing an object by additively manufacturing a preform of the object from a building material comprising a polymer. The preform is encapsulated with a metal or metal alloy encapsulant that is capable of withstanding temperatures greater than the preform. The encapsulated preform is heated at a predetermined temperature and for a period of time, such that the preform at least partially transmutes into the form of a carbonaceous solid.

A plating-pattern plate is configured to transfer, to a substrate, a transfer pattern formed by plating. The plating-pattern plate includes a base body and transfer parts disposed on the base body. Each of the transfer parts has a transfer surface configured to have the transfer pattern to be formed on the transfer surface by plating. The transfer parts are disposed electrically independent of one another on the base body. The plating-pattern plate provides a fine conductive pattern with stable quality.

A plating-pattern plate is configured to transfer, to a substrate, a transfer pattern formed by plating. The plating-pattern plate includes a base body and transfer parts disposed on the base body. Each of the transfer parts has a transfer surface configured to have the transfer pattern to be formed on the transfer surface by plating. The transfer parts are disposed electrically independent of one another on the base body. The plating-pattern plate provides a fine conductive pattern with stable quality.