The invention discloses an effusion cell with a retractable crucible for molecular beam epitaxy, comprising a crucible bracket, a mounting flange, a heat shielding cylinderarranged on an upper side of the mounting flange, a gate valvearranged on a lower side of the mounting flange, an outer cylinderarranged on a lower side of the gate valveand a driving devicefor driving the crucible bracketto move between the heat shielding cylinderand the outer cylinder, the heat shielding cylinderis internally provided with a heater, the outer cylinder driving deviceis hermetically connected to the outer cylinder.

A method for making LNO film, including the steps of identifying a substrate, identifying a deposition target, placing the substrate and deposition target in a deposition environment, evolving target material into the deposition environment, and depositing evolved target material onto the substrate to yield an LNO film. The deposition environment defines a temperature of between 500 degrees Celsius and 750 degrees Celsius and a pressure of about 10.sup.−6 Torr. A seed or buffer layer may be first deposited onto the substrate, wherein the seed layer is about 30 mole percent gold and about 70 LiNbO.sub.3.

In an n-type 4H-SiC single crystal substrate of the present disclosure, the concentration of the element N as a donor and the concentration of the element B as an acceptor are both 3×10.sup.18/cm.sup.3 or more, and a threading dislocation density is less than 4,000/cm.sup.2.

In various embodiments, single-crystal aluminum nitride boules and substrates have low Urbach energies and/or absorption coefficients at deep-ultraviolet wavelengths. The single-crystal aluminum nitride may function as a platform for the fabrication of light-emitting devices such as light-emitting diodes and lasers.

The present invention provides a single crystal growth crucible and a single crystal growth method which can suppress the recrystallization of the raw material gas which has been sublimated on the surface of the raw material and can suppress the generation of different polytypes in single crystal growth. The single crystal growth crucible includes an inner bottom, a crystal mounting part, and a deposition preventing member, wherein a raw material is provided in the inner bottom, the crystal mounting part faces the inner bottom, the deposition preventing member has a first surface comprising metal carbide, a first surface is disposed to face the crystal mounting part, the deposition preventing member is disposed in a central area of the inner bottom in a plan view from the crystal mounting part, and the first surface is disposed in accordance with the position of the surface of the raw material.

Methods for depositing films using crystals or powders as a source material are provided. The films can have a thickness of at least 100 nanometers and can be inorganic (e.g., inorganic perovskite) films, and the source material can be the same composition and/or stoichiometry as the deposited film. The deposition process can be a single-step thermal process using a close space sublimation (CSS) process.

Methods for preparing a monolayer or few-layer centimeter-scale crystalline black phosphorus film, products thereof, and electronic and optoelectronic devices including the same.

The disclosure provides a silicon carbide seed crystal and a method of manufacturing a silicon carbide ingot. The silicon carbide seed crystal has a silicon surface and a carbon surface opposite to the silicon surface. A difference D between a basal plane dislocation density BPD1 of the silicon surface and a basal plane dislocation density BPD2 of the carbon surface satisfies the following formula (1), a local thickness variation (LTV) of the silicon carbide seed crystal is 2.5 μm or less, and a stacking fault (SF) density of the silicon carbide seed crystal is 10 EA/cm.sup.2 or less:
D=(BPD1−BPD2)/BPD1≤25%  (1).

In various embodiments, single-crystal aluminum nitride boules and substrates having high transparency to ultraviolet light and low defect density are formed. The single-crystal aluminum nitride may function as a platform for the fabrication of light-emitting devices such as light-emitting diodes and lasers.

A doped SiOC liquid starting material provides a p-type polymer derived ceramic SiC crystalline materials, including boules and wafers. P-type SiC electronic devices. Low resistivity SiC crystals, wafers and boules, having phosphorous as a dopant. Polymer derived ceramic doped SiC shaped charge source materials for vapor deposition growth of doped SiC crystals.