The present invention provides a method for preparing graphene by using a molten inorganic salt reaction bed. The method includes the following steps: using phthalocyanine substance as a reaction raw material, well-mixing an inorganic salt with the phthalocyanine substance in the inorganic salt reaction bed, performing pyrolysis by using a temperature programmed method in an atmosphere furnace under a protective gas, and separating out a highly planar-oriented graphene material. By adopting the method, a graphene material can be obtained by pyrolysis in a non-hydrogen environment. The method is simple, the process is environmentally friendly, industrial production can be achieved, and the obtained graphene is highly planar-oriented.

The present invention provides a method for preparing graphene by using a molten inorganic salt reaction bed. The method includes the following steps: using phthalocyanine substance as a reaction raw material, well-mixing an inorganic salt with the phthalocyanine substance in the inorganic salt reaction bed, performing pyrolysis by using a temperature programmed method in an atmosphere furnace under a protective gas, and separating out a highly planar-oriented graphene material. By adopting the method, a graphene material can be obtained by pyrolysis in a non-hydrogen environment. The method is simple, the process is environmentally friendly, industrial production can be achieved, and the obtained graphene is highly planar-oriented.

The present disclosure relates to tellurite crystals, growing methods of the same, and applications thereof; the crystals a chemical formula of MTe.sub.3O.sub.8, wherein M=Ti, Zr, Hf, which belongs to an Ia-3 space group of a cubic crystal system, wherein a transmittance waveband ranges from visible light to infrared light, with a transparency 70%. According to the present disclosure, a growing method of a tellurite crystal is provided, wherein the crystal may be grown using a flux method, a Czochralski method, or a Bridgman-Stockbarger method. The tellurite crystals may be used as an acousto-optic crystal for fabricating an optical modulation device. The present disclosure takes the lead internationally in growing the tellurite single crystals, the size and quality of which sufficiently meet the demands of practical applications of the tellurite single crystals.

The present disclosure relates to tellurite crystals, growing methods of the same, and applications thereof; the crystals a chemical formula of MTe.sub.3O.sub.8, wherein M=Ti, Zr, Hf, which belongs to an Ia-3 space group of a cubic crystal system, wherein a transmittance waveband ranges from visible light to infrared light, with a transparency 70%. According to the present disclosure, a growing method of a tellurite crystal is provided, wherein the crystal may be grown using a flux method, a Czochralski method, or a Bridgman-Stockbarger method. The tellurite crystals may be used as an acousto-optic crystal for fabricating an optical modulation device. The present disclosure takes the lead internationally in growing the tellurite single crystals, the size and quality of which sufficiently meet the demands of practical applications of the tellurite single crystals.

The present invention is related to a method for the production of single crystalline MgTiO.sub.3 flakes, in particular in the geikielite crystal structure, to single crystalline MgTiO.sub.3 flakes obtained by this method as well as to the use thereof, in particular as pigments in several application media.

The present invention is related to a method for the production of single crystalline MgTiO.sub.3 flakes, in particular in the geikielite crystal structure, to single crystalline MgTiO.sub.3 flakes obtained by this method as well as to the use thereof, in particular as pigments in several application media.

The present invention is related to a method for the production of single crystalline TiO.sub.2 flakes in the rutile crystal structure, to single crystalline TiO.sub.2 flakes obtained by this method as well as to the use thereof, especially as pigments in several application media.

The present invention is related to a method for the production of single crystalline TiO.sub.2 flakes in the rutile crystal structure, to single crystalline TiO.sub.2 flakes obtained by this method as well as to the use thereof, especially as pigments in several application media.

An alumina substrate wherein an AlN layer is formed on a surface of the alumina substrate and a rare earth elements-containing layer and/or rare earth elements-containing regions is/are formed in the interior of the AlN layer or in the interface between the AlN layer and the alumina substrate.

An alumina substrate wherein an AlN layer is formed on a surface of the alumina substrate and a rare earth elements-containing layer and/or rare earth elements-containing regions is/are formed in the interior of the AlN layer or in the interface between the AlN layer and the alumina substrate.