A PCB terminal is provided with a rod-like base material and a plating layer covering a predetermined region of the base material. A constituent material of the base material is a copper alloy containing 20% by mass or more of zinc. The plating layer includes a first coating portion and a second coating portion. The first coating portion includes an entire peripheral layer entirely covering a region on side of a first end part, out of both end parts of the base material, in a circumferential direction of the base material. The second coating portion partially covers a region on side of a second end part, out of the both end parts of the base material, in the circumferential direction of the base material. The entire peripheral layer includes a tin-based layer and a barrier layer.

A structure includes a copper or copper alloy plating layer, in which Kirkendall void formation is suppressed. The copper or copper alloy plating layer is formed by electroplating at a prescribed first cathode current density by using a copper or copper alloy electroplating bath and then completing the electroplating after the first cathode current density is changed to a lower second cathode current density. The first cathode current density is a single cathode current density in the electroplating at this current density or an average cathode current density in the electroplating by combining plural cathode current densities. The first cathode current density is at lowest 5 A/dm.sup.2. A layer formed by changing the first cathode current density to the second cathode current density is a surface layer part of the copper or copper alloy plating layer, which can have a thickness of 0.05 μm to 15 μm.

A copper foil with a release layer is provided that capable of forming a circuit, of such as an embedded trace substrate, by a subtractive method in a simple process. A copper foil with a release layer, containing, in this order, a release layer; a barrier layer having dissolution resistance to a copper etchant; and a copper foil.

The present invention provides a copper-nickel alloy electroplating bath which is characterized by containing (a) a copper salt and a nickel salt, (b) a metal complexing agent, (c) a plurality of conductivity-imparting salts that are different from each other, (d) a compound that is selected from the group consisting of disulfide compounds, sulfur-containing amino acids and salts of these compounds, (e) a compound that is selected from the group consisting of sulfonic acid compounds, sulfimide compounds, sulfamic acid compounds, sulfone amides and salts of these compounds, and (f) a reaction product of a glycidyl ether and a polyhydric alcohol. This copper-nickel alloy electroplating bath is also characterized by having a pH of 3-8.

The present invention provides a copper-nickel alloy electroplating bath which is characterized by containing (a) a copper salt and a nickel salt, (b) a metal complexing agent, (c) a plurality of conductivity-imparting salts that are different from each other, (d) a compound that is selected from the group consisting of disulfide compounds, sulfur-containing amino acids and salts of these compounds, (e) a compound that is selected from the group consisting of sulfonic acid compounds, sulfimide compounds, sulfamic acid compounds, sulfone amides and salts of these compounds, and (f) a reaction product of a glycidyl ether and a polyhydric alcohol. This copper-nickel alloy electroplating bath is also characterized by having a pH of 3-8.

The present invention provides a carrier-attached copper foil, wherein an ultrathin copper foil is not peeled from the carrier prior to the lamination to an insulating substrate, but can be peeled from the carrier after the lamination to the insulating substrate. A carrier-attached copper foil comprising a copper foil carrier, an intermediate layer laminated on the copper foil carrier, and an ultrathin copper layer laminated on the intermediate layer, wherein the intermediate foil is configured with a Ni layer in contact with an interface of the copper foil carrier and a Cr layer in contact with an interface of the ultrathin copper layer, said Ni layer containing 1,000-40,000 μg/dm.sup.2 of Ni and said Cr layer containing 10-100 μg/dm.sup.2 of Cr is provided.

Reaction products of halogenated pyrimidines and nucleophilic linker units are included in metal electroplating baths to provide good throwing power. The electroplating baths can be used to plate metal, such as copper, tin and alloys thereof on printed circuit boards and semiconductors and fill through-holes and vias.

Reaction products of halogenated pyrimidines and nucleophilic linker units are included in metal electroplating baths to provide good throwing power. The electroplating baths can be used to plate metal, such as copper, tin and alloys thereof on printed circuit boards and semiconductors and fill through-holes and vias.

The present invention relates to a method for reducing the optical reflectivity of a copper and copper alloy circuitry wherein a thin palladium or palladium alloy layer is deposited by immersion-type plating onto said copper or copper alloy. Thereby, a dull greyish or greyish black or black layer is obtained and the optical reflectivity of said copper or copper alloy circuitry is reduced. The method according to the present invention is particularly suitable in the manufacture of image display devices, touch screen devices and related electronic components.

The present invention relates to a method for reducing the optical reflectivity of a copper and copper alloy circuitry wherein a thin palladium or palladium alloy layer is deposited by immersion-type plating onto said copper or copper alloy. Thereby, a dull greyish or greyish black or black layer is obtained and the optical reflectivity of said copper or copper alloy circuitry is reduced. The method according to the present invention is particularly suitable in the manufacture of image display devices, touch screen devices and related electronic components.