The present invention relates a method for controlling a growth interface shape while growing a monocrystal ingot by a Czochralski method, the method including a step of starting a growth of the monocrystal ingot after setting a control condition of a monocrystal growing process so that an interface of the ingot becomes a target shape; a step of deriving a measurement value by measuring a weight of the ingot grown for a predetermined time by means of a load cell disposed on an upper portion the monocrystal ingot; a step of deriving a theoretical value of the weight of the monocrystal ingot through a diameter of the monocrystal ingot measured by a diameter measuring camera disposed outside of a process chamber for a predetermined time and a height of the monocrystal ingot grown for the predetermined time; a step of predicting a growth interface shape of a growing monocrystal ingot by deriving a difference between the measurement value and the theoretical value; and changing process conditions during growth of the monocrystal ingot by comparing the predicted interface shape of the monocrystal ingot with the targeted interface shape of the monocrystal ingot. Therefore, the interface shape of the growing ingot may be predicted during the growing process of the monocrystal ingot, and the process conditions may be controlled to grow the silicon ingot in the targeted interface shape.

The present invention relates a method for controlling a growth interface shape while growing a monocrystal ingot by a Czochralski method, the method including a step of starting a growth of the monocrystal ingot after setting a control condition of a monocrystal growing process so that an interface of the ingot becomes a target shape; a step of deriving a measurement value by measuring a weight of the ingot grown for a predetermined time by means of a load cell disposed on an upper portion the monocrystal ingot; a step of deriving a theoretical value of the weight of the monocrystal ingot through a diameter of the monocrystal ingot measured by a diameter measuring camera disposed outside of a process chamber for a predetermined time and a height of the monocrystal ingot grown for the predetermined time; a step of predicting a growth interface shape of a growing monocrystal ingot by deriving a difference between the measurement value and the theoretical value; and changing process conditions during growth of the monocrystal ingot by comparing the predicted interface shape of the monocrystal ingot with the targeted interface shape of the monocrystal ingot. Therefore, the interface shape of the growing ingot may be predicted during the growing process of the monocrystal ingot, and the process conditions may be controlled to grow the silicon ingot in the targeted interface shape.

An apparatus for growing a silicon single crystal according to embodiments includes a chamber including a crucible accommodating silicon melt; a support shaft rotating and lifting the crucible while supporting the crucible; a main heater part for applying heat to the crucible side, the heater disposed beside the crucible; an upper heat insulation member located over the crucible; and upper heater parts located at a lower end portion of the upper heat insulation member, wherein the upper heater parts have diameters different from each other with respect to a center of the crucible, and include a plurality of ring-shaped heaters which are spaced apart from each other. Due to the individually controllable upper heater parts, a uniform thermal environment can be provided for silicon melt accommodated in a crucible, and localized solidification of the silicon melt can be prevented so that the quality of a silicon single crystal and the ingot pulling speed can be readily controlled.

An apparatus for growing a silicon single crystal according to embodiments includes a chamber including a crucible accommodating silicon melt; a support shaft rotating and lifting the crucible while supporting the crucible; a main heater part for applying heat to the crucible side, the heater disposed beside the crucible; an upper heat insulation member located over the crucible; and upper heater parts located at a lower end portion of the upper heat insulation member, wherein the upper heater parts have diameters different from each other with respect to a center of the crucible, and include a plurality of ring-shaped heaters which are spaced apart from each other. Due to the individually controllable upper heater parts, a uniform thermal environment can be provided for silicon melt accommodated in a crucible, and localized solidification of the silicon melt can be prevented so that the quality of a silicon single crystal and the ingot pulling speed can be readily controlled.

A manufacturing method of single crystal is provided with a melting process for dissolving raw material in a crucible and a pulling-up process of a single crystal from a melt by the Czochralski method. The pulling-up process includes detecting an edge line of a fusion ring, determining an approximated curve of the edge line by approximating the edge line of the fusion ring by an even function, eliminating constituent pixels of the fusion ring from the image of the fusion ring as noise, the constituent pixels being positioned on the side of the melt relative to the approximated curve and the constituent pixels of the fusion ring and a deviation between the constituent pixels and the approximated curve being a predetermined number of pixels, and calculating the center position of the single crystal from the edge line of the fusion ring from which the noise has been eliminated.

A manufacturing method of single crystal is provided with a melting process for dissolving raw material in a crucible and a pulling-up process of a single crystal from a melt by the Czochralski method. The pulling-up process includes detecting an edge line of a fusion ring, determining an approximated curve of the edge line by approximating the edge line of the fusion ring by an even function, eliminating constituent pixels of the fusion ring from the image of the fusion ring as noise, the constituent pixels being positioned on the side of the melt relative to the approximated curve and the constituent pixels of the fusion ring and a deviation between the constituent pixels and the approximated curve being a predetermined number of pixels, and calculating the center position of the single crystal from the edge line of the fusion ring from which the noise has been eliminated.

The present invention provides a method for evaluating a vitreous silica crucible which can measure a three-dimensional shape of the inner surface of the crucible in a non-destructive manner. According to the present invention, A method for evaluating a vitreous silica crucible, including the steps of: moving an internal ranging section along an inner surface of the vitreous silica crucible in a contactless manner; measuring a distance between the internal ranging section and the inner surface as a distance from the inner surface, by subjecting the inner surface of the crucible to irradiation with laser light and then detecting a reflected light from the inner surface, the laser light being emitted from the internal ranging section in an oblique direction with respect to the inner surface, and the measurement being conducted at a plurality of measuring points along a course of a movement of the internal ranging section; and obtaining a three-dimensional shape of the inner surface of the crucible, by associating three-dimensional coordinates of each of the measuring points with the distance from the inner surface, is provided.

The present invention provides a method for evaluating a vitreous silica crucible which can measure a three-dimensional shape of the inner surface of the crucible in a non-destructive manner. According to the present invention, A method for evaluating a vitreous silica crucible, including the steps of: moving an internal ranging section along an inner surface of the vitreous silica crucible in a contactless manner; measuring a distance between the internal ranging section and the inner surface as a distance from the inner surface, by subjecting the inner surface of the crucible to irradiation with laser light and then detecting a reflected light from the inner surface, the laser light being emitted from the internal ranging section in an oblique direction with respect to the inner surface, and the measurement being conducted at a plurality of measuring points along a course of a movement of the internal ranging section; and obtaining a three-dimensional shape of the inner surface of the crucible, by associating three-dimensional coordinates of each of the measuring points with the distance from the inner surface, is provided.

A method for measuring a three-dimensional shape of an inner surface of a vitreous silica crucible which enables the measurement of the three-dimensional shape of the inner surface of the crucible without contaminating the inner surface of the crucible, is provided. According to the present invention, a method for measuring a three-dimensional shape of a vitreous silica crucible, including a fogging step to form a fog onto an inner surface of the vitreous silica crucible, a three-dimensional shape measuring step to measure a three-dimensional shape of the inner surface, by measuring a reflected light from the inner surface irradiated with light, is provided.

A method for measuring a three-dimensional shape of an inner surface of a vitreous silica crucible which enables the measurement of the three-dimensional shape of the inner surface of the crucible without contaminating the inner surface of the crucible, is provided. According to the present invention, a method for measuring a three-dimensional shape of a vitreous silica crucible, including a fogging step to form a fog onto an inner surface of the vitreous silica crucible, a three-dimensional shape measuring step to measure a three-dimensional shape of the inner surface, by measuring a reflected light from the inner surface irradiated with light, is provided.