Provided is a method for producing a nitride semiconductor photoelectrode capable of improving the light energy conversion efficiency. The method for producing a nitride semiconductor photoelectrode includes a first step of forming an n-type gallium nitride layer on an insulating or conductive substrate, a second step of forming an indium gallium nitride layer on the n-type gallium nitride layer, a third step of forming a nickel layer n the indium gallium nitride layer, and a fourth step of heat-treating the nickel layer in an oxygen atmosphere.

A radiation-assisted (typically solar-assisted)electrolyzer cell and panel for high-efficiency hydrogen production comprises a photoelectrode and electrode pair, with said photoelectrode comprising either a photoanode electrically coupled to a cathode shared with an anode, or a photocathode electrically coupled to an anode shared with a cathode; electrolyte; gas separators; all within a container divided into two chambers by said shared cathode or shared anode, and at least a portion of which is transparent to the electromagnetic radiation required by said photoanode (or photocathode) to apply photovoltage to a shared cathode (or anode) that increases the electrolysis current and hydrogen production.

A radiation-assisted (typically solar-assisted)electrolyzer cell and panel for high-efficiency hydrogen production comprises a photoelectrode and electrode pair, with said photoelectrode comprising either a photoanode electrically coupled to a cathode shared with an anode, or a photocathode electrically coupled to an anode shared with a cathode; electrolyte; gas separators; all within a container divided into two chambers by said shared cathode or shared anode, and at least a portion of which is transparent to the electromagnetic radiation required by said photoanode (or photocathode) to apply photovoltage to a shared cathode (or anode) that increases the electrolysis current and hydrogen production.

A method of preparing a photocatalyst. The method includes a sulfone-containing conjugated polyimide obtained by solvothermally imidizing 3-sulfonyldianiline 1,4,5, 8-naphthalenetetracarboxylic dianhydride with poly (amic acid) (PAA). The photocatalyst of the present disclosure can be used in an electrochemical cell for water oxidation processes.

A method of preparing a photocatalyst. The method includes a sulfone-containing conjugated polyimide obtained by solvothermally imidizing 3-sulfonyldianiline 1,4,5, 8-naphthalenetetracarboxylic dianhydride with poly (amic acid) (PAA). The photocatalyst of the present disclosure can be used in an electrochemical cell for water oxidation processes.

A method of preparing a photocatalyst. The method includes a sulfone-containing conjugated polyimide obtained by solvothermally imidizing 3-sulfonyldianiline 1,4,5,8-naphthalenetetracarboxylic dianhydride with poly (amic acid) (PAA). The photocatalyst of the present disclosure can be used in an electrochemical cell for water oxidation processes.

A method of preparing a photocatalyst. The method includes a sulfone-containing conjugated polyimide obtained by solvothermally imidizing 3-sulfonyldianiline 1,4,5,8-naphthalenetetracarboxylic dianhydride with poly (amic acid) (PAA). The photocatalyst of the present disclosure can be used in an electrochemical cell for water oxidation processes.

Provided are a semiconductor material based on metal nanowires and a porous nitride, and a preparation method thereof. The semiconductor material includes: a substrate; a buffer layer formed on the substrate; and a composite material layer formed on the buffer layer the composite material layer includes: a transverse porous nitride template layer; and a plurality of metal nanowires filled in pores of the transverse porous nitride template layer.

A method for forming a single atom catalyst on a two-dimensional support material involves providing the two-dimensional support material. The two-dimensional support material is combined with at least two heteroatoms and a metal to form a solution. Liquid is removed from the solution to form a material that includes the two-dimensional support material, the at least two heteroatoms, and the metal. The material including the two-dimensional support material, the at least two heteroatoms, and the metal is heated to form the single atom catalyst that includes single atoms of the metal. The at least two heteroatoms bind the single atoms of the metal to, and stabilize the single atoms of the metal on, the two-dimensional support material.

A method for forming a single atom catalyst on a two-dimensional support material involves providing the two-dimensional support material. The two-dimensional support material is combined with at least two heteroatoms and a metal to form a solution. Liquid is removed from the solution to form a material that includes the two-dimensional support material, the at least two heteroatoms, and the metal. The material including the two-dimensional support material, the at least two heteroatoms, and the metal is heated to form the single atom catalyst that includes single atoms of the metal. The at least two heteroatoms bind the single atoms of the metal to, and stabilize the single atoms of the metal on, the two-dimensional support material.