C30B29/22

Electronic apparatus
11587785 · 2023-02-21 · ·

An electronic apparatus is provided and includes a first substrate comprising a first conductive layer; a second substrate which is opposed to the first conductive layer and is separated from the first conductive layer, the second substrate including a second conductive layer, and a first hole penetrating the second substrate; and a connecting material which electrically connects the first conductive layer and the second conductive layer via the first hole, wherein the connecting material consists of a single material; and the second conductive layer is located on the second substrate on a side opposite to a side that is opposed to the first conductive layer.

PLATE-LIKE ALUMINA PARTICLE AND METHOD FOR MANUFACTURING PLATE-LIKE ALUMINA PARTICLE

A plate-like alumina particle containing a coloring component is provided. A plate-like alumina particle containing molybdenum, silicon, and a coloring component. A method for manufacturing the plate-like alumina particle, the method including the steps of mixing an aluminum compound containing an aluminum element, a molybdenum compound containing a molybdenum element, silicon or a silicon compound, and a coloring component so as to produce a mixture and calcining the resulting mixture.

PLATE-LIKE ALUMINA PARTICLE AND METHOD FOR MANUFACTURING PLATE-LIKE ALUMINA PARTICLE

A plate-like alumina particle containing a coloring component is provided. A plate-like alumina particle containing molybdenum, silicon, and a coloring component. A method for manufacturing the plate-like alumina particle, the method including the steps of mixing an aluminum compound containing an aluminum element, a molybdenum compound containing a molybdenum element, silicon or a silicon compound, and a coloring component so as to produce a mixture and calcining the resulting mixture.

COBALT-FREE SINGLE CRYSTAL COMPOSITE MATERIAL, AND PREPARATION METHOD THEREFOR AND USE THEREOF

A cobalt-free single crystal composite material, and a preparation method therefor and a use thereof. The cobalt-free single crystal material is of a core-shell structure, the core layer is the cobalt-free single crystal material, and the shell layer is prepared from TiNb.sub.2O.sub.7 and conductive lithium salt. The TiNb.sub.2O.sub.7 and the conductive lithium salt are selected as materials of the shell layer to coat the cobalt-free single crystal material, thereby improving the lithium ion conductivity of the cobalt-free single crystal material, and further improving the capacity and the first effect of the material.

COBALT-FREE SINGLE CRYSTAL COMPOSITE MATERIAL, AND PREPARATION METHOD THEREFOR AND USE THEREOF

A cobalt-free single crystal composite material, and a preparation method therefor and a use thereof. The cobalt-free single crystal material is of a core-shell structure, the core layer is the cobalt-free single crystal material, and the shell layer is prepared from TiNb.sub.2O.sub.7 and conductive lithium salt. The TiNb.sub.2O.sub.7 and the conductive lithium salt are selected as materials of the shell layer to coat the cobalt-free single crystal material, thereby improving the lithium ion conductivity of the cobalt-free single crystal material, and further improving the capacity and the first effect of the material.

Single crystalline RbUO.SUB.3 .and method of making and using same

The present invention relates to single crystalline RbUO.sub.3, hydrothermal growth processes of making such single crystals and methods of using such single crystals. In particular, Applicants disclose single crystalline RbUO.sub.3 single crystalline RbUO.sub.3 in the Pm-3m space group. Unlike other powdered RbUO.sub.3, Applicants' single crystalline RbUO.sub.3 has a sufficient crystal size to be characterized and used in the fields of neutron detection, radiation-hardened electronics, nuclear forensics, nuclear engineering photovoltaics, lasers, light-emitting diodes, photoelectrolysis and magnetic applications.

Single crystalline RbUO.SUB.3 .and method of making and using same

The present invention relates to single crystalline RbUO.sub.3, hydrothermal growth processes of making such single crystals and methods of using such single crystals. In particular, Applicants disclose single crystalline RbUO.sub.3 single crystalline RbUO.sub.3 in the Pm-3m space group. Unlike other powdered RbUO.sub.3, Applicants' single crystalline RbUO.sub.3 has a sufficient crystal size to be characterized and used in the fields of neutron detection, radiation-hardened electronics, nuclear forensics, nuclear engineering photovoltaics, lasers, light-emitting diodes, photoelectrolysis and magnetic applications.

CATHODE ACTIVE MATERIAL FOR LITHIUM SECONDARY BATTERY, METHOD OF PREPARING THE SAME, AND LITHIUM SECONDARY BATTERY INCLUDING CATHODE INCLUDING THE SAME

Provided are a cathode active material for a lithium secondary battery, a method of preparing the same, and a lithium secondary battery containing a cathode including the cathode active material, in which the cathode active material includes nickel-based lithium metal oxide containing single-crystal particles, and a particle size of the single-crystal particles is about 1 μm to about 8 μm, and a particle size distribution of the single-crystal particles expressed by (D90-D10)/D50 is 1.4 or less.

CATHODE ACTIVE MATERIAL FOR LITHIUM SECONDARY BATTERY, METHOD OF PREPARING THE SAME, AND LITHIUM SECONDARY BATTERY INCLUDING CATHODE INCLUDING THE SAME

Provided are a cathode active material for a lithium secondary battery, a method of preparing the same, and a lithium secondary battery containing a cathode including the cathode active material, in which the cathode active material includes nickel-based lithium metal oxide containing single-crystal particles, and a particle size of the single-crystal particles is about 1 μm to about 8 μm, and a particle size distribution of the single-crystal particles expressed by (D90-D10)/D50 is 1.4 or less.

Method for manufacturing a monocrystalline piezoelectric layer
11600766 · 2023-03-07 · ·

A method for manufacturing a monocrystalline piezoelectric material layer includes providing a donor substrate made of the piezoelectric material, providing a receiving substrate, transferring a so-called “seed layer” of the donor substrate onto the receiving substrate, and using epitaxy of the piezoelectric material on the seed layer until the desired thickness for the monocrystalline piezoelectric layer is obtained.