The embodiments of the present disclosure disclose a method for controlling crystal growth. The method includes: obtaining an actual crystal parameter in a target time slice; obtaining a reference crystal parameter in the target time slice; determining a temperature control parameter based on the actual crystal parameter and the reference crystal parameter; determining a pulling control parameter based on the actual crystal parameter and the reference crystal parameter; and adjusting a temperature and a pulling speed in a next time slice after the target time slice respectively based on the temperature control parameter and the pulling control parameter.

The embodiments of the present disclosure disclose a method for controlling crystal growth. The method includes: obtaining an actual crystal parameter in a target time slice; obtaining a reference crystal parameter in the target time slice; determining a temperature control parameter based on the actual crystal parameter and the reference crystal parameter; determining a pulling control parameter based on the actual crystal parameter and the reference crystal parameter; and adjusting a temperature and a pulling speed in a next time slice after the target time slice respectively based on the temperature control parameter and the pulling control parameter.

An apparatus for production of single crystal sapphire is disclosed. The apparatus can include a die and an insulated chimney mounted above the die. The die can be in a first active heat zone. The chimney can include a second heat zone. The apparatus may be used in edge defined film-fed growth techniques for the production of single crystal material exhibiting an absence of lineage.

An apparatus for production of single crystal sapphire is disclosed. The apparatus can include a die and an insulated chimney mounted above the die. The die can be in a first active heat zone. The chimney can include a second heat zone. The apparatus may be used in edge defined film-fed growth techniques for the production of single crystal material exhibiting an absence of lineage.

A cantilever device for extending capacity of a scale used in a crystal growth apparatus having a pulling head wherein upward movement of a support column in the pulling head decreases a weight measured by the scale. The device includes a horizontal arm having first and second brackets, wherein the first bracket is attached to the pulling head. The device also includes a plate that extends through openings in the first and second brackets, wherein the plate includes a contact end and a free end. Further, the device includes a flexible element attached between the arm and the plate to form a pivot to enable rotation of the plate. A load is positioned on the plate wherein the load causes rotation of the plate about the pivot to cause upward movement of the contact end to move the support column upward to decrease weight measured by the scale.

A cantilever device for extending capacity of a scale used in a crystal growth apparatus having a pulling head wherein upward movement of a support column in the pulling head decreases a weight measured by the scale. The device includes a horizontal arm having first and second brackets, wherein the first bracket is attached to the pulling head. The device also includes a plate that extends through openings in the first and second brackets, wherein the plate includes a contact end and a free end. Further, the device includes a flexible element attached between the arm and the plate to form a pivot to enable rotation of the plate. A load is positioned on the plate wherein the load causes rotation of the plate about the pivot to cause upward movement of the contact end to move the support column upward to decrease weight measured by the scale.

The embodiments of the present disclosure disclose a method for controlling crystal growth. The method includes: obtaining an actual crystal parameter in a target time slice; obtaining a reference crystal parameter in the target time slice; determining a temperature control parameter based on the actual crystal parameter and the reference crystal parameter; determining a pulling control parameter based on the actual crystal parameter and the reference crystal parameter; and adjusting a temperature and a pulling speed in a next time slice after the target time slice respectively based on the temperature control parameter and the pulling control parameter.

The embodiments of the present disclosure disclose a method for controlling crystal growth. The method includes: obtaining an actual crystal parameter in a target time slice; obtaining a reference crystal parameter in the target time slice; determining a temperature control parameter based on the actual crystal parameter and the reference crystal parameter; determining a pulling control parameter based on the actual crystal parameter and the reference crystal parameter; and adjusting a temperature and a pulling speed in a next time slice after the target time slice respectively based on the temperature control parameter and the pulling control parameter.

This application provides a liquid feeding device, a single crystal furnace and a supplying method therefor, and a crystal pulling method, and relates to the field of crystal growth. The liquid feeding device includes a melting device and a supplying device. The melting device is connected to an exterior of the single crystal furnace. The melting device includes a melting cavity and a heating component. The heating component melts solid material in the melting cavity into liquid material, and conveys the liquid material to a crucible. The supplying device is configured to convey solid material into the melting cavity.

This application provides a liquid feeding device, a single crystal furnace and a supplying method therefor, and a crystal pulling method, and relates to the field of crystal growth. The liquid feeding device includes a melting device and a supplying device. The melting device is connected to an exterior of the single crystal furnace. The melting device includes a melting cavity and a heating component. The heating component melts solid material in the melting cavity into liquid material, and conveys the liquid material to a crucible. The supplying device is configured to convey solid material into the melting cavity.