The invention describes a heating system (100) and a corresponding method of heating a heating surface (180) of an object (150, 950) to a processing temperature of at least 100? C., wherein the heating system (100) comprises semiconductor light sources (115), and wherein the heating system (100) is adapted to heat an area element of the heating surface (180) with at least 50 semiconductor light sources (115) at the same time. The heating system (100) may be part of a reactor for processing semiconductor structures. The light emitted by means of the semiconductor light sources (115) overlaps at the heating surface (180). Differences of the characteristic of one single semiconductor light source (115) may be blurred at the heating surface (180) such that a homogeneous temperature distribution across a processing surface of a, for example, wafer may be enabled.

Various embodiments may provide a low temperature (i.e., less than 850 C.) method of Silicon-Germanium (SiGe) on sapphire (Al.sub.2O.sub.3) (SiGe/sapphire) growth that may produce a single crystal film with less thermal loading effort to the substrate than conventional high temperature (i.e., temperatures above 850 C.) methods. The various embodiments may alleviate the thermal loading requirement of the substrate, which in conventional high temperature (i.e., temperatures above 850 C.) methods had surface temperatures within the range of 850 C.-900 C. The various embodiments may provide a new thermal loading requirement of the sapphire substrate for growing single crystal SiGe on the sapphire substrate in the range of about 450 C. to about 500 C.

Embodiments of the present disclosure generally relate to apparatus, systems, and methods for in-situ film growth rate monitoring. A thickness of a film on a substrate is monitored during a substrate processing operation that deposits the film on the substrate. The thickness is monitored while the substrate processing operation is conducted. The monitoring includes directing light in a direction toward a crystalline coupon. The direction is perpendicular to a heating direction. In one implementation, a reflectometer system to monitor film growth during substrate processing operations includes a first block that includes a first inner surface. The reflectometer system includes a light emitter disposed in the first block and oriented toward the first inner surface, and a light receiver disposed in the first block and oriented toward the first inner surface. The reflectometer system includes a second block opposing the first block.

Provided herein is a laser processing system integrated with an MBE device, including an MBE growth chamber, a sample table, an optical path mechanism, a heat insulation mechanism, and a cooling mechanism. An opening is formed in a side of the MBE growth chamber. The sample table is fixed in the MBE growth chamber, corresponds to a position of the opening, and is used for placing a substrate sample material. The optical path mechanism is relatively arranged on a side of the MBE growth chamber, and the optical path mechanism is provided with a light-emitting end. A side of the light-emitting end penetrates through the opening of the MBE growth chamber, extends into the MBE growth chamber, and is spaced apart from the sample table. The optical path mechanism is sealedly connected to the opening of the MBE growth chamber. By integrating the optical path mechanism within the MBE device and utilizing direct laser writing, the system facilitates close-range processing of the sample, enhancing the laser's focusing capability and effectively ensuring the precision and quality of laser processing.

A silicon carbide substrate includes a dopant. The silicon carbide substrate has, on an off-downstream side with respect to a center of the silicon carbide substrate in plan view, a portion having a resistivity lower than a resistivity at the center of the silicon carbide substrate in plan view. A value obtained by dividing a difference between the resistivity of the silicon carbide substrate at the center of the silicon carbide substrate in plan view and a minimum resistivity of the silicon carbide substrate on the off-downstream side with respect to the center of the silicon carbide substrate in plan view by the resistivity of the silicon carbide substrate at the center of the silicon carbide substrate in plan view is 0.015 or less. The resistivity of the silicon carbide substrate increases from a position at which the silicon carbide substrate has the minimum resistivity toward the off-downstream side.

Silicon carbide (SiC) wafers and related methods are disclosed that include large diameter SiC wafers with wafer shape characteristics suitable for semiconductor manufacturing. Large diameter SiC wafers are disclosed that have reduced deformation related to stress and strain effects associated with forming such SiC wafers. As described herein, wafer shape and flatness characteristics may be improved by reducing crystallographic stress profiles during growth of SiC crystal boules or ingots. Wafer shape and flatness characteristics may also be improved after individual SiC wafers have been separated from corresponding SiC crystal boules. In this regard, SiC wafers and related methods are disclosed that include large diameter SiC wafers with suitable crystal quality and wafer shape characteristics including low values for wafer bow, warp, and thickness variation.

Stabilized, high-doped silicon carbide is described. A silicon carbide crystal is grown on a substrate using chemical vapor deposition so that the silicon carbide crystal includes a dopant and the strain compensating component. The strain compensating component can be an isoelectronic element and/or an element with the same majority carrier type as the dopant. The silicon carbide crystal can then be cut into silicon carbide wafers. In some embodiments, the dopant is n-type and the strain compensating component is selected from a group comprising germanium, tin, arsenic, phosphorus, and combinations thereof. In some embodiments, the strain compensating component comprises germanium and the dopant is nitrogen.

A method for formation of a transition metal dichalcogenide (TMDC) material layer on a substrate arranged in a process chamber of a molecular beam epitaxy tool is provided. The method includes evaporating metal from a solid metal source, forming a chalcogen-including gas-plasma, and introducing the evaporated metal and the chalcogen-including gas-plasma into the process chamber thereby forming a TMDC material layer on the substrate.

A method of making high quality insulating single crystalline In.sub.2Se.sub.3 films by (1) depositing at least one quintuple layer (QL) of Bi.sub.2Se.sub.3 on a substrate layer at a temperature below which only the Se adheres to the substrate; (2) depositing a plurality of In.sub.2Se.sub.3 QL's on the deposited Bi.sub.2Se.sub.3 layer or layers at a temperature between about 200 C. and about 330 C. to form a hetero-structure; and (3) heating the hetero-structure to a temperature between about 400 C. and about 700 C. so that the Bi.sub.2Se.sub.3 layer is diffused through the In.sub.2Se.sub.3 layer and evaporated away.

A method for fabricating a III-nitride semiconductor body that includes high temperature and low temperature growth steps.