Patent classifications
C23C18/42
Method for making composite structure with porous metal
A method for making composite structure with porous metal comprising: S20, providing a substrate; S30, fixing a porous metal structure on the substrate to obtain a first middle structure; S40, fixing at least one carbon nanotube structure on the porous metal structure in the first middle structure to obtain a second middle structure; and S50, shrinking the second middle structure to form a composite structure with porous metal.
Chemical evaporation Control System
An apparatus is provided. The apparatus may include one or more of a container, a first magnet assembly, and a second magnet assembly. The container includes an open top and is configured to hold a liquid chemical solution. The first magnet assembly includes a first magnet having a first polarity and a cover, coupled to the first magnet. The cover is configured to be movable between an open and a closed position and limit evaporation of the solution when the cover is in the closed position. The second magnet assembly includes a second magnet having a second polarity. In response to a command, the second magnet assembly is configured to move the cover to the open position without direct contact to the first magnet assembly in response to a command.
Chemical evaporation Control System
An apparatus is provided. The apparatus may include one or more of a container, a first magnet assembly, and a second magnet assembly. The container includes an open top and is configured to hold a liquid chemical solution. The first magnet assembly includes a first magnet having a first polarity and a cover, coupled to the first magnet. The cover is configured to be movable between an open and a closed position and limit evaporation of the solution when the cover is in the closed position. The second magnet assembly includes a second magnet having a second polarity. In response to a command, the second magnet assembly is configured to move the cover to the open position without direct contact to the first magnet assembly in response to a command.
Hexagonal boron nitride structures
A microstructure comprises a plurality of interconnected units wherein the units are formed of hexagonal boron nitride (h-BN) tubes. The graphene tubes may be formed by photo-initiating the polymerization of a monomer in a pattern of interconnected units to form a polymer microlattice, removing unpolymerized monomer, coating the polymer microlattice with a metal, removing the polymer microlattice to leave a metal microlattice, depositing an h-BN precursor on the metal microlattice, converting the h-BN precursor to h-BN, and removing the metal microlattice.
Chemical vapor deposition processes using ruthenium precursor and reducing gas
Chemical vapor deposition (CVD) processes which use a ruthenium precursor of formula R.sup.1R.sup.2Ru(0), wherein R.sup.1 is an aryl group-containing ligand, and R.sup.2 is a diene group-containing ligand and a reducing gas a described. The CVD can include oxygen after an initial deposition period using the ruthenium precursor and reducing gas. The method can provide selective Ru deposition on conductive materials while minimizing deposition on non-conductive or less conductive materials. Further, the subsequent use of oxygen can significantly improve deposition rate while minimizing or eliminating oxidative damage of the substrate material. The method can be used to form Ru-containing layers on integrated circuits and other microelectronic devices.
Chemical vapor deposition processes using ruthenium precursor and reducing gas
Chemical vapor deposition (CVD) processes which use a ruthenium precursor of formula R.sup.1R.sup.2Ru(0), wherein R.sup.1 is an aryl group-containing ligand, and R.sup.2 is a diene group-containing ligand and a reducing gas a described. The CVD can include oxygen after an initial deposition period using the ruthenium precursor and reducing gas. The method can provide selective Ru deposition on conductive materials while minimizing deposition on non-conductive or less conductive materials. Further, the subsequent use of oxygen can significantly improve deposition rate while minimizing or eliminating oxidative damage of the substrate material. The method can be used to form Ru-containing layers on integrated circuits and other microelectronic devices.
ELECTROLESS PLATING UNDERCOAT FILM
An electroless plating undercoat film comprising (A) a conductive polymer and further comprising (B) a reactant of a polyol resin having an acid value and a polyisocyanate compound, wherein the acid value is 0.1 mgKOH/g to 30 mgKOH/g.
ELECTROLESS PLATING UNDERCOAT FILM
An electroless plating undercoat film comprising (A) a conductive polymer and further comprising (B) a reactant of a polyol resin having an acid value and a polyisocyanate compound, wherein the acid value is 0.1 mgKOH/g to 30 mgKOH/g.
Adhesion between polymer substrates and autocatalytic plates
Provided is a method and apparatus for improving adhesion between a polymer article and a metal plate. The method includes providing a polymer article, and hydrolyzing a surface of the polymer article using an acidic solution to obtain carboxylic acid groups at the surface. The method also includes grafting polyphenols to the carboxylic acid groups by esterification that is catalyzed by the acidic solution, and chelating metal ions to the grafted polyphenols to form polyphenol-metal complexes. The apparatus includes a body formed by additive manufacturing, and a metal plating formed on a surface of the body by electroless metal plating after a surface preparation process. The surface preparation process includes treating the surface with an acidic solution to obtain carboxylic acid groups at the surface, treating the surface with a polyphenol solution to obtain polyphenols grafted to the carboxylic acid groups, and chelating metal ions to the polyphenols.
ADHESION PROMOTING LAYER, METHOD FOR DEPOSITING CONDUCTIVE LAYER ON INORGANIC OR ORGANIC-INORGANIC HYBRID SUBSTRATE, AND CONDUCTIVE STRUCTURE
Provided are an adhesion promoting layer, a method for depositing a conductive layer on an inorganic or organic-inorganic hybrid substrate and a conductive structure. The adhesion promoting layer is suitable for depositing a conductive layer on an inorganic or organic-inorganic hybrid substrate, which includes a metal oxide layer and an interface layer. The metal oxide layer is disposed on the inorganic or organic-inorganic hybrid substrate. The interface layer is disposed between the metal oxide layer and the inorganic or organic-inorganic hybrid substrate. The metal oxide layer includes metal oxide and a chelating agent. The interface layer includes the metal oxide, the chelating agent and metal-nonmetal-oxide composite material.