The present invention concerns a tin plating bath comprising tin ions; at least one complexing agent selected from the group consisting of pyrophosphate ions, linear polyphosphate ions and cyclic polyphosphate ions and a nitrogen and sulfur containing stabilizing additive and titanium (III) ions as a reducing agent suitable to reduce tin ions to metallic tin. The present invention further discloses a method of depositing tin or a tin alloy onto a surface of a substrate. The tin plating bath is particularly suitable to be used in the electronics and semiconductor industry.

The present invention concerns a tin plating bath comprising tin ions; at least one complexing agent selected from the group consisting of pyrophosphate ions, linear polyphosphate ions and cyclic polyphosphate ions and a nitrogen and sulfur containing stabilizing additive and titanium (III) ions as a reducing agent suitable to reduce tin ions to metallic tin. The present invention further discloses a method of depositing tin or a tin alloy onto a surface of a substrate. The tin plating bath is particularly suitable to be used in the electronics and semiconductor industry.

The invention related to a method for extracting tin and/or lead contained in an electrically conductive mixture derived from waste, using a solution comprising methane sulphonic acid as an electrolytic solution.

The invention related to a method for extracting tin and/or lead contained in an electrically conductive mixture derived from waste, using a solution comprising methane sulphonic acid as an electrolytic solution.

Provided herein is a composition for forming a metal deposit on a substrate. The composition consists essentially of a carboxamide, trialkylamine chloride, and a metal salt. The carboxamide comprises Formula (I). The trialkylamine chloride and the carboxamide are in molar ratio between 1:1 and 1:30 to form an ionic liquid. The trialkylamine chloride is trimethylamine chloride (TMACl), triethylamine chloride (TEACl), triethanolamine chloride, or combinations thereof. The metal salt has the formula MX.sub.y, wherein M is a metal, X is a halide, and y is an oxidation number of M, the metal salt being in a concentration between about 0.2 and about 1.5 moles per liter of the ionic liquid. The metal deposit has an average grain size between about 0.2 μm and about 3 μm and contains less than about 1 mol % of each oxygen, carbon, and chlorine.

Provided herein is a composition for forming a metal deposit on a substrate. The composition consists essentially of a carboxamide, trialkylamine chloride, and a metal salt. The carboxamide comprises Formula (I). The trialkylamine chloride and the carboxamide are in molar ratio between 1:1 and 1:30 to form an ionic liquid. The trialkylamine chloride is trimethylamine chloride (TMACl), triethylamine chloride (TEACl), triethanolamine chloride, or combinations thereof. The metal salt has the formula MX.sub.y, wherein M is a metal, X is a halide, and y is an oxidation number of M, the metal salt being in a concentration between about 0.2 and about 1.5 moles per liter of the ionic liquid. The metal deposit has an average grain size between about 0.2 μm and about 3 μm and contains less than about 1 mol % of each oxygen, carbon, and chlorine.

An electroplating bath for depositing a silver/tin alloy on a substrate. The electroplating bath comprises (a) a source of tin ions; (b) a source of silver ions; (c) an acid; (d) a first complexing agent; (e) a second complexing agent, wherein the second complexing agent is selected from the group consisting of allyl thioureas, aryl thioureas, and alkyl thioureas, and combinations thereof; and (f) optionally, a wetting agent, and (g) optionally, an antioxidant.

An electroplating bath for depositing a silver/tin alloy on a substrate. The electroplating bath comprises (a) a source of tin ions; (b) a source of silver ions; (c) an acid; (d) a first complexing agent; (e) a second complexing agent, wherein the second complexing agent is selected from the group consisting of allyl thioureas, aryl thioureas, and alkyl thioureas, and combinations thereof; and (f) optionally, a wetting agent, and (g) optionally, an antioxidant.

The present disclosure provides a manufacturing method of indium tin oxide, including: providing a first electrolyte including choline chloride, urea, indium chloride, boric acid, and ascorbic acid; disposing a workpiece, wherein at least a part of the workpiece is in contact with the first electrolyte; heating the first electrolyte to 60° C.-95° C.; applying a first operating current to electroplate indium onto the workpiece; providing an second electrolyte including choline chloride, urea, tin chloride, boric acid, and ascorbic acid; disposing the indium-coated workpiece, wherein at least a part of the workpiece is in contact with the second electroplate; heating the second electroplate to 60° C.-95° C.; applying a second operating current to electroplate tin onto the workpiece; and annealing the indium and tin on the workpiece to form indium tin oxide in an oxygen environment.

The present disclosure provides a manufacturing method of indium tin oxide, including: providing a first electrolyte including choline chloride, urea, indium chloride, boric acid, and ascorbic acid; disposing a workpiece, wherein at least a part of the workpiece is in contact with the first electrolyte; heating the first electrolyte to 60° C.-95° C.; applying a first operating current to electroplate indium onto the workpiece; providing an second electrolyte including choline chloride, urea, tin chloride, boric acid, and ascorbic acid; disposing the indium-coated workpiece, wherein at least a part of the workpiece is in contact with the second electroplate; heating the second electroplate to 60° C.-95° C.; applying a second operating current to electroplate tin onto the workpiece; and annealing the indium and tin on the workpiece to form indium tin oxide in an oxygen environment.