A substrate processing apparatus includes a substrate holder configured to horizontally hold and rotate a substrate which has a recess and a base metal layer exposed from a bottom surface of the recess; and a pre-cleaning liquid supply configured to supply a pre-cleaning liquid such as dicarboxylic acid or tricarboxylic acid onto the substrate being held and rotated by the substrate holder, to thereby pre-clean the base metal layer. A temperature of the pre-cleaning liquid on the substrate is equal to or higher than 40 C.

The coating film-forming composition includes an aromatic compound having an amino group and an aromatic ring in one molecule, and thio compound (sulfur oxoacids having a pKa of 1.9 or less and salts thereof are excluded). pH of the coating film-forming composition is 4 to 10. The thio compound is preferably one that ionized to form anions in a solution, and thiosulfate and thiocyanate are especially preferable. By bringing the coating film-forming composition into contact with the surface of a metal member, a coating film is formed on the surface of the metal member, so that a surface-treated metal member can be obtained.

A surface treatment agent capable of forming a hexavalent chromium-free chemical conversion coating that can provide an excellent corrosion-resistant coating on various metallic materials; a metallic material having a surface treatment coating obtained therefrom; and a method of producing the same. A free fluorine ion-containing surface treatment agent for surface-treating a metallic material, which is obtained by mixing at least one supply source (A) of trivalent chromium-containing ions A; a supply source (B) of ions B that are at least one selected from titanium-containing ions and zirconium-containing ions; a water-soluble or water-dispersible compound (C) containing an alkoxysilyl group, an aromatic ring, a hydroxy group directly bonded to the aromatic ring, and at least one of primary, secondary, tertiary and quaternary amino groups, wherein the alkoxysilyl group is bonded to the nitrogen atom of the amino group directly or via an alkylene group; and a fluorine-containing compound (D) providing fluorine-containing ions.

The present disclosure provides a new wet atomic layer etch (ALE) process for etching copper. More specifically, the present disclosure provides various embodiments of methods that utilize new etch chemistries for etching copper in a wet ALE process. By utilizing the new etch chemistries disclosed herein within a wet ALE process, the present disclosure provides a highly selective etch of copper with monolayer precision.

Methods, systems and apparatuses are disclosed for treating aluminum desmutting solutions by reacting, mixing and filtering an aluminum desmutting solution flow from an aluminum desmutting solution tank and controlling the amount of copper ions in an aluminum desmutting solution tank by directing a portion of the desmutting solution from a desmutting solution tank to a treatment line, reacting a portion of the desmutting solution in the treatment line and recirculating a filtered aluminum desmutting solution to the aluminum desmutting solution tank during active desmutting operation of the aluminum desmutting solution tank.

A method for manufacturing the circuit board comprises following steps of forming a silver layer on each of two opposite surfaces of an insulating substrate, and forming a copper layer on each silver layer, thereby obtaining a middle structure; defining at least one through-hole on the middle structure, and each through-hole extending through each copper layer; forming a copper wiring layer on the copper layers to cover each through-hole and a portion region of the copper layers, the copper wiring layer comprising a copper conductive structure passing through each through-hole, the copper conductive structure connecting the copper layers; removing the copper layers not covered by the copper wiring layer; and etching the silver layers to form a silver wiring layer corresponding to the copper wiring layer, wherein a first etching liquid, which does not etch the copper wiring layer, is used for etching the silver layers.

An anticorrosion treatment method for a copper-containing material comprises: carrying out a sealed and pressurized reaction on a copper-containing material and a stabilizer in presence of a polar solvent and any assistant, the stabilizer being a compound capable of providing formates, so that the formates are adsorbed on the surface of the copper-containing material. In the method, formates are modified on the surface of the copper-containing material, accordingly, the oxidation resistance capability and the stability of the copper-containing material can be significantly improved while the electrical conductivity of the copper-containing material is not reduced, and the corrosion resistance of the copper-containing material and especially, the salt and alkali corrosion resistance of the copper-containing material are significantly improved.

The coating film-forming composition includes an aromatic compound having an amino group and an aromatic ring in one molecule, and thio compound (sulfur oxoacids having a pKa of 1.9 or less and salts thereof are excluded). pH of the coating film-forming composition is 4 to 10. The thio compound is preferably one that ionized to form anions in a solution, and thiosulfate and thiocyanate are especially preferable. By bringing the coating film-forming composition into contact with the surface of a metal member, a coating film is formed on the surface of the metal member, so that a surface-treated metal member can be obtained.

A method for manufacturing the circuit board comprises following steps of providing an insulating substrate, and defining at least one through-hole on the insulating substrate to extending through two opposite surfaces of the insulating substrate; forming a silver layer on each of the two opposite surfaces, and forming a silver conductive structure in each through-hole connecting the silver layers; forming a copper wiring layer on the silver layers to cover each silver conductive structure and a portion region of the silver layers; and etching the silver layers to form a silver wiring layer corresponding to the copper wiring layer, wherein a first etching liquid, which does not etch the copper wiring layer, is used for etching the silver layers.

Cleaning solution for cleaning and/or wetting metal surfaces, comprising at least one acid, a first surfactant, which is an alkyl-poly(ethyleneglycol-co-propyleneglycol)-ether having a cloud point of 25 C., a second surfactant, which is selected from the group consisting of i) an alkyl-poly(ethyleneglycol-co-propyleneglycol)-ether having a cloud point of 30 C., ii) an alkyl-polyethyleneglycol-ether having a cloud point of 45 C.
wherein the cloud points are determined according to European Standard EN 1890:2006, item 8.2 of German Version, with the modification that 10 wt % H.sub.2SO.sub.4 is used as solvent and that the concentration of the surfactant is 1000 mg/L.