A film deposition system includes a chamber, a stage disposed in the chamber configured to support a substrate, one or more gas inlet structures configured to supply one or more gases to an interior of the chamber, and one or more microwave-introducing windows that introduce microwave radiation to the chamber to excite the one or more source gases to produce a plasma proximate the stage. The gas inlet structures include one or more angled gas inlets that introduce a plasma-shaping gas flow to the chamber at an angle relative to a symmetry axis of the stage. The plasma-shaping gas flow interacts with the plasma in a way that facilitates axisymmetric deposition of material on a surface of the substrate with the plasma.

In a single-crystal diamond material, a concentration of non-substitutional nitrogen atoms is not more than 200 ppm, a concentration of substitutional nitrogen atoms is lower than the concentration of the non-substitutional nitrogen atoms, and the single-crystal diamond material has a crystal growth main surface having an off angle of not more than 20°. A perforated tool includes a single-crystal diamond die, wherein in the single-crystal diamond die, a concentration of non-substitutional nitrogen atoms is not more than 200 ppm, a concentration of substitutional nitrogen atoms is lower than the concentration of the non-substitutional nitrogen atoms, and the single-crystal diamond die has a low-index plane represented by a Miller index of not less than −5 and not more than 5 in an integer, a perpendicular line of the low-index plane having an off angle of not more than 20° relative to an orientation of a hole for wire drawing.

The present disclosure relates to substrates for use in microwave plasma reactors. Certain substrates include a cylindrical disc of a carbide forming refractory metal having a flat growth surface on which CVD diamond is to be grown and a flat supporting surface opposed to said growth surface. The cylindrical disc may have a diameter of 80 mm or more. The growth surface may have a flatness variation no more than 100 mm The supporting surface may have a flatness variation no more than 100 mm.

A wafer supporting mechanism including: a wafer supporting table; and a movable part supported by the wafer supporting table, wherein the wafer supporting table includes a wafer supporting portion for transfer that stands up from a first surface opposing a back surface of a wafer to be placed and is provided further toward an inner side than an outer peripheral edge of the wafer to be placed, and the movable part includes a wafer supporting portion for film formation that is positioned further toward an outer peripheral side of the wafer to be placed than the wafer supporting portion for transfer and is relatively movable with respect to the wafer supporting table in a standing direction of the wafer supporting portion for transfer.

A product of a chemical reaction, being a five carbon atom molecule having a tetrahedral structure consisting of four apical carbon atoms and a fifth carbon atom located centrally within the tetrahedral structure.

Variations in wafer thickness due to non-uniform CVD depositions at angular positions corresponding to crystallographic orientation of the wafer are reduced by providing a ring below the susceptor having inward projections at azimuthal positions which reduce radiant heat impinging upon the wafer at positions of increased deposition.

The present invention provides a heat-insulating shield member, wherein the heat-insulating shield member is arranged and used between a SiC source housing (3) and a substrate support (4) in a single crystal manufacturing apparatus (10), wherein the single crystal manufacturing apparatus (10) comprises a crystal growth container (2) and a heating member (5) arranged on an outer periphery of the crystal growth container (2), wherein the crystal growth container (2) includes the SiC source housing (3) disposed at a lower portion of the apparatus, and the substrate support (4) which is arranged above the SiC source housing (3) and supports a substrate (S) used for crystal growth so as to face the SiC source housing (3), and wherein the single crystal manufacturing apparatus (10) is configured to grow a single crystal (W) from a SiC source (M) on the substrate (S) by sublimating the SiC source (M) from the SiC source housing (3).

Thin freestanding nitride veneers can be used for the fabrication of semiconductor devices. These veneers are typically less than 100 microns thick. The use of thin veneers also eliminates the need for subsequent wafer thinning for improved thermal performance and 3D packaging.

Implementations described herein provide apparatus and methods for laser-assisted deposition of films while forming electronic devices. In one implementation, a method for depositing a layer on one or more substrates is provided. The method comprises flowing a deposition precursor gas across a surface of the one or more substrates disposed within a processing volume of a processing chamber, thermally activating the deposition precursor gas to deposit a material layer on the surface of the one or more substrates, dissociating an etch precursor gas in a gas activation cell by exposing the etch precursor gas to photons from an energy source assembly having a wavelength selected for pyrolytic dissociation of the etch precursor gas and introducing the dissociated etch precursor gas into the processing volume to etch at least a portion of the material layer from the surface of the one or more substrates.

A method includes placing a wafer into a production chamber, providing a heating source to heat the wafer, and projecting a laser beam on the wafer using a laser projector. The method further includes, when the wafer is heated by both of the heating source and the laser beam, performing a process selected from an epitaxy process to grow a semiconductor layer on the wafer, and an etching process to etch the semiconductor layer.