A method of providing spatial diversity for critical data delivery in a beamformed mmWave small cell is proposed. The proposed spatial diversity scheme offers duplicate or incremental data/signal transmission and reception by using multiple different beams for the same source and destination. The proposed spatial diversity scheme can be combined with other diversity schemes in time, frequency, and code, etc. for the same purpose. In addition, the proposed spatial diversity scheme combines the physical-layer resources associated with the beams with other resources of the same or different protocol layers. By spatial signaling repetition to avoid Radio Link Failure (RLF) and Handover Failure (HOF), mobility robustness can be enhanced. Mission-critical and/or time-critical data delivery can also be achieved without relying on retransmission.

A method of providing spatial diversity for critical data delivery in a beamformed mmWave small cell is proposed. The proposed spatial diversity scheme offers duplicate or incremental data/signal transmission and reception by using multiple different beams for the same source and destination. The proposed spatial diversity scheme can be combined with other diversity schemes in time, frequency, and code, etc. for the same purpose. In addition, the proposed spatial diversity scheme combines the physical-layer resources associated with the beams with other resources of the same or different protocol layers. By spatial signaling repetition to avoid Radio Link Failure (RLF) and Handover Failure (HOF), mobility robustness can be enhanced. Mission-critical and/or time-critical data delivery can also be achieved without relying on retransmission.

A method for depositing a tin-bismuth alloy on a substrate, the method including steps of (1) immersing the substrate and an anode in an electrolyte solution that includes water, a stannous salt, a bismuth salt, and at least one of sulfuric acid and sulfamic acid, the anode including tin and, optionally, bismuth, and (2) passing an electric current between the substrate and the anode to form a deposit on the substrate.

A method for depositing a tin-bismuth alloy on a substrate, the method including steps of (1) immersing the substrate and an anode in an electrolyte solution that includes water, a stannous salt, a bismuth salt, and at least one of sulfuric acid and sulfamic acid, the anode including tin and, optionally, bismuth, and (2) passing an electric current between the substrate and the anode to form a deposit on the substrate.

A method for pretreating a substrate prior to depositing a material thereon, the method including immersing the substrate in an activation solution for a predetermined period of time, the activation solution including an ammonium salt that includes a fluorine-containing anion, sulfuric acid and water.

A method for pretreating a substrate prior to depositing a material thereon, the method including immersing the substrate in an activation solution for a predetermined period of time, the activation solution including an ammonium salt that includes a fluorine-containing anion, sulfuric acid and water.

An electroplated article includes a base member that includes one or more base member-metallic elements; and an electroplated layer that is formed directly on the base member. The electroplated layer includes at least a first electroplated layer-metallic element and a second electroplated layer-metallic element that is different from the first electroplated layer-metallic element. The second electroplated layer-metallic element is a metallic element that is identical to at least one of the one or more base member-metallic elements. A ratio of the second electroplated layer-metallic element in the electroplated layer is continuously decreased as being away from the base member in the thickness direction of the electroplated layer. Alloy grains including at least the first and second electroplated layer-metallic elements are distributed in the electroplated layer such that a clear interface is not formed between the base member and the electroplated layer.

A method for producing a foil arrangement includes structuring a conductive foil to be applied or applied onto a support foil upper side of a support foil and coating a conductive foil upper side of the structured conductive foil with a protective layer. A cover foil is laminated onto the support foil upper side and onto a protective layer upper side of the protective layer after the coating step.

A method for producing a foil arrangement includes structuring a conductive foil to be applied or applied onto a support foil upper side of a support foil and coating a conductive foil upper side of the structured conductive foil with a protective layer. A cover foil is laminated onto the support foil upper side and onto a protective layer upper side of the protective layer after the coating step.

A microelectronic device includes a reflow structure. The reflow structure has a copper-containing member and a solder member, and a barrier layer between them. The barrier layer has metal grains, with a diffusion barrier filler between the metal grains. The metal grains include at least a first metal and a second metal, each selected from nickel, cobalt, lanthanum, and cerium, with each having a concentration in the metal grains of at least 10 weight percent. The diffusion barrier filler includes at least a third metal, selected from tungsten and molybdenum. A combined concentration of tungsten and molybdenum in the diffusion barrier filler is higher than in the metal grains to provide a desired resistance to diffusion of copper. The barrier layer includes 2 weight percent to 15 weight percent of the combined concentration of tungsten, and molybdenum. A bump bond structure and a lead frame package are disclosed.