A method for manufacturing structured press elements comprises at least the following steps: the step of providing an element of metal; the step of providing a mask on a surface of the element for shielding portions of the surface; the step of treating non-shielded portions of the surface of the element; the step of removing the mask; wherein the method comprises at least a step in which the surface of the element is subjected to an ultrasonic treatment and/or that the step of providing the mask comprises at least a treatment with infrared radiation and/or that the step of chemically treating is performed with the surface directed downward.

An apparatus and a process for removing a support structure from a 3D printed part, where the 3D printed part along with the support structure is placed in an acid solution and the part is surrounded by an induction heater. The acid solution is recirculated through the acid tank to prevent the acid solution from heating up too much. Small surfaces of the part are heated up by the induction heater before larger pieces are heated so that the acid will remove the smaller pieces first. After enough time, all of the support structure is removed by the acid and the heater to leave the finished 3D printed part with the support structure removed.

Disclosed is a method of making a conductive material or active material that includes graphene or other 2-D materials. The method includes obtaining a layered stack. The layered stack including one or more conductive materials or 2-D materials separated by a metal layer, and one or more substrate materials. The stack can be subjected to a metal removal process to obtain two conductive or active materials. A first conductive or active material can include a first substrate layer attached to the first active layer. The second conductive or active material can include a second substrate layer attached to the second active layer. The first and second active layers can be conductive graphene layers.

Disclosed is a method of making a conductive material or active material that includes graphene or other 2-D materials. The method includes obtaining a layered stack. The layered stack including one or more conductive materials or 2-D materials separated by a metal layer, and one or more substrate materials. The stack can be subjected to a metal removal process to obtain two conductive or active materials. A first conductive or active material can include a first substrate layer attached to the first active layer. The second conductive or active material can include a second substrate layer attached to the second active layer. The first and second active layers can be conductive graphene layers.

An etchant composition is disclosed that provides selective etching of an indium oxide film or a sliver-containing metal layer. The etchant composition includes nitric acid, an organic acid, a sulfur compound, and a tin compound. The organic acid does not include the elements of sulfur and tin. The sulfur compound does not include the element of tin. The etchant composition may minimize the damage of a lower metal film and may exhibit excellent etching characteristics in terms of etching rate, bias, residue, precipitation, and etching uniformity.

An etchant composition is disclosed that provides selective etching of an indium oxide film or a sliver-containing metal layer. The etchant composition includes nitric acid, an organic acid, a sulfur compound, and a tin compound. The organic acid does not include the elements of sulfur and tin. The sulfur compound does not include the element of tin. The etchant composition may minimize the damage of a lower metal film and may exhibit excellent etching characteristics in terms of etching rate, bias, residue, precipitation, and etching uniformity.

A method of etching an electrically conductive layer structure during manufacturing a component carrier is provided. The method includes carrying out a first etching of at least one exposed region of an electrically conductive layer structure by a first etching composition having a photo-hardenable compound to thereby form a recess in the electrically conductive layer structure, hardening the photo-hardenable compound by irradiation with photons selectively on an upper side wall portion of the recess to thereby cover the upper side wall portion with a photo-hardened compound, carrying out a second etching by a second etching composition selectively on a side wall portion and/or bottom portion of the recess being not covered with the photo-hardened compound, and subsequently removing the photo-hardened compound from the side wall portion. In addition, a component carrier is provided.

A method of etching an electrically conductive layer structure during manufacturing a component carrier is provided. The method includes carrying out a first etching of at least one exposed region of an electrically conductive layer structure by a first etching composition having a photo-hardenable compound to thereby form a recess in the electrically conductive layer structure, hardening the photo-hardenable compound by irradiation with photons selectively on an upper side wall portion of the recess to thereby cover the upper side wall portion with a photo-hardened compound, carrying out a second etching by a second etching composition selectively on a side wall portion and/or bottom portion of the recess being not covered with the photo-hardened compound, and subsequently removing the photo-hardened compound from the side wall portion. In addition, a component carrier is provided.

Provided are a method for etching a metal or metal oxide without using a reagent, etc., that affects the environment, a method for smoothing a surface of a metal or metal oxide on an atomic level, and a method for patterning on an atomic level. Etching of a metal or metal oxide, or smoothing of a surface of a metal or metal oxide is possible using ozone water in which only ozone is dissolved. Patterning can also be performed by providing a metal that does not dissolve in the ozone water as a resist on a metal or metal oxide that can be etched by ozone water in which only ozone is dissolved, and etching using the ozone water.

Provided are a method for etching a metal or metal oxide without using a reagent, etc., that affects the environment, a method for smoothing a surface of a metal or metal oxide on an atomic level, and a method for patterning on an atomic level. Etching of a metal or metal oxide, or smoothing of a surface of a metal or metal oxide is possible using ozone water in which only ozone is dissolved. Patterning can also be performed by providing a metal that does not dissolve in the ozone water as a resist on a metal or metal oxide that can be etched by ozone water in which only ozone is dissolved, and etching using the ozone water.