Single crystals of the new semiconducting oxychalcogenide phase were synthesized using a novel crystal growth method. The crystals had low defects and homogeneous composition as characterized by single crystal X-ray diffraction and scanning electron microscopy, respectively. Heat capacity and resistivity measurements were in agreement with the calculated band structure calculations indicating semiconductivity, with a band gap of about 3 eV.

Single crystals of the new semiconducting oxychalcogenide phase were synthesized using a novel crystal growth method. The crystals had low defects and homogeneous composition as characterized by single crystal X-ray diffraction and scanning electron microscopy, respectively. Heat capacity and resistivity measurements were in agreement with the calculated band structure calculations indicating semiconductivity, with a band gap of about 3 eV.

The present application discloses a nonlinear optical crystal material, preparation method and application of the nonlinear optical crystal material. The nonlinear optical crystal material has an excellent infrared nonlinear optical performance, whose frequency-doubling intensity can reach 9.3 times of AgGaS.sub.2 with the same particle size, and it meets type-I phase matching; and its laser damage threshold can reach 7.5 times of AgGaS.sub.2 with the same particle size. The nonlinear optical crystal material has important application value in the frequency-converters which can be used for frequency doubling, sum frequency, difference frequency, optical parametric oscillation of laser in mid and far infrared waveband, and the like.

A crystal growth apparatus includes a pressure-resistant vessel; a plurality of support tables arranged inside the pressure-resistant vessel; inner vessels each placed over the support tables, respectively; growth vessels contained the inner vessels, respectively; a heating means for heating the growth vessels; and a central rotating shaft connected to the support tables. The central rotating shaft is distant from central axes of the inner vessels, respectively. A seed crystal, a raw material of the Group 13 element and a flux are charged in each of the growth vessels, and the growth vessels are heated to form a melt and a nitrogen-containing gas is supplied to the melt to grow a crystal of a nitride of said Group 13 element while the central rotating shaft is rotated.

The present disclosure relates to tellurite crystals, growing methods of the same, and applications thereof; the crystals a chemical formula of MTe.sub.3O.sub.8, wherein M=Ti, Zr, Hf, which belongs to an Ia-3 space group of a cubic crystal system, wherein a transmittance waveband ranges from visible light to infrared light, with a transparency ≥70%. According to the present disclosure, a growing method of a tellurite crystal is provided, wherein the crystal may be grown using a flux method, a Czochralski method, or a Bridgman-Stockbarger method. The tellurite crystals may be used as an acousto-optic crystal for fabricating an optical modulation device. The present disclosure takes the lead internationally in growing the tellurite single crystals, the size and quality of which sufficiently meet the demands of practical applications of the tellurite single crystals.

The present disclosure relates to tellurite crystals, growing methods of the same, and applications thereof; the crystals a chemical formula of MTe.sub.3O.sub.8, wherein M=Ti, Zr, Hf, which belongs to an Ia-3 space group of a cubic crystal system, wherein a transmittance waveband ranges from visible light to infrared light, with a transparency ≥70%. According to the present disclosure, a growing method of a tellurite crystal is provided, wherein the crystal may be grown using a flux method, a Czochralski method, or a Bridgman-Stockbarger method. The tellurite crystals may be used as an acousto-optic crystal for fabricating an optical modulation device. The present disclosure takes the lead internationally in growing the tellurite single crystals, the size and quality of which sufficiently meet the demands of practical applications of the tellurite single crystals.

It is provided a method of growing a group 13 nitride crystal layer, on an underlying substrate including a seed crystal layer composed of a group 13 nitride. The underlying substrate is immersed in a melt containing a flux to grow a group 13 nitride crystal layer two-dimensionally on a nitrogen polar surface of the seed crystal layer by flux method.

A method for preparing a large-size two-dimensional layered metal thiophosphate crystal includes the following steps: 1) weighing raw materials of indium spheres, phosphorous lumps and sulfur granules according to a predetermined amount and proportion, mixing them, and using iodine as a transport agent and potassium iodide as a molten salt; 2) adding the raw materials, the iodine and the potassium iodide to a reaction vessel together, and vacuum sealing it under a certain pressure, and then subjecting it to a high-temperature reaction; 3) taking out the products after the reaction, and washing the products to remove the residual iodine and potassium iodide and obtain large-size two-dimensional layered metal thiophosphate crystals. This method is simple and highly efficient.

A nonlinear optical crystal of barium cesium borate, a preparation method and use thereof are provided. The nonlinear optical crystal has a chemical formula of CsBa.sub.3B.sub.11O.sub.20 and a molecular weight of 983.84. The nonlinear optical crystal belongs to an orthorhombic crystal system; a space group of the nonlinear optical crystal is Cmc2.sub.1; lattice parameters of the nonlinear optical crystal are a=19.011(7) Å, b=10.837(4) Å, c=8.578(3) Å, Z=4, V=1767.4(11) Å.sup.3; and a Mohs hardness of the nonlinear optical crystal is 4-5. The nonlinear optical crystal is grown by a flux method. The nonlinear optical crystal of the barium cesium borate obtained is used for a manufacture of non-linear optical devices. The nonlinear optical crystal has a large size of centimeter-scale at least and is prepared by fast, simple and low-cost operations. The nonlinear optical crystal prepared has a large size, a wide light transmission band and good mechanical properties.

A nonlinear optical crystal of barium cesium borate, a preparation method and use thereof are provided. The nonlinear optical crystal has a chemical formula of CsBa.sub.3B.sub.11O.sub.20 and a molecular weight of 983.84. The nonlinear optical crystal belongs to an orthorhombic crystal system; a space group of the nonlinear optical crystal is Cmc2.sub.1; lattice parameters of the nonlinear optical crystal are a=19.011(7) Å, b=10.837(4) Å, c=8.578(3) Å, Z=4, V=1767.4(11) Å.sup.3; and a Mohs hardness of the nonlinear optical crystal is 4-5. The nonlinear optical crystal is grown by a flux method. The nonlinear optical crystal of the barium cesium borate obtained is used for a manufacture of non-linear optical devices. The nonlinear optical crystal has a large size of centimeter-scale at least and is prepared by fast, simple and low-cost operations. The nonlinear optical crystal prepared has a large size, a wide light transmission band and good mechanical properties.