A crystal can be formed using vapor deposition. In one set of embodiments, the crystal can be grown such that the crystal selectively grown along a particular surface at a relatively faster rate as compared to another surface. In another embodiment, the assist material may aid in transporting or depositing the vapor species of a constituent to surfaces of the crystal. In a further set of embodiments, the crystal can be vapor grown in the presence of an assist material that is attracted to or repelled from a particular location of the crystal to increase or reduce crystal growth rate at a region adjacent to the location. The position of the relatively locally greater net charge within the assist material may affect the crystal plane to which the assist material is attracted or repelled. An as-grown crystal may be achieved that has a predetermined geometric shape.

There is provided a semiconductor manufacturing device, including: a processing vessel; a partition wall that divides at least a part of a space in the processing vessel into a growth section and a cleaning section; a substrate holding member disposed in the growth section; a source gas supply system that supplies a source gas into the growth section; a cleaning gas supply system that supplies a cleaning gas into the cleaning section; and a heater that heats the growth section and the cleaning section.

The silicon carbide layer has a second main surface. The second main surface has a peripheral region within 5 mm from an outer edge thereof, and a central region surrounded by the peripheral region. The silicon carbide layer has a central surface layer. An average value of a carrier concentration in the central surface layer is not less than 1×10.sup.14 cm.sup.−3 and not more than 5×10.sup.16 cm.sup.−3. Circumferential uniformity of the carrier concentration is not more than 2%, and in-plane uniformity of the carrier concentration is not more than 10%. An average value of a thickness of a portion of the silicon carbide layer sandwiched between the central region and the silicon carbide single-crystal substrate is not less than 5 μm. Circumferential uniformity of the thickness is not more than 1%, and in-plane uniformity of the thickness is not more than 4%.

A nucleation layer comprised of group III and V elements is directly deposited onto the surface of a substrate made of a group IV element. Together with a first gaseous starting material containing a group III element, a second gaseous starting material containing a group V element is introduced at a process temperature of greater than 500° C. into a process chamber containing the substrate. It is essential that at least at the start of the deposition process of the nucleation layer, a third gaseous starting material containing a group IV element is fed into the process chamber, together with the first and second gaseous starting material. The third gaseous starting material develops an n-doping effect in the deposited III-V crystal, which causes a decrease in damping at a dopant concentration of less than 1×10.sup.18 cm.sup.−3.

A method of forming a silicon layer includes introducing a source gas containing a precursor material and a carrier gas into a reactor, controlling a gas flow of the source gas through a first main flow controller unit in response to a change of a concentration of the precursor material in the source gas, introducing an auxiliary gas into the reactor, and controlling a gas flow of the auxiliary gas through a second main flow controller unit such that a total gas flow of the source gas and the auxiliary gas into the reactor is held constant when the gas flow of the source gas changes.

A vapor phase growth method using a vapor phase growth apparatus including a reaction chamber, a shower plate disposed in the upper portion of the reaction chamber so as to supply a gas into the reaction chamber, and a support portion provided below the shower plate inside the reaction chamber so as to place a substrate thereon, the method includes: placing the substrate on the support portion; heating the substrate; preparing a plurality of kinds of process gases for a film formation process; preparing a mixed gas by controlling mixing ratio between a first purging gas and a second purging gas, wherein the first purging gas and the second purging gas are selected from hydrogen and inert gases, a molecular weight of the first purging gas is smaller than an average molecular weight of the plurality of kinds of process gases and a molecular weight of the second purging gas is larger than the average molecular weight of the plurality of kinds of process gases, so that the average molecular weight of the mixed gas becomes closer to the average molecular weight of the plurality of kinds of process gases than molecular weight of the first purging gas or molecular weight of the second purging gas; ejecting the plurality of kinds of process gases from an inner area of the shower plate, and the mixed gas from an outer area of the shower plate; and forming a semiconductor film on the surface of the substrate.

Embodiments described herein relate to a lower side wall for use in a processing chamber. a lower side wall for use in a processing chamber is disclosed herein. The lower side wall includes an inner circumference, an outer circumference, a top surface, a plurality of flanges, and a first concave portion. The outer circumference is concentric with the inner circumference. The plurality of flanges project from the inner circumference. The first concave portion includes a plurality of grooves arranged along a circumferential direction of the lower side wall. Each groove has an arc shape such that the plurality of grooves concentrate a gas when the gas contacts the plurality of grooves.

A vapor phase growth apparatus according to as embodiment includes n reaction chambers, a main gas supply path supplying a process gas to the n reaction chambers, a main mass flow controller controlling a flow rate of the process gas, a branch portion branching the main gas supply path, n sub gas supply paths branched from the main gas supply path at the branch portion, the n sub gas supply paths supplying branched process gases to the n reaction chambers, n first stop valves in the n sub gas supply paths between the branch portion and the n reaction chambers, distances from the n first stop valves to the branch portion are less than distances from the n first stop valves to the n reaction chambers, and n sub mass flow controllers in the n sub gas supply paths between the n first stop valves and the n reaction chambers.

A silicon-doped n-type aluminum nitride monocrystalline substrate wherein, at a photoluminescence measurement at 23° C., a ratio (I1/I2) between the emission spectrum intensity (I1) having a peak within 370 to 390 nm and the emission peak intensity (I2) of the band edge of aluminum nitride is 0.5 or less; a thickness is from 25 to 500 μm; and a ratio (electron concentration/silicon concentration) between the electron concentration and the silicon concentration at 23° C. is from 0.0005 to 0.001.

A method for manufacturing a large-scale single crystal monolayer of hBN including: preparing a single crystal copper substrate of (111) face in a chemical vapor deposition (CVD) apparatus; removing impurities of the single crystal copper substrate of (111) face; forming a plurality of hBN crystal seeds by depositing a vaporized ammonia borane or a vaporized borazine on the surface of the single crystal copper substrate from which the impurities are removed; and forming a large-scale single crystal monolayer of hBN grown by mutual coherence between the hBN crystal seeds, an apparatus for manufacturing the same, and a substrate for a monolayer UV graphene growth using the same.