This disclosure relates to a cleaning composition that contains 1) at least one redox agent; 2) at least one first chelating agent, the first chelating agent being a polyaminopolycarboxylic acid; 3) at least one second chelating agent different from the first chelating agent, the second chelating agent containing at least two nitrogen-containing groups; 4) at least one metal corrosion inhibitor, the metal corrosion inhibitor being a substituted or unsubstituted benzotriazole; 5) at least one organic solvent selected from the group consisting of water soluble alcohols, water soluble ketones, water soluble esters, and water soluble ethers; 6) water; and 7) optionally, at least one pH adjusting agent, the pH adjusting agent being a base free of a metal ion. This disclosure also relates to a method of using the above composition for cleaning a semiconductor substrate.

Compositions, methods, and systems permit selectively etching metal oxide from reactor metal parts (e.g., titanium and/or titanium alloys). The etching composition comprises an alkali metal hydroxide and gallic acid. The method is useful for cleaning reaction chambers used in the deposition of metal oxide films such as aluminum oxide.

Compositions, methods, and systems permit selectively etching metal oxide from reactor metal parts (e.g., titanium and/or titanium alloys). The etching composition comprises an alkali metal hydroxide and gallic acid. The method is useful for cleaning reaction chambers used in the deposition of metal oxide films such as aluminum oxide.

Disclosed is a conversion composition containing a trivalent chromium cation in an amount of 0.001 g/L to 20 g/L. Also disclosed is a system for treating a metal substrate that includes the conversion composition and a sealing composition comprising a lithium cation. Also disclosed is a method for treating a metal substrate that includes contacting at least a portion of a surface of the substrate with the conversion composition and then contacting at least a portion of the surface of the substrate with the sealing composition. Also disclosed is a substrate obtainable by treatment with the system and/or obtainable by the method of treating.

This disclosure relates to a cleaning composition that contains 1) at least one redox agent; 2) at least one first chelating agent, the first chelating agent being a polyaminopolycarboxylic acid; 3) at least one second chelating agent different from the first chelating agent, the second chelating agent containing at least two nitrogen-containing groups; 4) at least one metal corrosion inhibitor, the metal corrosion inhibitor being a substituted or unsubstituted benzotriazole; 5) at least one organic solvent selected from the group consisting of water soluble alcohols, water soluble ketones, water soluble esters, and water soluble ethers; 6) water; and 7) optionally, at least one pH adjusting agent, the pH adjusting agent being a base free of a metal ion. This disclosure also relates to a method of using the above composition for cleaning a semiconductor substrate.

A solution is provided and includes a strong base, a corrosion inhibitor, wherein the strong base is an alkali metal hydroxide, wherein the corrosion inhibitor is at least one of an organic acid having a-COOH functional group or an alkali metal salt of one of an organic acid having a-COOH functional group.

A detergent composition for metal product, which contains an amine (component A) represented by a general formula (I), a salt (component B) of a dicarboxylic acid (component B) represented by a general formula (II): HOOCR.sup.4COOH (II) and the amine (component A), a salt (component C) of a monocarboxylic acid (component C) represented by a general formula (III): R.sup.5COOH (III) and the amine (component A), a nonionic surfactant (component D) represented by a general formula (IV): R.sup.6O-{(EO)n/(PO)m}-H (IV), and water (component E) and has a pH of more than 7 and 10 or less. The detergent composition for metal product exhibits excellent detergency and metal corrosion suppressing performance.

The invention relates to a method for removing a substrate that is coated with an organic coated coating by means of ionogenic gel formation. In said method, a wet or dry organic coating that has not yet formed a film on the substrate is treated with an aqueous solution of a metal salt from main group I in the periodic table of the elements, a complexing agent and/or a basic compound having a pH value >10.

The invention relates to a method for removing a substrate that is coated with an organic coated coating by means of ionogenic gel formation. In said method, a wet or dry organic coating that has not yet formed a film on the substrate is treated with an aqueous solution of a metal salt from main group I in the periodic table of the elements, a complexing agent and/or a basic compound having a pH value >10.

The disclosure relates to a cleaning composition that aids in the removal of post-etch residues and aluminum-containing material, e.g., aluminum oxide, in the production of semiconductors that utilize an aluminum-containing etch stop layer. The compositions have a high selectivity for post-etch residue and aluminum-containing materials relative to low-k dielectric materials, cobalt-containing materials and other metals on the microelectronic device.