This disclosure relates to a cleaning composition that contains 1) at least one redox agent; 2) at least one first chelating agent, the first chelating agent being a polyaminopolycarboxylic acid; 3) at least one metal corrosion inhibitor, the metal corrosion inhibitor being a substituted or unsubstituted benzotriazole; 4) at least one pH adjusting agent, the pH adjusting agent being a base free of a metal ion; and 5) water. This disclosure also relates to a method of using the above composition for cleaning a semiconductor substrate.

The present invention discloses a method and a composition for removing metal sulfide scale present on the surface of a metal, said method comprising: providing a liquid composition comprising: a chelating agent and a counterion component selected from the group consisting of: sodium gluconate; gluconic acid; tetrasodium EDTA; EDTA; propylenediaminetetraacetic acid (PDTA); nitrilotriacetic acid (NTA); N-(2-hydroxyethyl) ethylenediaminetriacetic acid (HEDTA); diethylenetriaminepentaacetic acid (DTPA); hydroxyethyliminodiacetic acid (HEIDA); cyclohexylenediaminetetraacetic acid (CDTA); diphenylaminesulfonic acid (DPAS); ethylenediaminedi(o-hydroxyphenylacetic) acid (EDDHA); glucoheptonic acid; gluconic acid; oxalic acid; malonic acid; succinic acid; glutaric acid; adipic acid; pimelic acid; suberic acid; azelaic acid; sebacic acid; phthalic acid; terephthalic acid; aconitic acid; carballylic acid; trimesic acid; isocitric acid; citric acid; L-glutamic acid-N,N-diacetic acid (GLDA); salts thereof; and mixtures thereof; and an aldehyde; and water exposing a surface contaminated with said metal sulfide scale to the liquid composition; allowing sufficient time of exposure to remove said metal sulfide scale from the contaminated surface and sequestration of the sulfur ions from solution.

The present invention discloses a method and a composition for removing metal sulfide scale present on the surface of a metal, said method comprising: providing a liquid composition comprising: a chelating agent and a counterion component selected from the group consisting of: sodium gluconate; gluconic acid; tetrasodium EDTA; EDTA; propylenediaminetetraacetic acid (PDTA); nitrilotriacetic acid (NTA); N-(2-hydroxyethyl) ethylenediaminetriacetic acid (HEDTA); diethylenetriaminepentaacetic acid (DTPA); hydroxyethyliminodiacetic acid (HEIDA); cyclohexylenediaminetetraacetic acid (CDTA); diphenylaminesulfonic acid (DPAS); ethylenediaminedi(o-hydroxyphenylacetic) acid (EDDHA); glucoheptonic acid; gluconic acid; oxalic acid; malonic acid; succinic acid; glutaric acid; adipic acid; pimelic acid; suberic acid; azelaic acid; sebacic acid; phthalic acid; terephthalic acid; aconitic acid; carballylic acid; trimesic acid; isocitric acid; citric acid; L-glutamic acid-N,N-diacetic acid (GLDA); salts thereof; and mixtures thereof; and an aldehyde; and water exposing a surface contaminated with said metal sulfide scale to the liquid composition; allowing sufficient time of exposure to remove said metal sulfide scale from the contaminated surface and sequestration of the sulfur ions from solution.

This disclosure relates to a cleaning composition that contains 1) hydroxylamine; 2) a chelating agent; 3) an alkylene glycol; 4) water. This disclosure also relates to a method of using the above composition for cleaning a semiconductor substrate.

This disclosure relates to a cleaning composition that contains 1) hydroxylamine; 2) a chelating agent; 3) an alkylene glycol; 4) water. This disclosure also relates to a method of using the above composition for cleaning a semiconductor substrate.

This disclosure relates to a cleaning composition that contains 1) hydroxylamine; 2) alkanolamine; 3) an alkylene glycol; 4) water. This disclosure also relates to a method of using the above composition for cleaning a semiconductor substrate.

The invention relates to the field of removing various types of deposits from a surface, specifically to means for cleaning metallic and ceramic surfaces of industrial equipment, and can be used for removing deposits, such as oxides of metals (iron, chromium, nickel, etc.), carbonate and salt deposits, asphaltene-resin-paraffin deposits and deposits of a petroleum nature, and deposits of an organic and biological deposits. The proposed solution for removing various types of deposits contains hydrogen peroxide, complexone, an anti-foaming agent, water-soluble calixarene and water in the following ratio: hydrogen peroxide, a catalyst for decomposing peroxide compounds, an antifoaming agent, complexone, water-soluble calixarene and water in the following quantitative ratio:2-35% by mass of hydrogen peroxide; 2-20% by mass of a catalyst for decomposing peroxide compounds; 3-10% by mass of complexone; 0.1-5% by mass of surface-active agent; 0.01%-1.0% by mass of anti-foaming agent; 0.01-1% by mass of water-soluble calixarene, with the remainder being water. The technical result is an increase in the effectiveness of action of a solution (degree of cleaning) for cleaning surfaces soiled with deposits having a high content of organic substances, while simultaneously extending the field of use of said solution.

The present invention provides a treatment liquid that exhibits excellent washing properties and improves the smoothness of an object to be treated in a case where the treatment liquid is used for treating an object to be treated containing a cobalt-containing substance. The present invention also provides a method for treating an object to be treated. The treatment liquid according to an embodiment of the present invention contains water, hydroxylamine, and three kinds of first anions consisting of Cl.sup.−, NO.sub.2.sup.−, and NO.sub.3.sup.−, in which a total content of the first anions is 0.0001 to 30 parts by mass with respect to 100 parts by mass of the hydroxylamine.

This disclosure relates to a cleaning composition that contains 1) at least one redox agent; 2) at least one first chelating agent, the first chelating agent being a polyaminopolycarboxylic acid; 3) at least one metal corrosion inhibitor, the metal corrosion inhibitor being a substituted or unsubstituted benzotriazole; 4) at least one pH adjusting agent, the pH adjusting agent being a base free of a metal ion; and 5) water. This disclosure also relates to a method of using the above composition for cleaning a semiconductor substrate.

This disclosure relates to a cleaning composition that contains 1) at least one redox agent; 2) at least one first chelating agent, the first chelating agent being a polyaminopolycarboxylic acid; 3) at least one metal corrosion inhibitor, the metal corrosion inhibitor being a substituted or unsubstituted benzotriazole; 4) at least one pH adjusting agent, the pH adjusting agent being a base free of a metal ion; and 5) water. This disclosure also relates to a method of using the above composition for cleaning a semiconductor substrate.