Provided is a semiconductor element including: a front-back conduction-type substrate including a front-side electrode and a back-side electrode; and an electroless plating layer formed on at least one of the electrodes of the front-back conduction-type substrate. The electroless plating layer includes: an electroless nickel-phosphorus plating layer; and an electroless gold plating layer formed on the electroless nickel-phosphorus plating layer, and has a plurality of recesses formed on a surface thereof to be joined with solder.

Provided is a semiconductor element including: a front-back conduction-type substrate including a front-side electrode and a back-side electrode; and an electroless plating layer formed on at least one of the electrodes of the front-back conduction-type substrate. The electroless plating layer includes: an electroless nickel-phosphorus plating layer; and an electroless gold plating layer formed on the electroless nickel-phosphorus plating layer, and has a plurality of recesses formed on a surface thereof to be joined with solder.

An object of the present invention is to provide a new electroless plating film which can prevent the diffusion of molten solder to a metal material constituting a conductor. The present invention is an electroless Co—W plating film, wherein content of W is in an amount of 35 to 58 mass % and a thickness of the film is 0.05 μm or more.

An object of the present invention is to provide a new electroless plating film which can prevent the diffusion of molten solder to a metal material constituting a conductor. The present invention is an electroless Co—W plating film, wherein content of W is in an amount of 35 to 58 mass % and a thickness of the film is 0.05 μm or more.

A method for manufacturing a surge absorbing device is provided. The method includes providing an elongate ceramic tube having a hollow space defined therein and having open and opposite first and second end; forming a first plating layer and a second plating layer on the first end and the second end, respectively; placing a surge absorbing element within the hollow space within the ceramic tube; disposing first and second brazing rings on the first plating layer and the second plating layer, respectively; disposing first and second sealing electrodes on the first and second brazing rings respectively; and melting the first and second brazing rings in an inert gas atmosphere to attach the first and second sealing electrodes onto the first plating layer and the second plating layer, respectively.

A method for manufacturing a surge absorbing device is provided. The method includes providing an elongate ceramic tube having a hollow space defined therein and having open and opposite first and second end; forming a first plating layer and a second plating layer on the first end and the second end, respectively; placing a surge absorbing element within the hollow space within the ceramic tube; disposing first and second brazing rings on the first plating layer and the second plating layer, respectively; disposing first and second sealing electrodes on the first and second brazing rings respectively; and melting the first and second brazing rings in an inert gas atmosphere to attach the first and second sealing electrodes onto the first plating layer and the second plating layer, respectively.

A method of forming an etched part includes forming a substrate including a thermoset resin and etching a surface of the substrate. The thermoset resin includes a vat photopolymerization (VPP) thermoset resin and at least one of an etchable phase and etchable particles disposed within the VPP thermoset resin. The etching removes the etchable phase from the VPP thermoset resin at the surface of the substrate such that a plurality of micro-mechanical bonding sites are formed on an etched surface of the substrate.

A method of forming an etched part includes forming a substrate including a thermoset resin and etching a surface of the substrate. The thermoset resin includes a vat photopolymerization (VPP) thermoset resin and at least one of an etchable phase and etchable particles disposed within the VPP thermoset resin. The etching removes the etchable phase from the VPP thermoset resin at the surface of the substrate such that a plurality of micro-mechanical bonding sites are formed on an etched surface of the substrate.

The invention provides, in some aspects, methods for fabricating an electrode comprising a nickel/molybdenum (NiMo) hydrogen evolution reaction catalyst on a carbon support, e.g., for use as a cathode in an electrolyzer. A catalyst of the type described above can be prepared by co-precipitation of nickel and molybdenum oxide species on the carbon support followed by its reduction through heat treatment in the presence of nitrogen. Such a catalyst can alternatively be prepared through the thermal degradation of metal-organic complexes of nickel and molybdenum in the presence of the carbon support. Further aspects of the invention comprise a cathode, e.g., for an anion exchange membrane electrolyzer, comprising a nickel/molybdenum hydrogen evolution reaction catalyst as described above. Still further aspects of the invention comprise an anion exchange membrane electrolyzer with a cathode as described above.

The invention provides, in some aspects, methods for fabricating an electrode comprising a nickel/molybdenum (NiMo) hydrogen evolution reaction catalyst on a carbon support, e.g., for use as a cathode in an electrolyzer. A catalyst of the type described above can be prepared by co-precipitation of nickel and molybdenum oxide species on the carbon support followed by its reduction through heat treatment in the presence of nitrogen. Such a catalyst can alternatively be prepared through the thermal degradation of metal-organic complexes of nickel and molybdenum in the presence of the carbon support. Further aspects of the invention comprise a cathode, e.g., for an anion exchange membrane electrolyzer, comprising a nickel/molybdenum hydrogen evolution reaction catalyst as described above. Still further aspects of the invention comprise an anion exchange membrane electrolyzer with a cathode as described above.