A method of controlling alloy composition of deposited gold-tin alloy during electroplating of a large panel includes masking at least one planar surface of the panel with conductive material applied in a predetermined pattern. The masked panel is located at least partially within an electroplating solution including a gold-tin alloy in solution at a predetermined gold:tin ratio. Electrical current applied to the masked panel is conducted across the planar surface via the conductive material to induce a predetermined electrical current distribution across the planar surface and thereby pull gold ions and tin ions from the electroplating solution. The pulled ions are deposited upon a supermajority of an unmasked area of the masked panel. The predetermined pattern is selected to achieve deposition of the gold-tin alloy with substantially uniform alloy composition, directly corresponding to the predetermined gold:tin ratio, across the supermajority of the unmasked area of the masked panel.

A method of controlling alloy composition of deposited gold-tin alloy during electroplating of a large panel includes masking at least one planar surface of the panel with conductive material applied in a predetermined pattern. The masked panel is located at least partially within an electroplating solution including a gold-tin alloy in solution at a predetermined gold:tin ratio. Electrical current applied to the masked panel is conducted across the planar surface via the conductive material to induce a predetermined electrical current distribution across the planar surface and thereby pull gold ions and tin ions from the electroplating solution. The pulled ions are deposited upon a supermajority of an unmasked area of the masked panel. The predetermined pattern is selected to achieve deposition of the gold-tin alloy with substantially uniform alloy composition, directly corresponding to the predetermined gold:tin ratio, across the supermajority of the unmasked area of the masked panel.

A cyanide-free gold electroplating solution for forming gold deposits contains bismuth and compact-packed via-filling deposit with a U-shaped stacked structure in cross section inside drilled holes. A gold electroplating solution includes 15 g/L of gold (I) sodium sulfite (as gold element), 15 g/L of sodium sulfate, 50 g/L of sodium sulfite, 10 mg/L of thallium formate (as thallium element), 50 mg/L of bismuth nitrate (as bismuth element) and 1 g/L of sodium phosphate.

A cyanide-free gold electroplating solution for forming gold deposits contains bismuth and compact-packed via-filling deposit with a U-shaped stacked structure in cross section inside drilled holes. A gold electroplating solution includes 15 g/L of gold (I) sodium sulfite (as gold element), 15 g/L of sodium sulfate, 50 g/L of sodium sulfite, 10 mg/L of thallium formate (as thallium element), 50 mg/L of bismuth nitrate (as bismuth element) and 1 g/L of sodium phosphate.

A semiconductor package comprises a semiconductor chip having an active surface with a conductive pad thereon; an electroplated AuSn alloy bump over the active surface; and a (glass) substrate comprising conductive traces electrically coupling with the electroplated AuSn alloy bump, wherein the electroplated AuSn alloy bump has a composition from about Au.sub.0.35Sn.sub.0.15 to about Au.sub.0.75Sn.sub.0.25 in weight percent uniformly distributed from an end in proximity to the active surface to an end in proximity to the substrate. A method of manufacturing a semiconductor package comprises forming patterns of conductive pads on an active surface of a semiconductor chip; electroplating AuSn alloy bump over the conductive pads; and bonding the semiconductor chip on a corresponding conductive trace on a substrate by a reflow operation or a thermal press operation.

A semiconductor package comprises a semiconductor chip having an active surface with a conductive pad thereon; an electroplated AuSn alloy bump over the active surface; and a (glass) substrate comprising conductive traces electrically coupling with the electroplated AuSn alloy bump, wherein the electroplated AuSn alloy bump has a composition from about Au.sub.0.35Sn.sub.0.15 to about Au.sub.0.75Sn.sub.0.25 in weight percent uniformly distributed from an end in proximity to the active surface to an end in proximity to the substrate. A method of manufacturing a semiconductor package comprises forming patterns of conductive pads on an active surface of a semiconductor chip; electroplating AuSn alloy bump over the conductive pads; and bonding the semiconductor chip on a corresponding conductive trace on a substrate by a reflow operation or a thermal press operation.

A method for producing a foil arrangement includes structuring a conductive foil to be applied or applied onto a support foil upper side of a support foil and coating a conductive foil upper side of the structured conductive foil with a protective layer. A cover foil is laminated onto the support foil upper side and onto a protective layer upper side of the protective layer after the coating step.

A method for producing a foil arrangement includes structuring a conductive foil to be applied or applied onto a support foil upper side of a support foil and coating a conductive foil upper side of the structured conductive foil with a protective layer. A cover foil is laminated onto the support foil upper side and onto a protective layer upper side of the protective layer after the coating step.

A method for adhering a metal layer and a polymer layer includes forming a metal layer, forming a nanoporous metal structure on the metal layer, and compressing a polymer layer on the nanoporous metal structure such that a polymer is infiltrated into the nanoporous metal structure.

The invention relates to a make-up solution for a galvanic bath comprising organometallic components, a wetting agent, a complexing agent and free cyanide, wherein the make-up solution further comprises copper in the form of copper II cyanide and potassium, and complex indium allowing, after addition of alkaline aurocyanide, to galvanically depositing a gold alloy.