An alumina substrate having a carbon-containing phase with an AlN layer formed on a surface of the alumina substrate.

An alumina substrate having a carbon-containing phase with an AlN layer formed on a surface of the alumina substrate.

A cover glass for an electronic display comprises a plurality of layers of sapphire material, each of the layers having a substantially single crystal plane orientation, with adjacent layers having different substantially single crystal plane orientations. One or more interface layers are defined between adjacent layers of the sapphire material, with the adjacent layers of sapphire material bonded together at the one or more interface layers. A display window is defined in the cover glass, and configured for viewing a viewable area of the electronic display through the plurality of layers of the sapphire material bonded together at the one or more interface layers.

A cover glass for an electronic display comprises a plurality of layers of sapphire material, each of the layers having a substantially single crystal plane orientation, with adjacent layers having different substantially single crystal plane orientations. One or more interface layers are defined between adjacent layers of the sapphire material, with the adjacent layers of sapphire material bonded together at the one or more interface layers. A display window is defined in the cover glass, and configured for viewing a viewable area of the electronic display through the plurality of layers of the sapphire material bonded together at the one or more interface layers.

A deposition device for providing a thin film on a substrate. The device comprises a material source for providing at least one first metallic element which does not re-evaporate substantially from the substrate under particular growth conditions, at least one second metallic element or metal based molecule which does re-evaporate substantially from the substrate under the same growth conditions, and a component suitable for forming an at least one first compound with the at least one first metallic element and an at least one second compound with the at least one second metallic element or metal based molecule. The device comprises a controller configured to control the growth conditions, and the amounts of the at least one first metallic element, the at least one second metallic element or metal based molecule, and the component so as to obtain a substantially stoichiometric thin film.

A deposition device for providing a thin film on a substrate. The device comprises a material source for providing at least one first metallic element which does not re-evaporate substantially from the substrate under particular growth conditions, at least one second metallic element or metal based molecule which does re-evaporate substantially from the substrate under the same growth conditions, and a component suitable for forming an at least one first compound with the at least one first metallic element and an at least one second compound with the at least one second metallic element or metal based molecule. The device comprises a controller configured to control the growth conditions, and the amounts of the at least one first metallic element, the at least one second metallic element or metal based molecule, and the component so as to obtain a substantially stoichiometric thin film.

A surface-coated cutting tool includes a base material and a coating formed on the base material. The coating includes an α-Al.sub.2O.sub.3 layer. The α-Al.sub.2O.sub.3 layer contains a plurality of α-Al.sub.2O.sub.3 crystal grains and a plurality of κ-Al.sub.2O.sub.3 crystal grains, and has a TC(006) of more than 5 in a texture coefficient TC(hkl). A ratio of C.sub.κ to a sum of C.sub.α and C.sub.κ: [C.sub.κ/(C.sub.α+C.sub.κ)×100](%) is 0.05 to 7%, where C.sub.α is a total number of peak counts of the α-Al.sub.2O.sub.3 crystal grains obtained from measurement data of x-ray diffraction for the coating, and C.sub.κ is a total number of peak counts of the κ-Al.sub.2O.sub.3 crystal grains obtained from the measurement data of the x-ray diffraction for the coating.

A surface-coated cutting tool includes a base material and a coating formed on the base material. The coating includes an α-Al.sub.2O.sub.3 layer. The α-Al.sub.2O.sub.3 layer contains a plurality of α-Al.sub.2O.sub.3 crystal grains and a plurality of κ-Al.sub.2O.sub.3 crystal grains, and has a TC(006) of more than 5 in a texture coefficient TC(hkl). A ratio of C.sub.κ to a sum of C.sub.α and C.sub.κ: [C.sub.κ/(C.sub.α+C.sub.κ)×100](%) is 0.05 to 7%, where C.sub.α is a total number of peak counts of the α-Al.sub.2O.sub.3 crystal grains obtained from measurement data of x-ray diffraction for the coating, and C.sub.κ is a total number of peak counts of the κ-Al.sub.2O.sub.3 crystal grains obtained from the measurement data of the x-ray diffraction for the coating.

A sapphire ribbon of the present disclosure has a width, a thickness, and a length that are orthogonal to one another, a length direction is a growth direction, and the sapphire ribbon further has two main surfaces separate from each other in a thickness direction, and the width is at least 40 cm. Further, a monocrystalline ribbon manufacturing apparatus using EFG method according to the present disclosure includes a crucible having a width greater than a depth thereof, a die pair installed in the crucible and facing each other across a slit in the depth direction, a first heater and a second heater disposed around the crucible and facing each other in the depth direction, and a third heater and a fourth heater disposed around the crucible and facing each other in the width direction.

A sapphire ribbon of the present disclosure has a width, a thickness, and a length that are orthogonal to one another, a length direction is a growth direction, and the sapphire ribbon further has two main surfaces separate from each other in a thickness direction, and the width is at least 40 cm. Further, a monocrystalline ribbon manufacturing apparatus using EFG method according to the present disclosure includes a crucible having a width greater than a depth thereof, a die pair installed in the crucible and facing each other across a slit in the depth direction, a first heater and a second heater disposed around the crucible and facing each other in the depth direction, and a third heater and a fourth heater disposed around the crucible and facing each other in the width direction.