Processes for fabricating multi- and monolayer silicene on catalyst metal surfaces by means of plasma-enhanced chemical vapor deposition (PECVD). Silicene is grown by means of PECVD from a starting mixture of H.sub.2 and SiH.sub.4 having an H.sub.2:SiH.sub.4 ratio of 100 to 400 on an Ag(111) substrate having a substrate temperature between 20 C. and 290 C., with the deposition being performed for about 10-25 minutes at an RF power between 10 W and 500 W and under a chamber pressure between about 100 mTorr and 1300 mTorr. In most cases, the substrate will be in the form of an Ag(111) film sputtered on a fused silica substrate. A multi-layer silicene film can be formed by extending the deposition time past 25 minutes.

A method and apparatus for processing a semiconductor substrate is described. A substrate processing apparatus is disclosed that includes a process chamber, a substrate support disposed inside the process chamber, a plurality of lamps arranged in a lamphead and positioned proximate to the substrate support, a gas source for providing a purge gas in a lateral flow path across the substrate support, and a controller that differentially adjusts power to individual lamps of the plurality of lamps based on a direction of the flow path.

A plasma processing apparatus includes a toroidal-shape plasma vessel comprising a process chamber. A magnetic core surrounds a portion of the toroidal-shape plasma vessel. An RF power supply having an output that is electrically connected to the magnetic core energizes the magnetic core, thereby forming a toroidal plasma loop discharge in the plasma chamber. A workpiece holder is positioned in the toroidal-shape plasma vessel and includes at least one face. A plasma guiding structure is shaped and dimensioned so as to constrain a section of plasma in the toroidal plasma loop to travel substantially perpendicular to a normal to the at least one face.

A diamond substrate is formed of diamond single crystals by preparing a base substrate; forming plural pillar-shaped diamonds formed of diamond single crystals on one side of the base substrate; causing a diamond single crystal to grow from a tip of each pillar-shaped diamond and coalescing the diamond single crystals growing from the tips of the pillar-shaped diamonds to form a diamond substrate layer; separating the diamond substrate layer from the base substrate; and manufacturing a diamond substrate from the diamond substrate layer, a shape in an in-plane direction of the diamond substrate is a circular shape or a circular shape having an orientation flat plane formed therein and has a diameter of two inches or more.

A composition of matter comprising a film on a graphitic substrate, said film having been grown epitaxially on said substrate, wherein said film comprises at least one group III-V compound or at least one group II-VI compound.

The present invention provides a heat-insulating shield member, wherein the heat-insulating shield member is arranged and used between a SiC source housing (3) and a substrate support (4) in a single crystal manufacturing apparatus (10), wherein the single crystal manufacturing apparatus (10) comprises a crystal growth container (2) and a heating member (5) arranged on an outer periphery of the crystal growth container (2), wherein the crystal growth container (2) includes the SiC source housing (3) disposed at a lower portion of the apparatus, and the substrate support (4) which is arranged above the SiC source housing (3) and supports a substrate (S) used for crystal growth so as to face the SiC source housing (3), and wherein the single crystal manufacturing apparatus (10) is configured to grow a single crystal (W) from a SiC source (M) on the substrate (S) by sublimating the SiC source (M) from the SiC source housing (3).

A method for in situ synthesis of graphene along a lengthwise direction of a waveguide applied to a photonic device includes processing an evanescent field of laser propagating in the waveguide to spread outward the waveguide, depositing a nickel thin film on a surface of the waveguide, growing graphene between a surface of the waveguide and a nickel thin film by irradiating telecommunication laser to a core of the waveguide, and removing the nickel thin film from the waveguide. Accordingly, graphene with high optical nonlinearity is in situ synthesized in the photonic device.

A plasma processing apparatus includes a toroidal-shape plasma vessel comprising a process chamber. A magnetic core surrounds a portion of the toroidal-shape plasma vessel. An RF power supply having an output that is electrically connected to the magnetic core energizes the magnetic core, thereby forming a toroidal plasma loop discharge in the plasma chamber. A workpiece holder is positioned in the toroidal-shape plasma vessel and includes at least one face. A plasma guiding structure is shaped and dimensioned so as to constrain a section of plasma in the toroidal plasma loop to travel substantially perpendicular to a normal to the at least one face.

A composition (or an aggregate) comprising an epitaxial h-BN/BNNT structure that comprises a hexagonal boron nitride structure that is epitaxial with respect to a boron nitride nanotube structure. Also, a composition (or an aggregate) that comprises independent boron nitride nanotubes, in which a total mass percentage of independent hexagonal boron nitride and residual boron in the composition is not more than 35%. Also, a composition (or an aggregate) in which not more than 1% of independent boron nitride nanotubes and boron nitride nanotube structures have a dixie cup or bamboo defect. Also, a composition in which at least 50% of independent boron nitride nanotubes and boron nitride nanotube structures are single-wall. Also, a method of making a composition that comprises epitaxial h-BN/BNNT structures.

An apparatus for producing diamond and performing real time in situ analysis, comprising: a housing, a reaction chamber, the reaction chamber being structurally connected to the housing, the reaction chamber comprising of an enclosed area adapted to house the growing of diamonds, a radiating means, the radiating means being mounted above the reaction chamber within the housing, the radiating means adapted to emit microwave into the reaction chamber to effect the growth of diamonds within the reaction chamber, a dielectric cover being provided at the top of the reaction chamber and adapted to allow the radiation wave from the radiating means to enter the reaction chamber, a recording means mounted within the annual housing and above the reaction chamber, a measuring mechanism arranged at the periphery of the reaction chamber, a microscope adjacently arranged on the outside of the reaction chamber.