Produced is a large single crystal with no crystal grain boundary, which is a high-quality single crystal that has a uniform composition in both the vertical and horizontal directions at an optimum dopant concentration. Provided is a single-crystal production equipment including, at least: a granular raw material supply apparatus which supplies a certain amount of a granular raw material downward; a granular raw material melting apparatus which heats and melts the granular raw material and supplies the thus obtained raw material melt downward; and a crystallization apparatus which allows a single crystal to precipitate out of a mixed melt that is formed upon receiving a melt formed by irradiating an infrared ray from a first infrared ray irradiation equipment to the upper surface of a seed single crystal and the raw material melt supplied from the granular raw material melting apparatus.

Provided is a method for manufacturing a synthetic gemstone, which manufactures a synthetic gemstone from a body tissue separated from a person or an animal, the method including: extracting a biological material from the body tissue; preparing a mixed material by mixing the biological material with a gemstone material; and growing a synthetic gemstone on a crystal seed as a single crystal by melting the mixed material.

Disclosed is a plastic semiconductor material and a preparation method thereof. The semiconductor material comprises an argentite-based compound represented by the following formula (I): Ag.sub.2-X.sub.S.sub.1-Y.sub.(I), in which 0<0.5, 0<0.5, Xis at least one of Cu, Au, Fe, Co, Ni, Zn, Ti, or V, and Y is at least one of N, P, As, Sb, Se, Te, O, Br, Cl, I, or F. The material can withstand certain deformations, similar to organic materials, and has excellent semiconductor properties with adjustable electrical properties, thereby enabling the preparation of high-performance flexible semiconductor devices.

Disclosed is a plastic semiconductor material and a preparation method thereof. The semiconductor material comprises an argentite-based compound represented by the following formula (I): Ag.sub.2-X.sub.S.sub.1-Y.sub.(I), in which 0<0.5, 0<0.5, Xis at least one of Cu, Au, Fe, Co, Ni, Zn, Ti, or V, and Y is at least one of N, P, As, Sb, Se, Te, O, Br, Cl, I, or F. The material can withstand certain deformations, similar to organic materials, and has excellent semiconductor properties with adjustable electrical properties, thereby enabling the preparation of high-performance flexible semiconductor devices.

Provided is a gemstone growing device including: a first pipe; a second pipe disposed below the first pipe and connected to the first pipe; a third pipe configured to surround the second pipe; a mixed material input part disposed in the first pipe; an oxygen input pipe connected to the first pipe; a first hydrogen input pipe connected to the third pipe; and a muffle disposed below the third pipe.

Provided is a method for manufacturing a synthetic gemstone, which manufactures a synthetic gemstone from a body tissue separated from a person or an animal, the method including: extracting a biological material from the body tissue; preparing a mixed material by mixing the biological material with a gemstone material; and growing a synthetic gemstone on a crystal seed as a single crystal by melting the mixed material.

A system comprises a silicon seed arranged on a pedestal, where the silicon seed is ring shaped and is configured to receive melted silicon at a feed rate to form an ingot, and where the pedestal is configured to rotate at a rotational speed. A controller is configured to, while the silicon seed receives the melted silicon and while the ingot is forming: receive feedback regarding a diameter of the ingot and regarding an angle of a meniscus of the ingot, and control the rotational speed of the pedestal and the feed rate of the melted silicon based on the feedback to control the diameter of the ingot and the angle of the meniscus of the ingot.

A system comprises a silicon seed arranged on a pedestal, where the silicon seed is ring shaped and is configured to receive melted silicon at a feed rate to form an ingot, and where the pedestal is configured to rotate at a rotational speed. A controller is configured to, while the silicon seed receives the melted silicon and while the ingot is forming: receive feedback regarding a diameter of the ingot and regarding an angle of a meniscus of the ingot, and control the rotational speed of the pedestal and the feed rate of the melted silicon based on the feedback to control the diameter of the ingot and the angle of the meniscus of the ingot.

A single-crystal production equipment includes a transparent quartz tube, in which a seed crystal is placed; a powder raw material supply apparatus, which is arranged above the transparent quartz tube and supplies a powder raw material onto the seed crystal placed in the transparent quartz tube; and an infrared ray irradiation apparatus, which is arranged outside the transparent quartz tube and applies an infrared ray to the upper surface of the seed crystal placed in the transparent quartz tube as well as the powder raw material supplied into the transparent quartz tube by the powder raw material supply apparatus. The infrared ray melts the upper surface of the seed crystal and the powder raw material and subsequently the resulting melt solidifies on the seed crystal to provide a single crystal.

A system comprises a silicon seed arranged on a pedestal, where the silicon seed is ring shaped and is configured to receive melted silicon at a feed rate to form an ingot, and where the pedestal is configured to rotate at a rotational speed. A controller is configured to, while the silicon seed receives the melted silicon and while the ingot is forming: receive feedback regarding a diameter of the ingot and regarding an angle of a meniscus of the ingot, and control the rotational speed of the pedestal and the feed rate of the melted silicon based on the feedback to control the diameter of the ingot and the angle of the meniscus of the ingot