A method of making high quality insulating single crystalline In.sub.2Se.sub.3 films by (1) depositing at least one quintuple layer (QL) of Bi.sub.2Se.sub.3 on a substrate layer at a temperature below which only the Se adheres to the substrate; (2) depositing a plurality of In.sub.2Se.sub.3 QL's on the deposited Bi.sub.2Se.sub.3 layer or layers at a temperature between about 200 C. and about 330 C. to form a hetero-structure; and (3) heating the hetero-structure to a temperature between about 400 C. and about 700 C. so that the Bi.sub.2Se.sub.3 layer is diffused through the In.sub.2Se.sub.3 layer and evaporated away.

Stabilized, high-doped silicon carbide is described. A silicon carbide crystal is grown on a substrate using chemical vapor deposition so that the silicon carbide crystal includes a dopant and the strain compensating component. The strain compensating component can be an isoelectronic element and/or an element with the same majority carrier type as the dopant. The silicon carbide crystal can then be cut into silicon carbide wafers. In some embodiments, the dopant is n-type and the strain compensating component is selected from a group comprising germanium, tin, arsenic, phosphorus, and combinations thereof. In some embodiments, the strain compensating component comprises germanium and the dopant is nitrogen.

An object of the present invention is to provide a novel SiC single crystal with reduced internal stress while suppressing SiC sublimation. In order to solve the above problems, the present invention provides a method for producing SiC single crystals, including a stress reduction step of heating a SiC single crystal at 1800? C. or higher in an atmosphere containing Si and C elements to reduce internal stress in the SiC single crystal. With this configuration, the present invention can provide a novel SiC single crystal with reduced internal stress while suppressing SiC sublimation.

Disclosed is a molecular beam epitaxy (MBE) thin film growth apparatus. The MBE thin film growth apparatus includes a growth chamber which is connected to a vacuum pump and of which an inside is maintained in an ultra-high vacuum state, a substrate manipulator which is provided inside the growth chamber and on which a substrate is mounted, a load-lock chamber which is provided outside the growth chamber and communicates with the growth chamber and in which at least one substrate, which is mounted on the substrate manipulator, for growing a thin film is located, and a substrate transfer rod that transfers the substrate from the load-lock chamber to the growth chamber or from the growth chamber to the load-lock chamber, wherein the load-lock chamber is disposed to face the substrate manipulator and disposed collinear with a substrate transfer path of the substrate transfer rod.

Methods and systems for growing thin films via molecular-beam epitaxy (MBE) on substrates are provided. The methods and systems utilize a thermally conductive backing plate including an infrared-absorbing coating (IAC) formed, for example, on one side of the thermally conductive backing plate to provide an asymmetric emissivity that absorbs infrared radiation (IR) on the side having the IRC and does not on the non-coated side of the thermally conductive backing plate (e.g., refractive metal or alloy). The asymmetric emissivity shields the thin film being deposited on a substrate from the IR during formation.

Disclosed is a method for using a SiC container (3) in which Si vapor and C vapor are generated in the internal space during the heat treatment. The SiC container may be heated in Si atmosphere to grow an epitaxial layer of single crystalline SiC on the underlying substrate housed in the internal space. The SiC container may be heated in a TaC container of a material including TaC supplemented with a source of Si to grow an epitaxial layer of single crystalline SiC on the underlying substrate housed in the internal space.

A terahertz antenna includes at least one photoconductive layer which generates charge carriers upon irradiation of light and two electroconductive antenna elements via which an electric field can be applied to at least one section of the photoconductive layer. The photoconductive layer being doped with a dopant in a concentration of at least 11018 cm3, the dopant being a transition metal. The photoconductive layer is produced by molecular beam epitaxy at a growth temperature of at least 200 C. and not more than 500 C., the dopant being arranged in the photoconductive layer such that it produces a plurality of point defects.

A method for fabricating a transparent conductive oxide thin film, the method comprising the following steps: fabricating Ba.sub.1-xLa.sub.xSnO.sub.3 using a solid-phase reaction method to obtain a BLSO magnetron sputtering target material; and fabricating a BLSO thin film by means of direct deposition with argon as a sputtering gas by using a SrTiO.sub.3, MgO, LaAlO.sub.3, (La,Sr)(Al,Ta)O.sub.3(LSAT), MgAl.sub.2O.sub.4 or Al.sub.2O.sub.3 single crystal substrate and the BLSO magnetron sputtering target material, such that the transparent conductive oxide thin film is fabricate is provided. During sputtering, the temperature of the substrate is 750? C.-950? C., and the deposition pressure of the Ar gas is 25-77 Pa. The room-temperature mobility of the transparent conductive oxide thin film can reach 115 cm.sup.2/V.Math.s, the room-temperature carrier concentration can reach 1.2?10.sup.21 cm.sup.?3, and the room-temperature conductivity can reach 14,000 S/cm.

A method for formation of a transition metal dichalcogenide (TMDC) material layer on a substrate arranged in a process chamber of a molecular beam epitaxy tool is provided. The method includes evaporating metal from a solid metal source, forming a chalcogen-including gas-plasma, and introducing the evaporated metal and the chalcogen-including gas-plasma into the process chamber thereby forming a TMDC material layer on the substrate.

A silicon carbide single crystal manufacturing device comprises a furnace, a crucible disposed in the furnace, and a seed crystal holder capable of mounting seed crystals. The seed crystal holder is disposed at an upper portion of the crucible, and the seed crystal holder is capable of rotating and lifting up and down. Inside the furnace is further disposed with a furnace heater capable of heating the furnace to form an ambient first temperature gradient in the furnace. A heater-cooler device capable of acting on silicon carbide single crystals is disposed outside the seed crystal holder. The silicon carbide single crystal manufacturing device is capable of growing silicon carbide single crystals at a high speed while ensuring the high quality of the silicon carbide single crystals, thereby realizing large-diameter growth of the silicon carbide single crystals and reducing the loss in post-machining process.