A method of performing heteroepitaxy comprises exposing a substrate to a carrier gas, a first precursor gas, a Group II/III element, and a second precursor gas, to form a heteroepitaxial growth of one of GaAs, AlAs, InAs, GaP, InP, ZnSe, GaSe, CdSe, InSe, ZnTe, CdTe, GaTe, HgTe, GaSb, InSb, AlSb, CdS, GaN, and AlN on the substrate; wherein the substrate comprises one of GaAs, AlAs, InAs, GaP, InP, ZnSe, GaSe, CdSe, InSe, ZnTe, CdTe, GaTe, HgTe, GaSb, InSb, AlSb, CdS, GaN, and AlN; wherein the carrier gas is Hz, wherein the first precursor is HCl, the Group II/III element comprises at least one of Zn, Cd, Hg, Al, Ga, and In; and wherein the second precursor is one of AsH.sub.3 (arsine), PH.sub.3 (phosphine), H.sub.2Se (hydrogen selenide), H.sub.2Te (hydrogen telluride), SbH.sub.3 (hydrogen antimonide), H.sub.2S (hydrogen sulfide), and NH.sub.3 (ammonia). The process may be an HVPE (hydride vapor phase epitaxy) process.

The present invention is related to a method of providing n-doped group III-V materials grown on (111) Si, and especially to a method comprising steps of growth of group III-V materials interleaved with steps of no growth, wherein both growth steps and no growth steps are subject to a constant uninterrupted arsenic flux concentration.

An InP substrate, being a group III-V compound semiconductor substrate, that includes, on a main surface thereof, 0.22 particles/cm.sup.2 that have a particle diameter of at least 0.19 μm or 20 particles/cm.sup.2 that have a particle diameter of 0.079 μm. An InP substrate with an epitaxial layer, being a group III-V compound semiconductor substrate with an epitaxial layer, includes: the InP substrate and an epitaxial layer arranged upon the main surface of the InP substrate; and, upon the main surface thereof when the thickness of the epitaxial layer is 0.3 μm, no more than 10 LPD that have a circle-equivalent diameter of at least 0.24 μm, per cm.sup.2, or no more than 30 LPD that have a circle-equivalent diameter of at least 0.136 μm, per cm.sup.2. As a result, a group III-V compound semiconductor substrate capable of reducing defects in an epitaxial layer grown upon a main surface thereof and a group III-V compound semiconductor substrate with an epitaxial layer are provided.

Aspects of the disclosure relate to processes for epitaxial growth of Group III/V materials at high rates, such as about 30 μm/hr or greater, for example, about 40 μm/hr, about 50 μm/hr, about 55 μm/hr, about 60 μm/hr, about 70 μm/hr, about 80 μm/hr, and about 90-120 μm/hr deposition rates. The Group III/V materials or films may be utilized in solar, semiconductor, or other electronic device applications. The Group III/V materials may be formed or grown on a sacrificial layer disposed on or over the support substrate during a vapor deposition process. Subsequently, the Group III/V materials may be removed from the support substrate during an epitaxial lift off (ELO) process. The Group III/V materials are thin films of epitaxially grown layers containing gallium arsenide, gallium aluminum arsenide, gallium indium arsenide, gallium indium arsenide nitride, gallium aluminum indium phosphide, phosphides thereof, nitrides thereof, derivatives thereof, alloys thereof, or combinations thereof.

Aspects of the disclosure relate to processes for epitaxial growth of Group III/V materials at high rates, such as about 30 μm/hr or greater, for example, about 40 μm/hr, about 50 μm/hr, about 55 μm/hr, about 60 μm/hr, about 70 μm/hr, about 80 μm/hr, and about 90-120 μm/hr deposition rates. The Group III/V materials or films may be utilized in solar, semiconductor, or other electronic device applications. The Group III/V materials may be formed or grown on a sacrificial layer disposed on or over the support substrate during a vapor deposition process. Subsequently, the Group III/V materials may be removed from the support substrate during an epitaxial lift off (ELO) process. The Group III/V materials are thin films of epitaxially grown layers containing gallium arsenide, gallium aluminum arsenide, gallium indium arsenide, gallium indium arsenide nitride, gallium aluminum indium phosphide, phosphides thereof, nitrides thereof, derivatives thereof, alloys thereof, or combinations thereof.

A gallium arsenide crystal substrate has a diameter not smaller than 150 mm and not greater than 205 mm and a thickness not smaller than 300 μm and not greater than 800 μm and includes any of a flat portion and a notch portion. In any of a first flat region and a first notch region, when an atomic concentration of silicon is not lower than 3.0×10.sup.16 cm.sup.−3 and not higher than 3.0×10.sup.19 cm.sup.−3, the gallium arsenide crystal substrate has an average dislocation density not lower than 0 cm.sup.−2 and not higher than 15000 cm.sup.−2, and when an atomic concentration of carbon is not lower than 1.0×10.sup.15 cm.sup.−3 and not higher than 5.0×10.sup.17 cm.sup.−3, the gallium arsenide crystal substrate has an average dislocation density not lower than 3000 cm.sup.−2 and not higher than 20000 cm.sup.−2.

A gallium arsenide crystal substrate has a diameter not smaller than 150 mm and not greater than 205 mm and a thickness not smaller than 300 μm and not greater than 800 μm and includes any of a flat portion and a notch portion. In any of a first flat region and a first notch region, when an atomic concentration of silicon is not lower than 3.0×10.sup.16 cm.sup.−3 and not higher than 3.0×10.sup.19 cm.sup.−3, the gallium arsenide crystal substrate has an average dislocation density not lower than 0 cm.sup.−2 and not higher than 15000 cm.sup.−2, and when an atomic concentration of carbon is not lower than 1.0×10.sup.15 cm.sup.−3 and not higher than 5.0×10.sup.17 cm.sup.−3, the gallium arsenide crystal substrate has an average dislocation density not lower than 3000 cm.sup.−2 and not higher than 20000 cm.sup.−2.

The presently disclosed subject matter relates generally to GaAs.sub.1−xSb.sub.x nanowires (NW) grown on a graphitic substrate, to methods of growing such nanowires, and to use of such nanowires in applications such as flexible near infrared photodetector.

The presently disclosed subject matter relates generally to GaAs.sub.1−xSb.sub.x nanowires (NW) grown on a graphitic substrate, to methods of growing such nanowires, and to use of such nanowires in applications such as flexible near infrared photodetector.

A method of performing heteroepitaxy comprises exposing a substrate to a carrier gas, a first precursor gas, a Group II/III element, and a second precursor gas, to form a heteroepitaxial growth of one of GaAs, AlAs, InAs, GaP, InP, ZnSe, GaSe, CdSe, InSe, ZnTe, CdTe, GaTe, HgTe, GaSb, InSb, AlSb, CdS, GaN, and AlN on the substrate; wherein the substrate comprises one of GaAs, AlAs, InAs, GaP, InP, ZnSe, GaSe, CdSe, InSe, ZnTe, CdTe, GaTe, HgTe, GaSb, InSb, AlSb, CdS, GaN, and AlN; wherein the carrier gas is H.sub.2, wherein the first precursor is HCl, the Group II/III element comprises at least one of Zn, Cd, Hg, Al, Ga, and In; and wherein the second precursor is one of AsH.sub.3 (arsine), PH.sub.3 (phosphine), H.sub.2Se (hydrogen selenide), H.sub.2Te (hydrogen telluride), SbH.sub.3 (hydrogen antimonide), H.sub.2S (hydrogen sulfide), and NH.sub.3 (ammonia). The process may be an HVPE (hydride vapor phase epitaxy) process.