The invention is an aqueous composition useful for chemical mechanical polishing of a patterned semiconductor wafer containing a copper interconnect metal. The aqueous composition includes an oxidizer, an inhibitor for the copper interconnect metal, 0.001 to 15 weight percent of a water soluble modified cellulose, non-saccaride water soluble polymer, 0 to 15 complexing agent for the copper interconnect metal, 0 to 15 weight percent phosphorus compound, 0.05 to 20 weight percent of an acid compound that is capable of complexing copper ions, and water; and the solution has an acidic pH.

The present invention relates to a method for preserving a mark on a metallic workpiece prior to a chemical etching process to remove a surface material from a surface of the workpiece carrying the mark, the method comprising the steps of: deepening the mark relative to the surface to form a first depth; and depositing a filling material into the first depth, wherein the filling material is adapted to be removed during the chemical process, such that a second depth is obtained at the mark after the chemical process. The present invention also relates to a method of treating a metallic workpiece to preserve a mark on the surface of the workpiece, the method comprising the step of treating at least a portion of the surface of the workpiece surrounding the mark to remove at least a surface oxide layer from the mark, the treating step being arranged such that it does not remove all of the surface material from said portion of the surface of the workpiece, but removes at least the surface oxide layer from the mark.

The present invention relates to a method for preserving a mark on a metallic workpiece prior to a chemical etching process to remove a surface material from a surface of the workpiece carrying the mark, the method comprising the steps of: deepening the mark relative to the surface to form a first depth; and depositing a filling material into the first depth, wherein the filling material is adapted to be removed during the chemical process, such that a second depth is obtained at the mark after the chemical process. The present invention also relates to a method of treating a metallic workpiece to preserve a mark on the surface of the workpiece, the method comprising the step of treating at least a portion of the surface of the workpiece surrounding the mark to remove at least a surface oxide layer from the mark, the treating step being arranged such that it does not remove all of the surface material from said portion of the surface of the workpiece, but removes at least the surface oxide layer from the mark.

The invention relates to a method of etching a portion of a metal layer of a microstructure comprised of the metal layer disposed on a transparent conducting oxide (TCO) layer, and in particular, to selectively etching the portion of the metal layer and not the TCO layer.

The invention relates to a method of etching a portion of a metal layer of a microstructure comprised of the metal layer disposed on a transparent conducting oxide (TCO) layer, and in particular, to selectively etching the portion of the metal layer and not the TCO layer.

A packaging method and a packaging body are provided. The packaging method includes: obtaining a mounting plate defining multiple mounting holes; disposing a target device in each of the multiple mounting holes; performing plastic sealing on the multiple mounting holes to form packaging bodies, and each of the packaging bodies wrapping the target device; and performing chemical etching on the mounting plate until each of the packaging bodies is separated from each other, and obtaining multiple independent packaging bodies. In this way, appearance quality is ensured, separation efficiency of the large plate is improved, freedom of batch separation of the packaging bodies is improved, and more possibilities for the shape of each of the packaging bodies are provided.

A packaging method and a packaging body are provided. The packaging method includes: obtaining a mounting plate defining multiple mounting holes; disposing a target device in each of the multiple mounting holes; performing plastic sealing on the multiple mounting holes to form packaging bodies, and each of the packaging bodies wrapping the target device; and performing chemical etching on the mounting plate until each of the packaging bodies is separated from each other, and obtaining multiple independent packaging bodies. In this way, appearance quality is ensured, separation efficiency of the large plate is improved, freedom of batch separation of the packaging bodies is improved, and more possibilities for the shape of each of the packaging bodies are provided.

A method of transferring a graphene layer onto a target substrate or support structure. The method includes obtaining a metal foil onto which the graphene layer is provided, stabilizing the graphene layer by applying a layer of a cellulose-based polymer onto the graphene layer, and placing the metal foil with the graphene and the polymer layers in or on an etching solution to dissolve the metal foil supporting the graphene layer. The method includes diluting and/or neutralizing the etching solution after the metal foil has been dissolved, and depositing the graphene layer onto the target by placing the target underneath the graphene layer and removing the diluted and/or neutralized solution until the graphene layer settles onto the target. The method includes a dry cleaning of the target to remove the polymer layer by embedding the target in activated carbon and heating.

An etching composition may include an oxidizing agent, an accelerator, an ammonium salt, and an aqueous solvent, wherein the accelerator may include one or more compounds represented by Formula 1, and the ammonium salt may include at least one compound having a structure in which at least one of hydrogen ions (H.sup.+) of a hydroxyl group (*OH) or a thiol group (*SH) included in the accelerator is substituted with an ammonium cation (NH.sub.4.sup.+):

##STR00001##

Formula 1 is as described in the present specification.

An etching composition may include an oxidizing agent, an accelerator, an ammonium salt, and an aqueous solvent, wherein the accelerator may include one or more compounds represented by Formula 1, and the ammonium salt may include at least one compound having a structure in which at least one of hydrogen ions (H.sup.+) of a hydroxyl group (*OH) or a thiol group (*SH) included in the accelerator is substituted with an ammonium cation (NH.sub.4.sup.+):

##STR00001##

Formula 1 is as described in the present specification.