Systems and methods for continuous sapphire growth are disclosed. One embodiment may take the form of a method including feeding a base material into a crucible located within a growth chamber, heating the crucible to melt the base material and initiating crystalline growth in the melted base material to create a crystal structure. Additionally, the method includes pulling the crystal structure away from crucible and feeding the crystal structure out of the growth chamber.

The present invention discloses single-walled carbon nanotubes horizontal arrays with ultra-high density and the preparation method. The method comprises the following steps: loading a catalyst on a single crystal growth substrate; after annealing, introducing hydrogen into a chemical vapor deposition system to conduct a reduction reaction of the catalyst; and maintaining the introduction of the hydrogen to conduct the orientated growth of a single-walled carbon nanotube. The density of the ultra-high density single-walled carbon nanotube horizontal array obtained by this method exceeds 130 tubes/micrometer, and an electrical performance test is performed on the prepared ultra-high density single-walled carbon nanotube horizontal array shows a high on-current density of 380 μA/μm, and the transconductance of 102.5 μS/μm.

The present invention discloses single-walled carbon nanotubes horizontal arrays with ultra-high density and the preparation method. The method comprises the following steps: loading a catalyst on a single crystal growth substrate; after annealing, introducing hydrogen into a chemical vapor deposition system to conduct a reduction reaction of the catalyst; and maintaining the introduction of the hydrogen to conduct the orientated growth of a single-walled carbon nanotube. The density of the ultra-high density single-walled carbon nanotube horizontal array obtained by this method exceeds 130 tubes/micrometer, and an electrical performance test is performed on the prepared ultra-high density single-walled carbon nanotube horizontal array shows a high on-current density of 380 μA/μm, and the transconductance of 102.5 μS/μm.

A break resistant sapphire plate and a corresponding production process. The sapphire plate may include a planar sapphire substrate, and at least one shock absorbing layer arranged on a surface of the substrate. The shock absorbing layer may have a thickness of between 0.1% to 10% of the thickness of the substrate. The production process for producing the sapphire plate may include providing a planar sapphire substrate, and coating at least one surface of the substrate with a shock absorbing layer. The shock absorbing layer may include a layer thickness between 0.1% to 10% of the thickness of the substrate.

A break resistant sapphire plate and a corresponding production process. The sapphire plate may include a planar sapphire substrate, and at least one shock absorbing layer arranged on a surface of the substrate. The shock absorbing layer may have a thickness of between 0.1% to 10% of the thickness of the substrate. The production process for producing the sapphire plate may include providing a planar sapphire substrate, and coating at least one surface of the substrate with a shock absorbing layer. The shock absorbing layer may include a layer thickness between 0.1% to 10% of the thickness of the substrate.

A layered coating for a sapphire component is described herein. The sapphire component comprises one or more layers of alumina adhered to the surface of a sapphire member. At least the first layer of alumina adheres to the surface of the sapphire member filling all defects in the surface forming a pristine new layer that also provides isolation from damage.

A layered coating for a sapphire component is described herein. The sapphire component comprises one or more layers of alumina adhered to the surface of a sapphire member. At least the first layer of alumina adheres to the surface of the sapphire member filling all defects in the surface forming a pristine new layer that also provides isolation from damage.

A method of increasing the luminescence efficiency of titanium-doped oxide crystal, used as a laser material, is disclosed. This is accomplished by tempering the crystal at a temperature from 1750° C. to 50° C. below the melting point of the oxide crystal in a hydrogen protecting atmosphere with a constant partial pressure of the aluminium suboxide Al.sub.2O gas. By applying the method of the present invention, its luminescence efficiency of titanium-doped oxide crystal increases by 10 to 50 percent, and possibly by as much as 100 percent or more compared to previous technological treatments.

A method and apparatus for the production of C-plane single crystal sapphire is disclosed. The method and apparatus may use edge defined film-fed growth techniques for the production of single crystal material exhibiting low polycrystallinity and/or low dislocation density.

A method and apparatus for the production of C-plane single crystal sapphire is disclosed. The method and apparatus may use edge defined film-fed growth techniques for the production of single crystal material exhibiting low polycrystallinity and/or low dislocation density.